Abstract: A light emitting device includes a base structure and a light emitting element. The light emitting element includes a first electrode and a second electrode. The first electrode includes a first electrode surface. The second electrode is separately provided from the first electrode. The second electrode includes a second electrode surface. The second electrode surface is spaced apart from the first electrode surface in a second direction different from a first direction. The second electrode surface includes a first part and a second part. The first part extends in a third direction different from each of the first direction and the second direction. The second part extends from the first part in the second direction. At least part of the second part has a curved profile extending from the first part when viewed in the first direction.

Abstract: A light emitting device includes a light emitting element having electrodes on a lower surface side thereof; a phosphor layer covering a surface of the light emitting element; a transparent covering member disposed on at least one side surface of the light emitting device; and a reflection member that covers the covering member.

Abstract: A light emitting device includes a base structure and a light emitting element. The light emitting element includes a first electrode and a second electrode. The first electrode includes a first electrode surface. The second electrode is separately provided from the first electrode. The second electrode includes a second electrode surface. The second electrode surface is spaced apart from the first electrode surface in a second direction different from a first direction. The second electrode surface includes a first part and a second part. The first part extends in a third direction different from each of the first direction and the second direction. The second part extends from the first part in the second direction. At least part of the second part has a curved profile extending from the first part when viewed in the first direction.

Abstract: In a semiconductor device including a semiconductor element and a wiring substrate on which the semiconductor element is mounted. The wiring substrate includes an insulating substrate and conductive wiring formed in the insulating substrate and electrically connected to the semiconductor element. The conductive wiring includes an underlying layer formed on the insulating substrate, a main conductive layer formed on the underlying layer, and an electrode layer covering side surfaces of the underlying layer and side surfaces and an upper surface of the main conductive layer. The underlying layer includes an adhesion layer being formed in contact with the insulating substrate and containing an alloy of Ti.

Abstract: A light emitting device includes a light emitting element having electrodes on a lower surface side thereof; a phosphor layer covering a surface of the light emitting element; a transparent covering member disposed on at least one side surface of the light emitting device; and a reflection member that covers the covering member.

Abstract: In a semiconductor device including a semiconductor element and a wiring substrate on which the semiconductor element is mounted. The wiring substrate includes an insulating substrate and conductive wiring formed in the insulating substrate and electrically connected to the semiconductor element. The conductive wiring includes an underlying layer formed on the insulating substrate, a main conductive layer formed on the underlying layer, and an electrode layer covering side surfaces of the underlying layer and side surfaces and an upper surface of the main conductive layer. The underlying layer includes an adhesion layer being formed in contact with the insulating substrate and containing an alloy of Ti.

Abstract: A light emitting device includes a substrate having a conductive portion; a light emitting element having one or more electrodes on a lower surface side thereof, the electrodes being positioned on the conductive portion of the substrate; a phosphor layer disposed on a surface of the light emitting element and on a peripheral surface area of the conductive portion next to the light emitting element; and a reflection layer covering a part of the phosphor layer disposed on the peripheral surface area of the conductive portion.

Abstract: In a semiconductor device including a semiconductor element and a wiring substrate on which the semiconductor element is mounted. The wiring substrate includes an insulating substrate and conductive wiring formed in the insulating substrate and electrically connected to the semiconductor element. The conductive wiring includes an underlying layer formed on the insulating substrate, a main conductive layer formed on the underlying layer, and an electrode layer covering side surfaces of the underlying layer and side surfaces and an upper surface of the main conductive layer. The underlying layer includes an adhesion layer being formed in contact with the insulating substrate and containing an alloy of Ti.

Abstract: A semiconductor light emitting device, has a package constituted by the lamination of a first insulating layer having a pair of positive and negative conductive wires formed on its upper face, an inner-layer wire below the first insulating layer, and a second insulating layer below the inner-layer wire; a semiconductor light emitting element that has a pair of positive and negative electrodes on the same face side and that is disposed with these electrodes opposite the conductive wires; and a sealing member that covers the semiconductor light emitting element, wherein part of the conductive wires is formed extending in the outer edge direction of the sealing member from directly beneath the semiconductor light emitting element, on the upper face of the first insulating layer, and is connected to the inner-layer wire via a conductive wire disposed in the thickness direction of the package, and the inner-layer wire is disposed so as to be spaced apart from the outer periphery of the semiconductor light emitting

Abstract: In a semiconductor device including a semiconductor element and a wiring substrate on which the semiconductor element is mounted. The wiring substrate includes an insulating substrate and conductive wiring formed in the insulating substrate and electrically connected to the semiconductor element. The conductive wiring includes an underlying layer formed on the insulating substrate, a main conductive layer formed on the underlying layer, and an electrode layer covering side surfaces of the underlying layer and side surfaces and an upper surface of the main conductive layer. The underlying layer includes an adhesion layer being formed in contact with the insulating substrate and containing an alloy of Ti.

Abstract: A light emitting device includes a substrate having a conductive portion; a light emitting element having one or more electrodes on a lower surface side thereof, the electrodes being positioned on the conductive portion of the substrate; a phosphor layer disposed on a surface of the light emitting element and on a peripheral surface area of the conductive portion next to the light emitting element; and a reflection layer covering a part of the phosphor layer disposed on the peripheral surface area of the conductive portion.

Abstract: A semiconductor light emitting device, has a package constituted by the lamination of a first insulating layer having a pair of positive and negative conductive wires formed on its upper face, an inner-layer wire below the first insulating layer, and a second insulating layer below the inner-layer wire; a semiconductor light emitting element that has a pair of positive and negative electrodes on the same face side and that is disposed with these electrodes opposite the conductive wires; and a sealing member that covers the semiconductor light emitting element, wherein part of the conductive wires is formed extending in the outer edge direction of the sealing member from directly beneath the semiconductor light emitting element, on the upper face of the first insulating layer, and is connected to the inner-layer wire via a conductive wire disposed in the thickness direction of the package, and the inner-layer wire is disposed so as to be spaced apart from the outer periphery of the semiconductor light emitting

Abstract: The light emitting device 100 includes a light emitting element 101, a package for arranging the light emitting element 101, and an electrically conductive wire 106 for connecting an electrode disposed on the package and an electrode of the light emitting element. The package includes a support member 108 having a mounting portion to arrange the light emitting element 101 and defining a recess 103 to house a semiconductor element 102 which is different than the light emitting element, and a light transmissive member 107 covering at least the light emitting element 101. The package defines a hollow portion 111 between the light transmissive member 107 covering the opening of the recess 103 and an inner wall defining the recess 103.

Abstract: The light emitting device 100 includes a light emitting element 101, a package for arranging the light emitting element 101, and an electrically conductive wire 106 for connecting an electrode disposed on the package and an electrode of the light emitting element. The package includes a support member 108 having a mounting portion to arrange the light emitting element 101 and defining a recess 103 to house a semiconductor element 102 which is different than the light emitting element, and a light transmissive member 107 covering at least the light emitting element 101. The package defines a hollow portion 111 between the light transmissive member 107 covering the opening of the recess 103 and an inner wall defining the recess 103.

Abstract: In a semiconductor device including a semiconductor element and a wiring substrate on which the semiconductor element is mounted. The wiring substrate includes an insulating substrate and conductive wiring formed in the insulating substrate and electrically connected to the semiconductor element. The conductive wiring includes an underlying layer formed on the insulating substrate, a main conductive layer formed on the underlying layer, and an electrode layer covering side surfaces of the underlying layer and side surfaces and an upper surface of the main conductive layer. The underlying layer includes an adhesion layer being formed in contact with the insulating substrate and containing an alloy of Ti.