Abstract: According to the present disclosure, a grain-oriented electrical steel sheet is obtainable that includes a forsterite film having high separation resistance with respect to smaller bending radius processing, even with an inhibitor-less chemical composition, due to the steel sheet containing a defined chemical composition and by making one or both peaks of Ti and Nb intensity, obtained by GDS analysis, be on a steel substrate side of a ½ position of thickness of the forsterite film.

Abstract: A semiconductor device including an active portion is provided, the semiconductor device comprising: a drift region of a first conductivity type provided in the semiconductor substrate; a base region of a second conductivity type provided above the drift region; a gate pad provided above the semiconductor substrate; an emitter electrode provided above the semiconductor substrate; a gate trench portion provided on a front surface of the semiconductor substrate in the active portion; and a gate wiring portion for connecting the gate pad and the gate trench portion; wherein the gate wiring portion has: a first gate trench wiring portion which extends in a predetermined direction; and a second gate trench wiring portion which extends in a different direction from the first gate trench wiring portion and intersects the first gate trench wiring portion at an intersection portion; and the emitter electrode is provided above the intersection portion.

Abstract: An information processing system includes one or plural processors configured to: acquire, for work performed by a user according to an AR manual indicating a work procedure for a target device, a record of an operation received by the target device in a period in which the work is performed; acquire image data in which a state of an operation performed by the user on the target device is imaged in the period in which the work is performed; and display correspondence information related to a correspondence between the operation received by the target device in the record and the operation performed by the user on the target device in the image data on a display unit.

Abstract: A semiconductor storage device includes a first conductive layer. A stacked body includes a plurality of electrode films and a plurality of first insulating films alternately stacked in a first direction of the first conductive layer, in the first direction. A columnar body includes a semiconductor layer penetrating the stacked body in the first direction. A second insulating film is provided on an inner wall of a slit penetrating the stacked body in the first direction. Wiring is provided at an inside of the second insulating film in the slit, is electrically separated from the plurality of electrode films by the second insulating film, and is electrically connected to the first conductive layer. A third insulating film extends in a first surface intersecting the first direction in the first conductive layer. The third insulating film protrudes from the inner wall of the slit toward the wiring.

Abstract: Provided is a method for manufacturing a grain-oriented electrical steel sheet with excellent uniformity of magnetic properties in the sheet transverse direction without increasing production costs. An ignition loss of an annealing separator after drying: IGLOSS (mass %), a storage time of a cold-rolled steel sheet: T (hr), and a carbon dioxide concentration in a storage environment of the cold-rolled steel sheet: A (mass ppm) satisfy the following formula (1): A × IGLOSS ? - 1500 × Ln ? ( T ) + 9000.

Abstract: An inspection device for a pillar shaped honeycomb filter, wherein the inspection device includes: a housing portion; an introduction pipe and a discharge pipe, each of the introduction pipe and the discharge pipe being connected to the housing portion; a particle generation portion for generating particles; a particle introduction portion for introducing the particles generated by the particle generation portion into the introduction pipe; a gas stirring portion disposed in the introduction pipe on an upstream side of the particle introduction portion; a particle concentration adjusting portion disposed in the introduction pipe on a downstream side of the particle introduction portion; and particle counters for measuring the number of particles, the particle counters being disposed in the introduction pipe and the discharge pipe on the downstream side of the particle introduction portion.

Abstract: Proposed is a way to improve film adhesion when magnetic domain refining treatment is performed. The Mn+Fe concentration in the ceramic base film of a grain-oriented electrical steel sheet is 0.05 mass % or more, and the Young's modulus of the base film is 108 GPa to 144 GPa.

Abstract: In determining the conditions for final annealing, information on the concentration of enriched components over the entire length and width of the steel sheet after decarburization annealing is obtained, the optimum function of product properties in the relationship between enriched components and control conditions for final annealing is obtained in advance, and the distribution of the control conditions for final annealing within the coil were considered while determining the control conditions for final annealing such that the area where the deviation of the product properties from the above optimum function is within a range of ±? is maximized over the entire length and width.

Abstract: To provide a method of producing a grain-oriented electrical steel sheet whereby greater purification of an inhibitor-strengthening element can be promoted by improvement of an annealing separator and, as a result, iron loss can be effectively improved. The annealing separator contains 1 to 10 parts by mass of a composite oxide, relative to 100 parts by mass of MgO, the composite oxide containing at least one selected from a Group 1: Fe, Mn, Al and Ca, and at least one of a Group 2: Zr, Ta, Mo and Nb.

Abstract: A method for producing a ceramic formed body comprises: a wet mixing step of adding a liquid containing water to ceramic raw material mixed powder and subjecting it to wet mixing in a continuous mixer; and an extrusion molding step of feeding the wet mixed powder obtained in the wet mixing step to an extruder by a belt feeder and extruding the wet mixed powder. In the method for producing the ceramic formed body, an amount of the wet mixed powder fed to the extruder is adjusted based on an amount of mass change of the wet mixed powder stored in a reservoir provided between the continuous mixer and the belt feeder.

Abstract: Provided is a semiconductor device comprising: a plurality of trench portions include a gate trench portion and a dummy trench portion; a first lower end region of a second conductivity type that is provided to be in contact with lower ends of two or more trench portions which include the gate trench portion; a well region of a second conductivity type that is arranged in a different location from the first lower end region in a top view, and a second lower end region of a second conductivity type that is provided between the first lower end region and the well region in a top view being separated from the first lower end region and the well region, and provided to be in contact with lower ends of one or more trench portions including the gate trench portion.

