Patents by Inventor Takuya Ono

Takuya Ono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Oxide magnetic material and chip part
    Publication number: 20030122288
    Abstract: An oxide magnetic material comprising main constituents including Fe2O3, ZnO, CuO and NiO. Y2O3 of 0.003 to 0.021 wt % and-ZrO2 of 0.06 to 0.37 wt % are included in said main constituents with respect to all amounts. It is also preferable that Si of 0.010 to 0.0112 wt % is included in said main constituents with respect to all amounts. Further, it is also preferable that Y2O3of 0.001 to 0.011 wt % , ZrO2 of 0.031 to 0.194 wt %, and Si of 0.010 to 0.056 wt % are included in said main constituents with respect to all amounts.
    Type: Application
    Filed: September 11, 2002
    Publication date: July 3, 2003
    Applicant: TDK CORPORATION
    Inventors: Ko Ito, Yukio Takahashi, Takuya Ono, Hiroshi Harada
  • Oxide magnetic materials, chip components using the same, and method for producing oxide magnetic materials and chip components
    Patent number: 6558566
    Abstract: Ni—Cu—Zn based oxide magnetic materials, in that not only the internal conductor is stabilized at very low firing temperatures, but also the characteristics in the high frequency zones of 100 MHz or higher are excellent. The oxide magnetic materials comprises, Fe2O3: 35.0 to 51.0 mol %, CuO: 1.0 to 35 mol %, NiO: 38.0 to 64.0 mol %, ZnO: 0 to 10.0 mol % (including 0%) and Ca: 0.3 wt % or lower (not including 0%), and, optionally, CoO: 0.7 wt % or lower.
    Type: Grant
    Filed: March 12, 2001
    Date of Patent: May 6, 2003
    Assignee: TDK Corporation
    Inventors: Takuya Ono, Ko Ito
  • Oxide magnetic material and chip part
    Patent number: 6485840
    Abstract: An oxide magnetic material comprising main constituents including Fe2O3, ZnO, CuO and NiO. Y2O3 of 0.003 to 0.021 wt % and ZrO2 of 0.06 to 0.37 wt % are included in said main constituents with respect to all amounts. It is also preferable that Si of 0.010 to 0.0112 wt % is included in said main constituents with respect to all amounts. Further, it is also preferable that Y2O3 of 0.001 to 0.011 wt %, ZrO2 of 0.031 to 0.194 wt %, and Si of 0.010 to 0.056 wt % are included in said main constituents with respect to all amounts.
    Type: Grant
    Filed: August 18, 2000
    Date of Patent: November 26, 2002
    Assignee: TDK Corporation
    Inventors: Ko Ito, Yukio Takahashi, Takuya Ono, Hiroshi Harada
  • Oxide magnetic materials, chip components using the same, and method for producing oxide magnetic materials and chip components
    Publication number: 20010028051
    Abstract: Ni—Cu—Zn based oxide magnetic materials, in that not only the internal conductor is stabilized at very low firing temperatures, but also the characteristics in the high frequency zones of 100 MHz or higher are excellent. The oxide magnetic materials composing, Fe2O3: 35.0 to 51.0 mol %, CuO: 1.0 to 35 mol %, NiO: 38.0 to 64.0 mol %, and ZnO: 0 to 10.0 mol % (including 0%).
    Type: Application
    Filed: March 12, 2001
    Publication date: October 11, 2001
    Applicant: TDK CORPORATION
    Inventors: Takuya Ono, Ko Ito