Abstract: An oxide superconductor member is composed of a tape-shaped substrate, an intermediate layer formed on this substrate and an oxide superconductor thin film layer formed on this intermediate layer. A surface of the tape-shaped substrate is polished by continuously running the tape-shaped substrate. The polishing step includes initial polishing process and finishing process which are carried out such that the average surface roughness Ra of the substrate becomes 2 nanometers or less and the in-plane directionality of the intermediate layer becomes 5° or less after the polishing step.

Abstract: An oxide superconductor member is composed of a tape-shaped substrate, an intermediate layer formed on this substrate and an oxide superconductor thin film layer formed on this intermediate layer. A surface of the tape-shaped substrate is polished by continuously running the tape-shaped substrate. The polishing step includes initial polishing process and finishing process which are carried out such that the average surface roughness Ra of the substrate becomes 2 nanometers or less and the in-plane directionality of the intermediate layer becomes 5° or less after the polishing step.

Abstract: A polishing system and a method are presented for uniformly polishing efficiently at a fast rate the surface of a tape-like metallic base material of several hundred meters in length. The polishing system is provided not only with devices for causing the base material to travel continuously and applying a specified tension in the base material but also with a first polishing device for randomly polishing the target surface and a second polishing device for carrying out a final polishing on the target surface in the direction of travel of the base material. Polishing marks are formed in the direction of travel on the target surface by the final polishing.

Abstract: A surface polishing method for enhancing crystal orientation on the surface of a tapelike metal substrate in order to enhance the critical current of a superconducting thin film. In an oxide superconductor comprising a tapelike substrate, an intermediate layer formed on the tapelike substrate, and an oxide superconducting thin film layer formed on the intermediate layer, the method for polishing a surface to be polished of the tapelike substrate comprises a step for polishing the surface to be polished while traveling the tapelike substrate continuously, wherein an initial polishing step and a finish polishing step are included. Ultimately, the average surface roughness Ra of the polished surface is 2 nanometer or less and the in-plane orientation ?? is 5° or less.

Abstract: An oxide superconductor member is composed of a tape-shaped substrate, an intermediate layer formed on this substrate and an oxide superconductor thin film layer formed on this intermediate layer. A surface of the tape-shaped substrate is polished by continuously running the tape-shaped substrate. The polishing step includes initial polishing process and finishing process which are carried out such that the average surface roughness Ra of the substrate becomes 2 nanometers or less and the in-plane directionality of the intermediate layer becomes 5° or less after the polishing step.

Abstract: A polishing system and a method are presented for uniformly polishing efficiently at a fast rate the surface of a tape-like metallic base material of several hundred meters in length. The polishing system is provided not only with devices for causing the base material to travel continuously and applying a specified tension in the base material but also with a first polishing device for randomly polishing the target surface and a second polishing device for carrying out a final polishing on the target surface in the direction of travel of the base material. Polishing marks are formed in the direction of travel on the target surface by the final polishing.

Abstract: A polishing pad includes a main body having a polishing surface and a backing that is affixed to the back surface of the main body. The elasticity of the main body is within the range of 600 psi-16000 psi and preferably within the range of 1600 psi-16000 psi when a compressive pressure of 2 psi-16 psi is applied, and the thickness of the main body is within the range of 0.5 mm-3.0 mm. The elasticity of the backing is lower than that of the main body and exceeds 300 psi when a compressive pressure of 2 psi-16 psi is applied.

Abstract: A polishing pad has a resin sheet having a flat surface and abrading particles fixed inside and on the surface of this resin sheet. Its tensile strength is in the range of 30 MPa or greater and 70 MPa or less and preferably in the range of 40 MPa or greater and 60 MPa or less. Its tensile tear elongation is in the range of 50% or less, preferably 20% or less and more preferably 5% or less. The average diameter of the primary particles of the abrading particles is in the range of 0.005 ?m or greater and less than 0.5 ?m, and preferably in the range of 0.005 ?m or greater and 0.2 ?m or less. The content of the abrading particles fixed to the resin sheet is 10 volume % or greater and 50 volume % or less, or preferably 10 volume % or greater and 24 volume or less.

Abstract: A transparent pad having a polishing surface with an average surface roughness of 5 ?m or less is used as a polishing pad. An indentation is formed on the back surface of the transparent pad such that its rate of light transmission is locally changed. The transparent pad has a rate of light transmission equal to or greater than 10% or preferably 30% for light of at least one wavelength in the range of 350 nm–900 nm.

