Patents by Inventor Takuya Seino
Takuya Seino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230178378Abstract: An etching method includes a preparing step and a removing step. In the preparing step, a substrate is prepared which includes a first film, a second film stacked on the first film, and a hard mask stacked on the second film, such that the second film is etched with the hard mask having a formed pattern as a mask until the first film is exposed. In the removing step, the hard mask is removed using a fluorine-containing gas. Further, the removing step is executed for a time longer than a first time from a start of a supply of the fluorine-containing gas to a start of an etching of the hard mask, and shorter than a second time from the start of the supply of the fluorine-containing gas to a start of an etching of the first film.Type: ApplicationFiled: January 18, 2023Publication date: June 8, 2023Applicant: Tokyo Electron LimitedInventors: Noriaki OKABE, Naoki SHINDO, Gen YOU, Takuya SEINO
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Publication number: 20230051865Abstract: The PVD apparatus includes a chamber, a plurality of stages, a first target holder, a power supply mechanism, and a shield. The plurality of stages are provided inside the chamber, and each of the plurality of stages is configured to place at least one substrate on an upper surface thereof. The first target holder is configured to hold at least one target provided for one stage, the target being exposed to a space inside the chamber. The power supply mechanism supplies power to the target via the first target holder. The shield is provided inside the chamber and a part of the shield is disposed between a first stage and a second stage in the plurality of stages, and between a first processing space on the first stage and a second processing space on the second stage.Type: ApplicationFiled: October 28, 2022Publication date: February 16, 2023Applicant: Tokyo Electron LimitedInventors: Takuya SEINO, Yasushi KODASHIMA, Naoki WATANABE, Hiroyuki TOSHIMA, Masato SHINADA, Tetsuya MIYASHITA
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Publication number: 20210280419Abstract: A method of processing a wafer includes preparing a wafer having a substrate and a silicon-containing film formed on the substrate; forming a hard mask on the silicon-containing film; forming a pattern on the hard mask by etching the hard mask; and etching the silicon-containing film using the hard mask on which the pattern is formed, wherein the hard mask has a first film formed on the silicon-containing film and containing tungsten, and a second film formed on the first film and containing zirconium or titanium and oxygen.Type: ApplicationFiled: March 3, 2021Publication date: September 9, 2021Inventors: Noriaki OKABE, Takuya SEINO, Ryota KOZUKA, Yasuhiro HAMADA, Yuutaro KISHI
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Patent number: 11035034Abstract: The present invention provides a film formation method and a film formation apparatus which can fabricate an epitaxial film with +c polarity by a sputtering method. In one embodiment of the present invention, the film formation method of epitaxially growing a semiconductor thin film with a wurtzite structure by the sputtering method on an epitaxial growth substrate heated to a predetermined temperature by a heater includes the following steps. First, the substrate is disposed on a substrate holding portion including the heater to be located at a predetermined distance away from the heater. Then, the epitaxial film of the semiconductor film with the wurtzite structure is formed on the substrate with the impedance of the substrate holding portion being adjusted.Type: GrantFiled: January 26, 2017Date of Patent: June 15, 2021Assignee: CANON ANELVA CORPORATIONInventors: Yoshiaki Daigo, Takuya Seino, Yoshitaka Ohtsuka, Hiroyuki Makita, Sotaro Ishibashi, Kazuto Yamanaka
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Patent number: 10361363Abstract: A method includes: a first film formation process forming a film by sputtering a first insulator target when a projection plane of the first insulator target on a plane including a front face of a substrate is in a first state; and a second film formation process forming a film by sputtering a second insulator target when a projection plane of the second insulator target formed on the plane including the front face of the substrate is in a second state different from the first state. The second film formation process provides the insulating film having a second characteristic variation having opposite tendency to a first characteristic variation in the film provided by the first film formation process, the first characteristic variation occurring from a center portion to a peripheral portion of the substrate, the second characteristic variation occurring at least partly from the center portion to the peripheral portion.Type: GrantFiled: May 31, 2016Date of Patent: July 23, 2019Assignee: CANON ANELVA CORPORATIONInventors: Yuichi Otani, Takuya Seino
