Abstract: A detection circuit is provided to output a feedback signal and a adjustment current when a voltage of a high-voltage side main terminal of a semiconductor switching device is equal to or higher than a preset threshold value in a period in which a gate drive circuit turns off the semiconductor switching device to cut off a current, a control circuit diagnoses a state of the semiconductor switching device or controls a signal to be outputted to the gate drive circuit, on the basis of the feedback signal, and a gate current, which is an output of the gate drive circuit, is adjusted by the adjustment current.

Abstract: Provided is a power semiconductor element gate driving circuit that performs ON/OFF control on main current of a power semiconductor element having a gate electrode by charging the gate electrode of the power semiconductor element with electric charges and discharging the electric charges on the basis of an inputted gate signal. When the gate signal is switched to an OFF signal, control is performed such that gate current for discharging the electric charges from the gate electrode increases in association with increase in a temperature of the power semiconductor element and decreases in association with increase in the main current.

Abstract: A detection circuit is provided to output a feedback signal and a adjustment current when a voltage of a high-voltage side main terminal of a semiconductor switching device is equal to or higher than a preset threshold value in a period in which a gate drive circuit turns off the semiconductor switching device to cut off a current, a control circuit diagnoses a state of the semiconductor switching device or controls a signal to be outputted to the gate drive circuit, on the basis of the feedback signal, and a gate current, which is an output of the gate drive circuit, is adjusted by the adjustment current.

Abstract: A drive circuit of a power semiconductor element comprises a gate drive voltage generator to generate, based on an ON/OFF drive timing signal input to an input terminal, a gate drive voltage to be applied to a gate electrode of a switching element having the gate electrode for controlling a main current that flows between a first main electrode and a second main electrode, wherein the gate drive voltage generator includes a gate current limiting circuit in which a current limiter to limit a current and a voltage limiter to limit the magnitude of a voltage applied to both ends of the current limiter are connected in parallel.

Abstract: Provided is a power semiconductor element gate driving circuit that performs ON/OFF control on main current of a power semiconductor element having a gate electrode by charging the gate electrode of the power semiconductor element with electric charges and discharging the electric charges on the basis of an inputted gate signal. When the gate signal is switched to an OFF signal, control is performed such that gate current for discharging the electric charges from the gate electrode increases in association with increase in a temperature of the power semiconductor element and decreases in association with increase in the main current.

Abstract: A drive adjustment circuit for a power semiconductor element includes a differentiating circuit to differentiate a gate voltage of a power semiconductor element, a power supply to generate a comparison reference voltage, a comparator having a first input terminal connected to the differentiating circuit and a second input terminal receiving the comparison reference voltage, and a voltage adjusting circuit to adjust a gate voltage of the power semiconductor element based on an output of the comparator.

Abstract: A power semiconductor device protection circuit includes: a drive circuit that drives a power semiconductor device; a current detector which includes a first resistor and an inductor connected in parallel; and a detection circuit that detects a short-circuit condition of the power semiconductor device. One end of the first resistor and one end of the inductor are connected to one terminal of the power semiconductor device. The detection circuit detects the short-circuit condition of the power semiconductor device by comparing a voltage of the one terminal of the power semiconductor device, which changes as a function of current flow through the first resistor and the inductor, with a short-circuit detection voltage. A reference potential of the drive circuit is connected to the other end of the first resistor and the other end of the inductor.

Abstract: A fiber optic plate 122 including a plurality of core glasses 122a, a clad glass 122b covering the core glass 122a, and a light-absorbing glass 122c disposed between the plurality of core glasses 122a, wherein a content of TiO2 in the core glass 122a is 7% by mass or less, a content of B2O3 in the core glass 122a is 15% by mass or more, and a content of WO3 in the core glass 122a is more than 0% by mass.

Abstract: Provided is an X-ray shielding glass having high shielding capability against X-rays with a tube voltage of 150 kV or less. The X-ray shielding glass has a composition including: 15 mass % to 25 mass % B2O3; 7 mass % to 50 mass % La2O3; 7 mass % to 50 mass % Gd2O3; 10 mass % to 25 mass % WO3; 0 mass % to 7 mass % SiO2; 0 mass % to 10 mass % ZrO2; 0 mass % to 8 mass % Nb2O5; 0 mass % to 10 mass % Ta2O5; 0 mass % to 5 mass % Bi2O3; 0 mass % to 3 mass % CeO2; and 0 mass % to 1 mass % Sb2O3, wherein the glass contains no ZnO, the total content of La2O3 and Gd2O3 is 45 mass % to 65 mass %, and when the thickness of the glass is 3 mm, the transmittance of the glass to an X-ray from an X-ray tube with a tube voltage of 60 kV is 0.0050% or less, and the transmittance of the glass to an X-ray from an X-ray tube with a tube voltage of 100 kV is 0.1500% or less.

Abstract: The present invention relates to a powder material including metal particles, in which in a mass basis cumulative particle size distribution, the metal particles have a 10% particle diameter d10 of less than 16 ?m and a 90% particle diameter d90 of more than 35 ?m and when a specific energy obtained as a value yielded by dividing a flow energy measured as an energy acting on a blade spiraling upward in the powder material by a mass of the powder material is normalized with a bulk density of the powder material, a resulting value is less than 0.47 mJ·ml/g2 and relates to a producing method for the same.

