Abstract: A field effect transistor of an exemplary embodiment of the present invention includes, on a plane thereof, in order, a source electrode, a first gate electrode, and a drain electrode, and includes in a direction perpendicular to the plane, in order, a first barrier layer, a second gate electrode disposed in the first barrier layer, a first channel layer made of a semiconductor, a second barrier layer which is made of a semiconductor having an energy gap larger than that of the first channel layer and includes an ?-doped layer, a second channel layer made of a semiconductor having an energy gap smaller than that of the second barrier layer, a third barrier layer, and the first gate electrode.

Abstract: A semiconductor device according to embodiments of the present invention is a field-effect transistor including a gate electrode between a source electrode and a drain electrode, wherein carriers travel between the source electrode and the drain electrode, a channel control layer is provided between a channel through with the carriers travel and the gate electrode, a recess is disposed at least in part of a surface in contact with the gate electrode on a source electrode side in the channel control layer, and a part of the gate electrode is filled in the recess.

Abstract: A liquid ejection device includes a liquid ejection head, a standby portion, a hold portion, and an operation portion. The liquid ejection head includes a nozzle surface. The standby portion supports a wiping cartridge. The hold portion holds the wiping cartridge. The operation portion moves the hold portion relatively to the standby portion and the liquid ejection head from a position at which the hold portion holds the wiping cartridge that is not held by the hold portion and that is supported by the standby portion to a position at which the wiping cartridge held by the hold portion comes into contact with the nozzle surface.

Abstract: A gate electrode includes a main portion formed of a gate electrode material, and a gate electrode barrier layer disposed between the main portion and a barrier layer and formed of a conductive material that prevents the gate electrode material from diffusing into the barrier layer. A surface of the main portion in a region above a first insulating layer faces a periphery without a layer of the conductive material being formed.

Abstract: A field-effect transistor includes a channel layer made of a compound semiconductor and formed on a substrate; a gate electrode formed on the channel layer; and a source electrode and a drain electrode, which are formed with the gate electrode interposed therebetween. At least one of the source electrode and the drain electrode is formed on a substrate side of the channel layer.

Abstract: A field effect transistor includes a first etching stop structure and a second etching stop structure. The first etching stop structure is formed on a first side surface of a recess region that is a boundary between a cap layer on a side of a source electrode and the recess region. The second etching stop structure is formed on a second side surface of the recess region that is a boundary between the cap layer on a side of a drain electrode and the recess region.

Abstract: A field effect transistor includes a first etching stop structure and a second etching stop structure. The first etching stop structure is formed on a first side surface of a recess region that is a boundary between a cap layer on a side of a source electrode and the recess region. The second etching stop structure is formed on a second side surface of the recess region that is a boundary between the cap layer on a side of a drain electrode and the recess region.

Abstract: A power supply device with enhanced safety is provided. A power supply device (100) includes secondary battery cells (1) each including a positive electrode (2) including a safety valve on one end surface of each cell, a battery holder holding the secondary battery cells (1) each including the positive electrode (2) on the one end surface thereof, and a housing (20) having a bottom surface (22), a top surface (23), and an inner space which accommodates the battery holder therein. The battery holder holds the secondary battery cells (1) upright in parallel to one another such that the positive electrode (2) on the one end surface of each cell (1) is directed vertically downward. In the housing (20), the battery holder retains the positive electrode (2) of each cell (1) spaced apart from the bottom surface (22) across a first space (SP1).

Abstract: A wiping member includes an elastic member and a liquid retention member. The elastic member includes a first surface and a second surface facing in different directions. The liquid retention member overlaps the elastic member over the first surface and the second surface, and has liquid retention properties.

Abstract: A gate opening portion, which is disposed within a recess formation region in a state where the distance from a drain electrode is greater than the distance from a source electrode, is formed in an insulating layer. The gate opening portion is a stripe-shaped opening that extends in a gate width direction. Also, a plurality of asymmetric recess-forming opening portions are formed, arranged in a row in the gate width direction between the gate opening portion and the drain electrode within the recess formation region in the insulating layer. In this step, asymmetric recess-forming opening portions are formed whose opening size in the gate length direction is greater than the opening size in the gate width direction.

Abstract: A gate opening, a plurality of first openings arranged in a gate widthwise direction and having a reed shape, a second opening connecting the adjacent first openings, and a third opening connected to a side away from the arrangement of the first opening at an end of the arrangement are formed in an insulation layer. An ohmic cap layer is etched via the openings to form an asymmetric recess region.

