Abstract: A hydrogenated conjugated diene-based polymer which has a structure formed by bonding a nitrogen-containing compound having two or more alkoxysilyl groups and two or more nitrogen atoms with a plurality of conjugated diene-based polymer chains, wherein: when a composition ratio (molar ratio) in the hydrogenated conjugated diene-based polymer of each of a structural unit represented by formula (1), a structural unit represented by formula (2), a structural unit represented by formula (3), and a structural unit represented by formula (4) is p, q, r, and s, respectively, a value a represented by formula (i) is 0.80 or more and 0.97 or less, and an equilibrium storage modulus E? of the hydrogenated conjugated diene-based polymer is 2.4 MPa or more, ?=(p+(0.5×r))/(p+q+(0.

Abstract: Disclosed is a light receiving element including an on-chip lens, a wiring layer, and a semiconductor layer disposed between the on-chip lens and the wiring layer. The semiconductor layer includes a photodiode, a first transfer transistor that transfers electric charge generated in the photodiode to a first charge storage portion, a second transfer transistor that transfers electric charge generated in the photodiode to a second charge storage portion, and an interpixel separation portion that separates the semiconductor layers of adjacent pixels from each other, for at least part of the semiconductor layer in the depth direction. The wiring layer has at least one layer including a light blocking member. The light blocking member is disposed to overlap with the photodiode in a plan view.

Abstract: A polymer composition includes a conjugated diene polymer (A) and a compound (B). The compound (B) is at least one compound selected from the group consisting of a polysiloxane compound and a fluorine-containing compound. The conjugated diene polymer (A) contains, when the composition ratios (molar ratios) in the polymer of the structural units represented by formulas (1) to (4) are p, q, r, and s, respectively, a polymer (A-1) satisfying formula (i). 0.75?(p+(0.5×r))/(p+q+(0.5×r)+s)?0.

Abstract: A terminal assembly structure according to an embodiment of the present invention includes: a crimp terminal having a crimp portion configured to crimp and connect a core wire of an electric wire and a fastening portion configured to be fastened by a fastening member; and a holder having a base portion configured to place the crimp terminal when fastening the crimp terminal to the holder. The holder has a detection rib at a position on the base portion to be oppose to the crimp portion of the crimp terminal, the detection rib being configured to interfere with the crimp portion when misassembly of front and back sides of the crimp terminal to the holder occurs.

Abstract: A polybutadiene composition which enables the achievement of a rubber material that has excellent crack propagation resistance and a method for producing this polybutadiene composition are provided. A polybutadiene composition is produced by a method that comprises a step Y wherein 1,3-butadiene is polymerized in the presence of 1,2-polybutadiene and a lanthanoid catalyst. A polybutadiene composition which contains 1,2-polybutadiene and 1,4-polybutadiene, and which is obtained by polymerizing 1,3-butadiene in the presence of 1,2-polybutadiene and a lanthanoid catalyst.

Abstract: A conjugated diene-based polymer, having a value ? of 0.65 to 0.97 as defined by the following mathematical expression (i): ?=(p+(0.5×r))/(p+q+(0.5×r)+s) ??(i) where p, q, r, and s represent compositional molar ratios of structural units in the conjugated diene-based polymer represented by the following formulas (1) to (4), respectively: The conjugated diene-based polymer contains, in an amount of 25 to 75 mass %, a polymer (A1) including a multi-branched structure having 4 or more molecular chains, and the polymer (A1) has a functional group containing at least one element selected from the group consisting of nitrogen, oxygen, and sulfur at one or both of a terminal and a branching point of the polymer (A1).

Abstract: Provided is a block polymer including two or more polymer block As each having a value ? of 0.20 or less and a functional group F containing at least one element selected from a group consisting of nitrogen, silicon, oxygen, and sulfur in a part or all of terminals of the two or more polymer block As, in which the block polymer has a value ? of 0.75 or more, when p, q, r and s are defined as a component proportion (molar proportion) of a structural unit represented by Formula (1), a component proportion of a structural unit represented by Formula (2), a component proportion of a structural unit represented by Formula (3), and a component proportion of a structural unit represented by Formula (4), in the polymer, respectively.

Abstract: There is provided a polymer composition using which a molded product having excellent balance between rigidity, wear resistance, viscoelastic properties, and heat resistance can be obtained. A polymer composition according to the disclosure includes (A) a conjugated diene rubber (where, a polymer corresponding to the following component (B) is excluded); and (B) a hydrogenated product of a polymer that satisfies the following (1) to (3), which is a polymer in which 80% or more of structural units derived from butadiene are hydrogenated: (1) being a copolymer of a conjugated diene compound containing butadiene and an aromatic vinyl compound, (2) including a polybutadiene block having a vinyl group content of 20% or less, and (3) including a block composed of a conjugated diene compound and an aromatic vinyl compound.

Abstract: A polymer composition includes a conjugated diene-based polymer (A) and a filler having a Mohs hardness of 5 or more (B), where the conjugated diene-based polymer (A) contains a polymer (A1) satisfying expression (i) when a composition ratio (molar ratio) of a structural unit represented by formula (1), a structural unit represented by formula (2), a structural unit represented by formula (3) and a structural unit represented by formula (4) in the polymer is p, q, r and s, respectively. 0.75?(p+(0.5×r))/(p+q+(0.5×r)+s)?0.