Abstract: Provided is a semiconductor device comprising: a plurality of trench portions; a first lower end region of a second conductivity type that is provided to be in contact with lower ends of two or more trench portions which include the gate trench portion; a well region of the second conductivity type that is arranged in a different location from the first lower end region in a top view, and a second lower end region of the second conductivity type that is provided between the first lower end region and the well region in a top view being separated from the first lower end region and the well region, and provided to be in contact with lower ends of one or more trench portions including the gate trench portion.

Abstract: Provided is a semiconductor device including a transistor portion, in which the transistor portion has a drift region of a first conductivity type provided in a semiconductor substrate, a base region of a second conductivity type provided above the drift region, an accumulation region of the first conductivity type provided above the drift region, a plurality of trench portions provided to extend from a front surface of the semiconductor substrate to the drift region, and a trench bottom portion of the second conductivity type provided in bottom portions of the plurality of trench portions, and the accumulation region has a doping concentration with a half width of 0.3 ?m or more.

Abstract: Provided is a method for stably producing a grain-oriented electrical steel sheet with excellent magnetic properties by effectively purifying inhibitors. The method for producing a grain-oriented electrical steel sheet includes using a steel slab containing a predetermined amount of at least one of Ti, Zr, Hf, V, Nb, and Ta, and applying an annealing separator, in which 1 part by mass to 10 parts by mass of a metal compound is added with respect to 100 parts by mass of MgO, on the steel sheet surface with a ratio of particles with a particle size of 1 ?m or more in the metal compound being 0.0010 particles/?m2 or less.

Abstract: Provided is a semiconductor device comprising: a semiconductor substrate including a drift region of a first conductivity type; a base region of a second conductivity type provided between the drift region and the upper surface of the semiconductor substrate; a plurality of trench portions provided from the upper surface of the semiconductor substrate to below the base region; a lower end region of the second conductivity type provided in contact with lower ends of two or more trench portions; a well region of the second conductivity type which is provided from the upper surface of the semiconductor substrate to below the base region, and has a higher doping concentration than the base region; and a high resistance region of the second conductivity type which is arranged between the lower end region and the well region in the top view and has a lower doping concentration than the lower end region.

Abstract: Provided is an insulated gate bipolar transistor including: a base region which is provided between an emitter region and a drift region; an accumulation region which is provided between a base region and a drift region, and which has a doping concentration higher than that of the drift region; a gate trench portion which is provided from an upper surface of a semiconductor substrate to a portion below the accumulation region; and a lower end region which is provide to be in contact with a lower end of the gate trench portion; wherein the accumulation region has a first concentration peak in which the doping concentration indicates a maximum value in a depth direction, and a distance between the first concentration peak and the lower end region in a depth direction is less than a distance between the first concentration peak and the base region in the depth direction.

Abstract: An intake system of an engine including an intake manifold, which includes an intake air introducing pipe and a plurality of independent intake pipes, is provided. Each of the independent intake pipes has an arc shape surrounding the intake air introducing pipe from outside with a space. A first independent intake pipe is curved more in the cylinder lined-up direction than a second. From the side in the cylinder lined-up direction, the arc shape of the second independent intake pipe is more distant from the intake air introducing pipe. To a first member constituting part of the intake air introducing pipe, a second member is joined to form the arc shape of the first independent intake pipe. A third member disposed radially outward from the first member is joined to the second member to form the arc shape of the second independent intake pipe.

Abstract: To stably produce grain-oriented electrical steel sheets with excellent film properties and magnetic properties. A method of producing a grain-oriented electrical steel sheet of this disclosure comprises subjecting a steel slab containing predetermined additive elements to hot rolling; subjecting the hot-rolled sheet to cold rolling to have a final sheet thickness; subjecting the cold-rolled sheet to decarburization annealing; applying an annealing separator having MgO as a main component to the decarburization annealing sheet; and subjecting the decarburization annealing sheet to finish annealing. The main component of the annealing separator has a BET specific surface area ratio H2O/N2 of 0.6 to 1.6 and a percentage of particles with a particle size of 40 µm or more in a slurry state of 5 mass% or less.

Abstract: An intake system of an engine including an intake manifold, which includes an intake air introducing pipe and a plurality of independent intake pipes, is provided. Each of the independent intake pipes has an arc shape surrounding the intake air introducing pipe from outside with a space. A first independent intake pipe is curved more in the cylinder lined-up direction than a second. From the side in the cylinder lined-up direction, the arc shape of the second independent intake pipe is more distant from the intake air introducing pipe. To a first member constituting part of the intake air introducing pipe, a second member is joined to form the arc shape of the first independent intake pipe. A third member disposed radially outward from the first member is joined to the second member to form the arc shape of the second independent intake pipe.

Abstract: Provided is a semiconductor device including: a first trench contact portion provided to an inside of a contact region; a second trench contact portion provided to an inside of an emitter region; a first plug portion of a second conductivity type, which is provided in contact with a lower end of the first trench contact portion and has a higher concentration than a base region; and a second plug portion of a second conductivity type, which is provided in contact with a lower end of the second trench contact portion, is provided to a position closer to a lower surface than the first plug portion, and has a higher concentration than the base region.