Abstract: Provided is a seed crystal fixing device 1 for fixing a seed crystal 9 to a seed crystal placing part 3 of a reaction vessel with an adhesive interposed in between. The seed crystal fixing device 1 includes: a chamber 10 capable of installing the seed crystal placing part 3 in the inside thereof; and a flexible pouched body 16 placed on an upper surface of the chamber 10. The flexible pouched body 16 is inflated with a delivery of gas and is deflated with an exhaust of the gas. The flexible pouched body 16 is configured to come into contact with a surface of the seed crystal 9 when inflated, and thereby applies pressure uniformly across the entire surface of the seed crystal 9. The upper surface of the chamber 10 forms convex shape towards the seed crystal placing part 3, and thereby uniform press-bonding of the seed crystal 9 to the seed crystal placing part 3 is accomplished.

Abstract: Provided is a seed crystal fixing device 1 for fixing a seed crystal 9 to a seed crystal placing part 3 of a reaction vessel with an adhesive interposed in between. The seed crystal fixing device 1 includes: a chamber 10 capable of installing the seed crystal placing part 3 in the inside thereof; and a flexible pouched body 16 placed on an upper surface of the chamber 10. The flexible pouched body 16 is inflated with a delivery of gas and is deflated with an exhaust of the gas. The flexible pouched body 16 is configured to come into contact with a surface of the seed crystal 9 when inflated, and thereby applies pressure uniformly across the entire surface of the seed crystal 9. The upper surface of the chamber 10 forms convex shape towards the seed crystal placing part 3, and thereby uniform press-bonding of the seed crystal 9 to the seed crystal placing part 3 is accomplished.

Abstract: A method of producing a silicon carbide single crystal, having: fixing a seed crystal, including setting a seed crystal on a seed crystal fixing part with interposition of an adhesive; applying a uniform pressure on the entire surface of the seed crystal by contacting a flexible bag which is inflatable and deflatable to the seed crystal by charging a gas into the to flexible bag; hardening the adhesive; and sublimating a silicon carbide powder obtained by calcinating a mixture containing at least a silicon source and a resol xylene resin, having a nitrogen content of 100 mass ppm or less and having a content of each impurity elements of 0.1 mass ppm or less, and re-crystallizing for growing a silicon carbide single crystal.

Abstract: A seed crystal fixing apparatus for fixing the seed crystal on the seed crystal setting part of a reaction vessel with interposition of the adhesive, has a chamber configured to place the seed crystal setting part and form a hermetic atmosphere within the chamber; and a pressure part placed within the chamber for uniformly applying a pressure on the entire surface of the seed crystal.

Abstract: A method of producing a silicon carbide single crystal has storing a sublimation law material on a first end portion in a reaction container; disposing a seed crystal of a silicon carbide single crystal on a second end portion substantially facing the sublimation law material in the reaction container; and re-crystallizing the sublimated sublimation law material on the seed crystal to grow a silicon carbide single crystal, wherein a sealing portion is provided in the reaction container to grow a silicon carbide single crystal on the seed crystal provided in the sealing portion while preventing the leak of the sublimated sublimation law material from the atmosphere for sublimation.

Abstract: A seed crystal fixing apparatus for fixing the seed crystal on the seed crystal setting part of a reaction vessel with interposition of the adhesive, has a chamber configured to place the seed crystal setting part and form a hermetic atmosphere within the chamber; and a pressure part placed within the chamber for uniformly applying a pressure on the entire surface of the seed crystal.

Abstract: A method of producing a silicon carbide single crystal has storing a sublimation law material on a first end portion in a reaction container; disposing a seed crystal of a silicon carbide single crystal on a second end portion substantially facing the sublimation law material in the reaction container; and re-crystallizing the sublimated sublimation law material on the seed crystal to grow a silicon carbide single crystal, wherein a sealing portion is provided in the reaction container to grow a silicon carbide single crystal on the seed crystal provided in the sealing portion while preventing the leak of the sublimated sublimation law material from the atmosphere for sublimation.

Abstract: A method of producing a silicon carbide single crystal, having: fixing a seed crystal, including setting a seed crystal on a seed crystal fixing part with interposition of an adhesive; applying a uniform pressure on the entire surface of the seed crystal by contacting a flexible bag which is inflatable and deflatable to the seed crystal by charging a gas into the to flexible bag; hardening the adhesive; and sublimating a silicon carbide powder obtained by calcinating a mixture containing at least a silicon source and a resol xylene resin, having a nitrogen content of 100 mass ppm or less and having a content of each impurity elements of 0.1 mass ppm or less, and re-crystallizing for growing a silicon carbide single crystal.