Abstract: Disclosed herein is a coil component that includes a substrate, and a planar spiral coil pattern provided on the surface of the substrate. The coil pattern has a circularity higher in its inner shape than in its outer shape.

Abstract: The switching module has, mounted on a substrate thereof, a MOSFET and a driver circuit for applying drive voltage to a gate electrode of the MOSFET. In the switching module according to the present invention, the driver circuit is electrically connected to the MOSFET via a damping adjustment element and a bonding wire between the gate electrode and the driver circuit.

Abstract: A semiconductor device includes: a semiconductor substrate including a device region and a dicing line region surrounding the device region; a front surface electrode provided on a front surface of the semiconductor substrate in the device region; a back surface electrode made of a metal and provided on a back surface opposite the front surface of the semiconductor substrate; a first silicide layer provided between the back surface and the back surface electrode in the device region; and a second silicide layer provided between the back surface and the back surface electrode in the dicing line region, wherein contact resistance between the first silicide layer and the semiconductor substrate is lower than contact resistance between the second silicide layer and the semiconductor substrate, and hardness of the second silicide layer is lower than hardness of the first silicide layer.

Abstract: This high frequency amplifier includes: an amplifier that amplifies a high frequency signal; and an impedance adjustment unit that adjusts impedance relative to a high frequency wave as seen from the amplifier to a load side. The impedance adjustment unit includes a distributed constant circuit and a lumped constant circuit. The distributed constant circuit includes a transmission line that resonates with harmonics, and the lumped constant circuit includes a resonance circuit that resonates with a fundamental wave and harmonics other than the harmonics of the distributed constant circuit. One end of the transmission line of the distributed constant circuit is an open end, and is constituted from an open stub provided with a line length that resonates with various harmonics. The high frequency amplifier carries out filtering by adjusting the impedance of the fundamental wave and the harmonics without being provided with a fundamental wave 1/4 wavelength transmission line.

Abstract: A near-infrared fluorescent material that exhibits good dispersibility in a resin is provided, a resin composition containing the near-infrared fluorescent material is provided, and a molded article formed from the resin composition is provided. More specifically, a powdered fluorochrome composition is composed of a near-infrared fluorescent material composed of one or more compounds selected from the group consisting of compounds represented by any of general formulae (I1) to (I4), and a molded article is an article formed from the resin composition.

Abstract: An information processing device includes a processor configured to: determine, by using an anomaly detection model, whether an anomaly has occurred in a first system; when determination is made that the anomaly has occurred in the first system, presume whether the anomaly is influenced by a failure in an external system connected to the first system; and when presumption is made that the determined anomaly is influenced by the failure in the external system, update the anomaly detection model to reduce influence of the failure in the external system.

Abstract: Disclosed herein is a coil component that includes a coil pattern provided on the substrate. The outer and inner shapes of the coil pattern are both larger in width in a first direction than a second direction. The outer shape of the coil pattern has a pair of first outer shape sections and a second outer shape section positioned between the pair of first outer shape sections in the first direction and having a width in the second direction larger than that of the first outer shape sections. The inner shape of the coil pattern has a pair of first inner shape sections and a second inner shape section positioned between the pair of first inner shape sections in the first direction and having a width in the second direction larger than that of the first inner shape sections.

Abstract: A nonreciprocal circuit element according to the present invention comprises a nonreciprocal unit provided with a ferrite, an electromagnet that applies a DC magnetic field to the ferrite, and conductors that are arranged so as to intersect with each other in an insulated state with respect to the ferrite and that have a plurality of shorted terminal ends. The nonreciprocal circuit element comprises reciprocal circuit units and a DC power supply control unit controlling DC current to be supplied to the electromagnet. The DC power supply control unit controls the DC current to be supplied to the electromagnet and controls a DC magnetic field to be applied to the electromagnet. By the control of the DC magnetic field, the center frequency of frequency characteristics of the nonreciprocal circuit element is matched with the frequency of a high-frequency signal, and insertion loss of the nonreciprocal circuit element is reduced.