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Patent number: 10153426Abstract: This invention provides a manufacturing method of a magnetoresistive effect element having a higher MR ratio than a conventional element. A manufacturing method of a magnetoresistive effect element of an embodiment of the invention includes: a step of forming a tunnel barrier layer on a substrate, on a surface of which one of a magnetization free layer and a magnetization fixed layer is formed; a step of cooling the substrate after the step of forming a tunnel barrier layer; a step of forming an other one of the magnetization free layer and the magnetization fixed layer on the tunnel barrier layer after the step of cooling; and a step of raising a temperature of the substrate after the step of forming the other one of the magnetization free layer and the magnetization fixed layer.Type: GrantFiled: April 21, 2016Date of Patent: December 11, 2018Assignee: CANON ANELVA CORPORATIONInventors: Takuya Seino, Yuichi Otani, Kazumasa Nishimura
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Patent number: 10083830Abstract: It was found out that when radicals generated by plasma are fed to a treatment chamber via a plurality of holes (111) formed on a partition plate which separates a plasma-forming chamber (108) from the treatment chamber, and the radicals are mixed with a treatment gas which is separately fed to the treatment chamber, the excitation energy of the radicals is suppressed and thereby the substrate surface treatment at high Si-selectivity becomes possible, which makes it possible to conduct the surface treatment of removing native oxide film and organic matter without deteriorating the flatness of the substrate surface. The radicals in the plasma are fed to the treatment chamber via radical-passing holes (111) of a plasma-confinement electrode plate (110) for plasma separation, the treatment gas is fed to the treatment chamber (121) to be mixed with the radicals in the treatment chamber, and then the substrate surface is cleaned by the mixed atmosphere of the radicals and the treatment gas.Type: GrantFiled: May 23, 2016Date of Patent: September 25, 2018Assignee: CANON ANELVA CORPORATIONInventors: Takuya Seino, Manabu Ikemoto, Kimiko Mashimo
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Patent number: 9929340Abstract: An embodiment of the present invention is a method of manufacturing a perpendicular MTJ device which includes: a first stacked structure including a pair of CoFeB layers sandwiching an MgO layer; and a second stacked structure including a multilayer, the method comprising the steps of: forming one of the first and second stacked structures on a substrate; inspecting a property of the substrate with the one of the first and second stacked structures formed thereon while exposing the substrate to the atmosphere; and forming another one of the first and second stacked structures on the substrate with the one of the first and second stacked structures formed thereon.Type: GrantFiled: July 19, 2017Date of Patent: March 27, 2018Assignee: CANON ANELVA CORPORATIONInventor: Takuya Seino
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Patent number: 9905441Abstract: An oxidation process apparatus according to one embodiment of the present invention includes: a substrate holder provided in a processing chamber and having a substrate holding surface; a gas introduction unit for introducing an oxygen gas; a cylindrical member; and a substrate holder drive unit for changing relative positions of the substrate holder and the cylindrical member to allow the substrate holding surface and the cylindrical member to form an oxidation process space. The cylindrical member is provided so as to form a gap between the cylindrical member and the substrate holder during formation of the space. The oxygen gas is introduced restrictively into the space. The oxygen gas introduced from the gas introduction unit is evacuated through the gap.Type: GrantFiled: June 17, 2015Date of Patent: February 27, 2018Assignee: CANON ANELVA CORPORATIONInventors: Yoshimitsu Shimane, Takuya Seino
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Patent number: 9865805Abstract: Provided is a method for manufacturing a magnetoresistive element, including a step of forming a tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes a deposition step of depositing a metal film on top of a substrate, and an oxidation step of subjecting the metal film to an oxidation process. The oxidation step includes holding the substrate having Mg formed thereon, on a substrate holder in a processing container in which the oxidation process is performed, supplying an oxygen gas to the substrate by introducing the oxygen gas into the processing container, at a temperature at which Mg does not sublime, and heating the substrate after the introduction of the oxygen gas.Type: GrantFiled: June 17, 2015Date of Patent: January 9, 2018Assignee: CANON ANELVA CORPORATIONInventors: Takuya Seino, Kazumasa Nishimura, Hiroki Okuyama, Yuichi Otani, Yuta Murooka, Yoshimitsu Shimane