Abstract: A drive circuit of a power semiconductor element comprises a gate drive voltage generator to generate, based on an ON/OFF drive timing signal input to an input terminal, a gate drive voltage to be applied to a gate electrode of a switching element having the gate electrode for controlling a main current that flows between a first main electrode and a second main electrode, wherein the gate drive voltage generator includes a gate current limiting circuit in which a current limiter to limit a current and a voltage limiter to limit the magnitude of a voltage applied to both ends of the current limiter are connected in parallel.

Abstract: A device for analyzing a worker's work state, the analysis involving generation of determination data for determining whether worker's manual work is performed in a predetermined work order. This device includes imaging and setting units. The imaging unit images, a work video, a worker's manual working state in which the worker repeatedly performs predetermined work. This predetermined work is performed by repeating a plurality of fundamental work operations by hand. Based on a predetermined motion which is previously set for each of the fundamental work operations, the setting unit sets delimitation information to delimit the work video every fundamental work operation at a timing when the predetermined motion is detected. In the device, a generation unit generates determination data which includes both the imaged work video and the set delimitation information. Based on the determination data, the worker's manual work can be analyzed in various ways.

Abstract: A power semiconductor device protection circuit includes: a drive circuit that drives a power semiconductor device; a current detector which includes a first resistor and an inductor connected in parallel; and a detection circuit that detects a short-circuit condition of the power semiconductor device. One end of the first resistor and one end of the inductor are connected to one terminal of the power semiconductor device. The detection circuit detects the short-circuit condition of the power semiconductor device by comparing a voltage of the one terminal of the power semiconductor device, which changes as a function of current flow through the first resistor and the inductor, with a short-circuit detection voltage. A reference potential of the drive circuit is connected to the other end of the first resistor and the other end of the inductor.

Abstract: A device for analyzing a worker's work state, the analysis involving generation of determination data for determining whether worker's manual work is performed in a predetermined work order. This device includes imaging and setting units. The imaging unit images, a work video, a worker's manual working state in which the worker repeatedly performs predetermined work. This predetermined work is performed by repeating a plurality of fundamental work operations by hand. Based on a predetermined motion which is previously set for each of the fundamental work operations, the setting unit sets delimitation information to delimit the work video every fundamental work operation at a timing when the predetermined motion is detected. In the device, a generation unit generates determination data which includes both the imaged work video and the set delimitation information. Based on the determination data, the worker's manual work can be analyzed in various ways.

Abstract: A pressure reducing valve control apparatus is provided for a fuel supply system having a common rail and a pressure reducing valve to control rail pressure in the common rail by controlling a current supply state of the pressure reducing valve. The pressure reducing valve operates to open a valve body for discharging fuel from the common rail against a biasing force applied in a valve-closing direction by fuel-generated valve-opening force biasing the valve body in a valve-opening direction by the rail pressure and an electromagnetic force generated by current supply to an electromagnetic coil. The ECU starts to open the valve body during a period of holding a hold value by holding current supplied to the electromagnetic coil at a predetermined hold value after starting current supply to the electromagnetic coil. The ECU sets the hold value to increase as the rail pressure decreases.

Abstract: During regenerative control of an inverter circuit, when a path between a DC power supply and a smoothing capacitor is in a disconnection state, a control circuit of a power conversion device performs control while switching between first control in which upper switching elements within the inverter circuit are turned on and all lower switching elements are turned off and second control in which the lower switching elements are turned on and all the upper switching elements are turned off, every predetermined switching period.

Abstract: During regenerative control of an inverter circuit, when a path between a DC power supply and a smoothing capacitor is in a disconnection state, a control circuit of a power conversion device performs control while switching between first control in which upper switching elements within the inverter circuit are turned on and all lower switching elements are turned off and second control in which the lower switching elements are turned on and all the upper switching elements are turned off, every predetermined switching period.

Abstract: A pressure reducing valve control apparatus is provided for a fuel supply system having a common rail and a pressure reducing valve to control rail pressure in the common rail by controlling a current supply state of the pressure reducing valve. The pressure reducing valve operates to open a valve body for discharging fuel from the common rail against a biasing force applied in a valve-closing direction by fuel-generated valve-opening force biasing the valve body in a valve-opening direction by the rail pressure and an electromagnetic force generated by current supply to an electromagnetic coil. The ECU starts to open the valve body during a period of holding a hold value by holding current supplied to the electromagnetic coil at a predetermined hold value after starting current supply to the electromagnetic coil. The ECU sets the hold value to increase as the rail pressure decreases.

Abstract: A temperature detection circuit for detecting a temperature of a switching element, a current source for causing a forward current to flow to the temperature detection circuit, an amplifier circuit for amplifying a forward voltage of the temperature detection circuit, a current adjustment circuit for adjusting a magnitude of a gate current to the switching element on the basis of an output voltage of the amplifier circuit, and a drive circuit for receiving an external signal and turning ON/OFF the switching element, are included. The magnitude of the gate current caused to flow from the current adjustment circuit to the gate electrode of the switching element is adjusted on the basis of a change in a magnitude of the forward voltage corresponding to a change in the temperature of the temperature detection circuit.

Abstract: A temperature detection circuit for detecting a temperature of a switching element, a current source for causing a forward current to flow to the temperature detection circuit, an amplifier circuit for amplifying a forward voltage of the temperature detection circuit, a current adjustment circuit for adjusting a magnitude of a gate current to the switching element on the basis of an output voltage of the amplifier circuit, and a drive circuit for receiving an external signal and turning ON/OFF the switching element, are included. The magnitude of the gate current caused to flow from the current adjustment circuit to the gate electrode of the switching element is adjusted on the basis of a change in a magnitude of the forward voltage corresponding to a change in the temperature of the temperature detection circuit.