Abstract: A terminal assembly structure according to one or more embodiments includes: a terminal having a crimp portion configured to crimp and connect to a core wire of an electric wire and a fastening portion configured to be fastened by a fastening member; and a holder having a base configured to mount the terminal when fastening the terminal to the holder. The holder has a plurality of ribs extending in a fastening direction of the fastening member and arranged around the fastening portion of the terminal when the fastening portion is set and positioned onto the base.

Abstract: A polymer composition includes a conjugated diene-based polymer (A) and a liquid polymer (B). The conjugated diene-based polymer (A) includes a polymer (A1) satisfying expression (i) when a composition ratio (molar ratio) of a structural unit represented by formula (1), a structural unit represented by formula (2), a structural unit represented by formula (3) and a structural unit represented by formula (4) in the polymer is p, q, r and s, respectively; a glass transition temperature of the polymer (A1) is ?40° C. or less; and the liquid polymer (B) is polybutadiene, polyisoprene, polyisobutylene, polybutene, or the like. 0.75(p+(0.5×r))/(p+q+(0.5×r)+s)?0.

Abstract: A solid state imaging device including: a pixel region that is formed on a light incidence side of a substrate and to which a plurality of pixels that include photoelectric conversion units is arranged; a peripheral circuit unit that is formed in a lower portion in the substrate depth direction of the pixel region and that includes an active element; and a light shielding member that is formed between the pixel region and the peripheral circuit unit and that shields the incidence of light, emitted from an active element, to the photoelectric conversion unit.

Abstract: Disclosed is a light receiving element including an on-chip lens, a wiring layer, and a semiconductor layer disposed between the on-chip lens and the wiring layer. The semiconductor layer includes a photodiode, a first transfer transistor that transfers electric charge generated in the photodiode to a first charge storage portion, a second transfer transistor that transfers electric charge generated in the photodiode to a second charge storage portion, and an interpixel separation portion that separates the semiconductor layers of adjacent pixels from each other, for at least part of the semiconductor layer in the depth direction. The wiring layer has at least one layer including a light blocking member. The light blocking member is disposed to overlap with the photodiode in a plan view.

Abstract: To improve accuracy of distance measurement using a Z pixel having the same size as size of a visible light pixel. In a solid-state imaging apparatus, a visible light converting block includes a plurality of visible light converting units in which light receiving faces for receiving visible light are disposed and configured to generate electric charges in accordance with a light receiving amount of the received visible light, and a visible light electric charge holding unit configured to exclusively hold the electric charges respectively generated by the plurality of visible light converting units in periods different from each other.

Abstract: Disclosed is a light receiving element including an on-chip lens, a wiring layer, and a semiconductor layer disposed between the on-chip lens and the wiring layer. The semiconductor layer includes a photodiode, a first transfer transistor that transfers electric charge generated in the photodiode to a first charge storage portion, a second transfer transistor that transfers electric charge generated in the photodiode to a second charge storage portion, and an interpixel separation portion that separates the semiconductor layers of adjacent pixels from each other, for at least part of the semiconductor layer in the depth direction. The wiring layer has at least one layer including a light blocking member. The light blocking member is disposed to overlap with the photodiode in a plan view.

Abstract: Exposure with sufficient optical energy is enabled while avoiding temperature rise of laser light emitting elements. Therefore, a light source device includes the plurality of laser light emitting elements and a drive unit. The drive unit drives each of the laser light emitting elements to perform a plurality of light emissions in one frame period in an image sensor that receives and captures light emitted from the plurality of laser light emitting elements and reflected by a subject.

Abstract: The present technology relates to a light receiving element, an imaging element, and an imaging device. A light receiving element includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer. The semiconductor layer includes a first voltage application unit to which a first voltage is applied, a second voltage application unit to which a second voltage is applied, a first charge detection unit, and a second charge detection unit. The wiring layer includes at least one layer including first voltage application wiring configured to supply the first voltage, second voltage application wiring configured to supply the second voltage, and a reflection member that overlaps the first charge detection unit or the second charge detection unit, in plan view. The present technology, for example, can be applied to a light receiving element configured to measure a distance.

Abstract: The present disclosure relates to a solid-state imaging device and an electronic device that are configured to suppress the occurrence of noise and white blemishes in an amplification transistor having an element separation region which is formed by ion implantation. An amplification transistor has an element separation region formed by ion implantation. A channel region insulating film which is at least a part of a gate insulating film above a channel region of the amplification transistor is thin compared to a gate insulating film of a selection transistor, and an element separation region insulating film which is at least a part of a gate insulating film above the element separation region of the amplification transistor is thick compared to the channel region insulating film. The present disclosure can be applied to, for example, a CMOS image sensor, etc.

Abstract: Disclosed is a light receiving element including an on-chip lens, a wiring layer, and a semiconductor layer disposed between the on-chip lens and the wiring layer. The semiconductor layer includes a photodiode, a first transfer transistor that transfers electric charge generated in the photodiode to a first charge storage portion, a second transfer transistor that transfers electric charge generated in the photodiode to a second charge storage portion, and an interpixel separation portion that separates the semiconductor layers of adjacent pixels from each other, for at least part of the semiconductor layer in the depth direction. The wiring layer has at least one layer including a light blocking member. The light blocking member is disposed to overlap with the photodiode in a plan view.

Abstract: A terminal assembly structure according to one or more embodiments includes: a terminal having a crimp portion configured to crimp and connect to a core wire of an electric wire and a fastening portion configured to be fastened by a fastening member; and a holder having a base configured to mount the terminal when fastening the terminal to the holder. The holder has a plurality of ribs extending in a fastening direction of the fastening member and arranged around the fastening portion of the terminal when the fastening portion is set and positioned onto the base.