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Patent number: 9853207Abstract: A magnetoresistance effect element of the present invention includes: a barrier layer; a reference layer formed on one surface of the barrier layer; a free layer formed on the other surface of the barrier layer; and a pinned layer placed on the opposite side of the reference layer from the barrier layer. The pinned layer includes a structure obtained by stacking Ni, Co, Pt, Co, Ru, Co, Pt, Co, and Ni layers in this order.Type: GrantFiled: September 7, 2016Date of Patent: December 26, 2017Assignee: CANON ANELVA CORPORATIONInventors: Takuya Seino, Kazumasa Nishimura, Toshikazu Irisawa, Saki Shibuichi
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Publication number: 20170317274Abstract: An embodiment of the present invention is a method of manufacturing a perpendicular MTJ device which includes: a first stacked structure including a pair of CoFeB layers sandwiching an MgO layer; and a second stacked structure including a multilayer, the method comprising the steps of: forming one of the first and second stacked structures on a substrate; inspecting a property of the substrate with the one of the first and second stacked structures formed thereon while exposing the substrate to the atmosphere; and forming another one of the first and second stacked structures on the substrate with the one of the first and second stacked structures formed thereon.Type: ApplicationFiled: July 19, 2017Publication date: November 2, 2017Inventor: Takuya Seino
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Publication number: 20170145588Abstract: The present invention provides a film formation method and a film formation apparatus which can fabricate an epitaxial film with +c polarity by a sputtering method. In one embodiment of the present invention, the film formation method of epitaxially growing a semiconductor thin film with a wurtzite structure by the sputtering method on an epitaxial growth substrate heated to a predetermined temperature by a heater includes the following steps. First, the substrate is disposed on a substrate holding portion including the heater to be located at a predetermined distance away from the heater. Then, the epitaxial film of the semiconductor film with the wurtzite structure is formed on the substrate with the impedance of the substrate holding portion being adjusted.Type: ApplicationFiled: January 26, 2017Publication date: May 25, 2017Inventors: YOSHIAKI DAIGO, TAKUYA SEINO, YOSHITAKA OHTSUKA, HIROYUKI MAKITA, SOTARO ISHIBASHI, KAZUTO YAMANAKA
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Publication number: 20160380187Abstract: A magnetoresistance effect element of the present invention includes: a barrier layer; a reference layer formed on one surface of the barrier layer; a free layer formed on the other surface of the barrier layer; and a pinned layer placed on the opposite side of the reference layer from the barrier layer. The pinned layer includes a structure obtained by stacking Ni, Co, Pt, Co, Ru, Co, Pt, Co, and Ni layers in this order.Type: ApplicationFiled: September 7, 2016Publication date: December 29, 2016Inventors: Takuya Seino, Kazumasa Nishimura, Toshikazu Irisawa, Saki Shibuichi
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Publication number: 20160343565Abstract: It was found out that when radicals generated by plasma are fed to a treatment chamber via a plurality of holes (111) formed on a partition plate which separates a plasma-forming chamber (108) from the treatment chamber, and the radicals are mixed with a treatment gas which is separately fed to the treatment chamber, the excitation energy of the radicals is suppressed and thereby the substrate surface treatment at high Si-selectivity becomes possible, which makes it possible to conduct the surface treatment of removing native oxide film and organic matter without deteriorating the flatness of the substrate surface. The radicals in the plasma are fed to the treatment chamber via radical-passing holes (111) of a plasma-confinement electrode plate (110) for plasma separation, the treatment gas is fed to the treatment chamber (121) to be mixed with the radicals in the treatment chamber, and then the substrate surface is cleaned by the mixed atmosphere of the radicals and the treatment gas.Type: ApplicationFiled: May 23, 2016Publication date: November 24, 2016Inventors: Takuya SEINO, Manabu IKEMOTO, Kimiko MASHIMO