Abstract: A groove is formed around a chip region of a principal surface of a substrate by an etching process or cutting with a dicing blade (a second step). Next, the substrate is thinned from a back-surface side of the substrate to cause a bottom of the groove to reach a backside of the substrate to serve as a space, thus cutting out a portion that is to be a chip of the chip region (a third step).

Abstract: A semiconductor device (field effect transistor) includes a gate insulating layer between both of a bottom part and a lateral surface of a recess part and a penetration portion of a gate electrode. The gate insulating layer is composed of an oxide of a substance which a barrier layer is composed of For example, the gate insulating layer is composed of a layer of In oxide and a layer of Al oxide.

Abstract: A gate electrode includes a main portion formed of a gate electrode material, and a gate electrode barrier layer disposed between the main portion and a barrier layer and formed of a conductive material that prevents the gate electrode material from diffusing into the barrier layer. A surface of the main portion in a region above a first insulating layer faces a periphery without a layer of the conductive material being formed.

Abstract: A gate opening, a plurality of first openings arranged in a gate widthwise direction and having a reed shape, a second opening connecting the adjacent first openings, and a third opening connected to a side away from the arrangement of the first opening at an end of the arrangement are formed in an insulation layer. An ohmic cap layer is etched via the openings to form an asymmetric recess region.

Abstract: A gate opening portion, which is disposed within a recess formation region in a state where the distance from a drain electrode is greater than the distance from a source electrode, is formed in an insulating layer. The gate opening portion is a stripe-shaped opening that extends in a gate width direction. Also, a plurality of asymmetric recess-forming opening portions are formed, arranged in a row in the gate width direction between the gate opening portion and the drain electrode within the recess formation region in the insulating layer. In this step, asymmetric recess-forming opening portions are formed whose opening size in the gate length direction is greater than the opening size in the gate width direction.

Abstract: A battery pack includes: a plurality of battery cells (1); and heat dissipating holder (2) that is disposed among battery cells (1) and is in contact with the battery cells (1) in a thermally coupled state. Heat dissipating holder (2) includes: holder body (3) having insertion holes into which battery cells (1) are inserted; and thermally-conductive insulating rubber (4) having elastic cylinders to be disposed on the inner surfaces of the insertion holes. Each elastic cylinder includes a plurality of elastic projections projecting on its inner surface. The inner shape of each elastic cylinder in a non-insertion state of battery cell (1) is made smaller than the outer shape of battery cell (1). In heat dissipating holder (2), battery cells (1) inserted into the elastic cylinders are disposed at fixed positions in the insulated state. The elastic projections are elastically pressed on and closely contact the periphery of battery cell (1).

Abstract: There is provided a part holding head assembly of a part mounting device including: a rotary head; a spindle configured to rotate in a first direction T with respect to a central axis of the spindle and configured to move in a second direction Z substantially parallel with an extending direction of the central axis of the spindle; a nozzle provided at a first end of the spindle; a raising part configured to move the spindle to in the second direction Z; and a contact detecting sensor configured to sense the nozzle contacting a part or the part held by the nozzle contacting a substrate and configured to generate a contact sensing signal according to the sensing.

Abstract: There is provided a part holding head assembly of a part mounting device including: a rotary head; a spindle configured to rotate in a first direction T with respect to a central axis of the spindle and configured to move in a second direction Z substantially parallel with an extending direction of the central axis of the spindle; a nozzle provided at a first end of the spindle; a raising part configured to move the spindle to in the second direction Z; and a contact detecting sensor configured to sense the nozzle contacting a part or the part held by the nozzle contacting a substrate and configured to generate a contact sensing signal according to the sensing.

Abstract: Battery block includes a plurality of cells having safety valve on the negative electrode side, positive electrode plate part provided to the positive electrode side of cells and negative electrode plate part provided to the negative electrode side of cells in order to connect cells in parallel, duct cover covering the negative electrode side of cells and constituting duct chamber for exhausting exhaust gas discharged from safety valve, and insulating case for housing cells inside thereof. Negative electrode plate part is an elastic electrode plate part in elastic contact with negative electrode terminal, and duct cover is integrated with negative electrode plate part while pressing negative electrode plate part against negative electrode terminal at a predetermined pressing pressure.