Abstract: A power converter includes a stack of a plurality of semiconductor modules, each of which incorporates semiconductor elements, and a plurality of cooling conduits, though each of which a coolant flows to cool the semiconductor modules, at least one electronic component electrically connected to the semiconductor modules, and a cooling plate for cooling the at least one electronic component. The stack, the at least one electronic component, and the cooling plate are arranged in a stacking direction of the stack. The cooling plate is connected to the cooling conduits and has an intra-plate pathway formed therein thorough which the coolant flows in a direction perpendicular to the stacking direction. The cooling plate has a larger area than each cooling conduit when viewed from the stacking direction.

Abstract: In a semiconductor device, an epitaxial substrate includes a SiC (silicon carbide) substrate and a GaN (gallium nitride) epitaxial layer formed on the SiC substrate. A multi-layer wiring structure is formed on the front-face side of the epitaxial substrate, and includes at least one metal wiring layer and an organic interlayer dielectric. A back-face metal layer is formed on the back face of the epitaxial substrate. At least one via hole is formed in the epitaxial substrate, and is configured to provide a connection between the multi-layer wiring structure and the back-face metal layer.

Abstract: A power converter includes a stack of a plurality of semiconductor modules, each of which incorporates semiconductor elements, and a plurality of cooling conduits, though each of which a coolant flows to cool the semiconductor modules, at least one electronic component electrically connected to the semiconductor modules, and a cooling plate for cooling the at least one electronic component. The stack, the at least one electronic component, and the cooling plate are arranged in a stacking direction of the stack. The cooling plate is connected to the cooling conduits and has an intra-plate pathway formed therein thorough which the coolant flows in a direction perpendicular to the stacking direction. The cooling plate has a larger area than each cooling conduit when viewed from the stacking direction.

Abstract: There is provided a manufacturing method of a semiconductor apparatus, including forming an InGaP layer on a substrate, forming a gate electrode having a Ti layer and an Au layer by vapor deposition on an upper surface of the InGaP layer, further forming a GaAs layer on the upper surface of the InGaP layer in a region different from a region in which the gate electrode is formed, and further forming a source electrode and a drain electrode on an upper surface of the GaAs layer. When the gate electrode having the Ti and Au layers is formed on the upper surface of the InGaP layer, the Ti and Au layers are formed with a substrate temperature being set equal to or lower than 180° C.