Abstract: A polishing pad has a resin sheet having a flat surface and abrading particles fixed inside and on the surface of this resin sheet. Its tensile strength is in the range of 30MPa or greater and 70 MPa or less and preferably in the range of 40MPa or greater and 60MPa or less. Its tensile tear elongation is in the range of 50% or less, preferably 20% or less and more preferably 5% or less. The average diameter of the primary particles of the abrading particles is in the range of 0.005 ?m or greater and less than 0.5 ?m, and preferably in the range of 0.005 ?m or greater and 0.2 ?m or less. The content of the abrading particles fixed to the resin sheet is 10 volume % or greater and 50 volume % or less, or preferably 10 volume % or greater and 24 volume or less.

Abstract: A polishing pad for planarizing the surface of a wafer has a planar main body of a non-foamed synthetic resin, having Shore D hardness of 66.0-78.5, preferably 70.0-78.5, or more preferably 70.0-78.0, compressibility of 4% or less or preferably 2% or less, and compression recovery rate of 50% or greater or preferably 70% or greater.

Abstract: A cutting tool for simultaneously carrying out a facing operation and a grooving operation on a target surface has a facing part and a grooving part that protrudes from and may be integrally formed with the facing part. The facing part has a facing surface for carrying out the facing operation and the grooving part has a grooving surface and is for cutting a groove of a specified depth and width on the target surface simultaneously as the cutting tool is moved in a specified forward direction parallel to the target surface. The dimensions of the facing and grooving parts, the roughness of their surfaces, the angles of their cutting edges and the sloping angles of the facing and grooving surfaces with respect to the forward direction are each required to be within a specified range. Where the grooving part protrudes from the facing part, the corners at which the facing surface joins the side surfaces of the grooving part are formed such that each corner has a beveled surface portion.

Abstract: A cutting tool for simultaneously carrying out a facing operation and a grooving operation on a target surface has a facing part and a grooving part that protrudes from and may be integrally formed with the facing part. The facing part has a facing surface for carrying out the facing operation and the grooving part has a grooving surface and is for cutting a groove of a specified depth and width on the target surface simultaneously as the cutting tool is moved in a specified forward direction parallel to the target surface. The dimensions of the facing and grooving parts, the roughness of their surfaces, the angles of their cutting edges and the sloping angles of the facing and grooving surfaces with respect to the forward direction are each required to be within a specified range. Where the grooving part protrudes from the facing part, the corners at which the facing surface joins the side surfaces of the grooving part are formed such that each corner has a beveled surface portion.

Abstract: A transparent pad having a polishing surface with an average surface roughness of 5 ?m or less is used as a polishing pad. An indentation is formed on the back surface of the transparent pad such that its rate of light transmission is locally changed. The transparent pad has a rate of light transmission equal to or greater than 10% or preferably 30% for light of at least one wavelength in the range of 350 nm-900 nm.

Abstract: A polishing pad is formed with a non-foamed member shaped as a plate having a flat surface and abrading particles affixed inside and on the surfaces of this non-foamed member. Its average surface roughness is in the range of 0.5 ?m-10 ?m, and its Shore D hardness is within the range of 50-85. Grooves are formed on the surface of the polishing pad for collecting debris generated during the polishing operation and serving also as flow routes of a polishing liquid for distributing it uniformly over the surface of the polishing pad.

Abstract: A polishing table 11 in the CMP apparatus 10 has a diameter smaller than the diameter of a polishing pad 12. The polishing pad 12 is disposed on the polishing table so as to cover the entire top surface of the polishing table 11. A space 13 is formed between outside of the outer peripheral surface of the polishing table 11 and under the outer peripheral bottom surface portion of the polishing pad 12 projecting outside from the edge of the polishing table 11. A trough 14 with an opening 14a on top thereof as a device for withdrawing the used slurry is disposed around the outer peripheral surface of the polishing table 11 so as to be located a part thereof in the space 13.

Abstract: A polishing table 11 in the CMP apparatus 10 has a diameter smaller than the diameter of a polishing pad 12. The polishing pad 12 is disposed on the polishing table so as to cover the entire top surface of the polishing table 11. A space 13 is formed between outside of the outer peripheral surface of the polishing table 11 and under the outer peripheral bottom surface portion of the polishing pad 12 projecting outside from the edge of the polishing table 11. A trough 14 with an opening 14a on top thereof as a device for withdrawing the used slurry is disposed around the outer peripheral surface of the polishing table 11 so as to be located a part thereof in the space 13.