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Publication number: 20160276583Abstract: A method includes: a first film formation process forming a film by sputtering a first insulator target when a projection plane of the first insulator target on a plane including a front face of a substrate is in a first state; and a second film formation process forming a film by sputtering a second insulator target when a projection plane of the second insulator target formed on the plane including the front face of the substrate is in a second state different from the first state. The second film formation process provides the insulating film having a second characteristic variation having opposite tendency to a first characteristic variation in the film provided by the first film formation process, the first characteristic variation occurring from a center portion to a peripheral portion of the substrate, the second characteristic variation occurring at least partly from the center portion to the peripheral portion.Type: ApplicationFiled: May 31, 2016Publication date: September 22, 2016Inventors: Yuichi Otani, Takuya Seino
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Patent number: 9437702Abstract: It is an object of the present invention to provide an electronic component manufacturing method, capable of suppressing reduction in a trench opening and suppressing diffusion of a metal film embedded in a trench. An embodiment of the present invention is an electronic component manufacturing method, including the steps of: forming a first electrode constituting layer (e.g., a TiAl film) in a recess (e.g., a trench) formed in a workpiece; forming an ultrathin barrier layer (e.g., a TiAlN film) by forming a nitride layer by plasma-nitriding a surface of the first electrode constituting layer; and forming a second electrode constituting layer (e.g., an Al wiring layer) on the ultrathin barrier layer.Type: GrantFiled: July 10, 2014Date of Patent: September 6, 2016Assignee: CANON ANELVA CORPORATIONInventors: Akira Matsuo, Yohsuke Shibuya, Naomu Kitano, Eitaroh Morimoto, Koji Yamazaki, Yu Sato, Takuya Seino
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Publication number: 20160240772Abstract: This invention provides a manufacturing method of a magnetoresistive effect element having a higher MR ratio than a conventional element. A manufacturing method of a magnetoresistive effect element of an embodiment of the invention includes: a step of forming a tunnel barrier layer on a substrate, on a surface of which one of a magnetization free layer and a magnetization fixed layer is formed; a step of cooling the substrate after the step of forming a tunnel barrier layer; a step of forming an other one of the magnetization free layer and the magnetization fixed layer on the tunnel barrier layer after the step of cooling; and a step of raising a temperature of the substrate after the step of forming the other one of the magnetization free layer and the magnetization fixed layer.Type: ApplicationFiled: April 21, 2016Publication date: August 18, 2016Inventors: Takuya Seino, Yuichi Otani, Kazumasa Nishimura
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Publication number: 20160005958Abstract: Provided is a method for manufacturing a magnetoresistive element, including a step of forming a tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes a deposition step of depositing a metal film on top of a substrate, and an oxidation step of subjecting the metal film to an oxidation process. The oxidation step includes holding the substrate having Mg formed thereon, on a substrate holder in a processing container in which the oxidation process is performed, supplying an oxygen gas to the substrate by introducing the oxygen gas into the processing container, at a temperature at which Mg does not sublime, and heating the substrate after the introduction of the oxygen gas.Type: ApplicationFiled: June 17, 2015Publication date: January 7, 2016Inventors: Takuya Seino, Kazumasa Nishimura, Hiroki Okuyama, Yuichi Otani, Yuta Murooka, Yoshimitsu Shimane
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Publication number: 20150318466Abstract: An oxidation process apparatus according to one embodiment of the present invention includes: a substrate holder provided in a processing chamber and having a substrate holding surface; a gas introduction unit for introducing an oxygen gas; a cylindrical member; and a substrate holder drive unit for changing relative positions of the substrate holder and the cylindrical member to allow the substrate holding surface and the cylindrical member to form an oxidation process space. The cylindrical member is provided so as to form a gap between the cylindrical member and the substrate holder during formation of the space. The oxygen gas is introduced restrictively into the space. The oxygen gas introduced from the gas introduction unit is evacuated through the gap.Type: ApplicationFiled: June 17, 2015Publication date: November 5, 2015Inventors: Yoshimitsu Shimane, Takuya Seino