Abstract: A storage device stores a state transition model in which a first state transition probability (state transition probability function ?), which indicates the probability that a prediction subject will transition from a first state s to a second state s? after a first time (?t) has elapsed, is expressed by a linear combination of weighted basis functions (model storage unit). A computation device calculates a second state transition probability (attenuation-type state transition probability function D), which indicates the probability that the prediction subject will transition from the first state s to the second state s? after a second time (?t×?) has elapsed, by means of a product-sum computation of a weight matrix ? representing a matrix the elements of which are the respective weights of the weighted basis functions (future state prediction computation unit).

Abstract: In a semiconductor device according to the present disclosure, a semiconductor substrate includes: a transistor region in which a transistor is formed; a plurality of diode regions in which a diode is formed; and a terminal region around a cell region covering the transistor region and the plurality of diode regions. The transistor region includes: a second transistor region contacting the terminal region at least partially; and a first transistor region arranged in a region other than the second transistor region and between the plurality of diode regions. In a plan view, the first transistor region has a first width and each of the plurality of diode regions has a second width that is uniform in the first direction. The second transistor region has a third width in the first direction that is smaller than the first width of the first transistor region.

Abstract: A semiconductor device includes a semiconductor substrate, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a diode trench gate, and an electrode layer. The first semiconductor layer is provided as a surface layer on the upper surface side of the semiconductor substrate. The second semiconductor layer is provided below the first semiconductor layer. The diode trench gate includes a diode trench insulation film formed along, out of the inner wall of the trench, a lower side wall and a bottom that are located below an upper side wall located on the upper end side of the trench. The diode trench gate includes a diode trench electrode provided inside the trench. The electrode layer covers the upper side wall of the trench. The first semiconductor layer is in contact with the electrode layer on the upper side wall of the trench.

Abstract: A semiconductor device includes a semiconductor substrate, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a diode trench gate, and an electrode layer. The first semiconductor layer is provided as a surface layer on the upper surface side of the semiconductor substrate. The second semiconductor layer is provided below the first semiconductor layer. The diode trench gate includes a diode trench insulation film formed along, out of the inner wall of the trench, a lower side wall and a bottom that are located below an upper side wall located on the upper end side of the trench. The diode trench gate includes a diode trench electrode provided inside the trench. The electrode layer covers the upper side wall of the trench. The first semiconductor layer is in contact with the electrode layer on the upper side wall of the trench.

Abstract: Disclosed herein is a coil component that includes a substrate having a first surface, and first and second coil patterns coaxially formed on the first surface of the substrate and electrically isolated from each other. The first coil pattern has a plurality of turns including a first turn and a second turn. A predetermined turn of the second coil pattern is disposed between the first and second turns of the first coil pattern.

Abstract: An object of the present invention is to provide a pigment composition and an ink (in particular, a waterborne ink) that can reduce a viscosity increase over time when an azo lake pigment is used as a pigment and also have excellent color strength and gloss in printed products. The pigment composition according to the present invention includes a divalent metal lake azo pigment, and 0.1% by weight to 20% by weight of a divalent metal salt of a mono- or di-carboxylic acid compound. The divalent metal of the divalent metal salt is preferably an alkaline earth metal ion. The mono- or di-carboxylic acid compound is preferably a mono- or di-carboxylic acid compound having a carbon number of 4 to 20.

Abstract: An object of the present invention is to provide a pigment composition and an ink (in particular, a waterborne ink) that can reduce a viscosity increase over time when an azo lake pigment is used as a pigment and also have excellent color strength and gloss in printed products. The pigment composition according to the present invention includes a divalent metal lake azo pigment, and 0.1% by weight to 20% by weight of a divalent metal salt of a mono- or di-carboxylic acid compound. The divalent metal of the divalent metal salt is preferably an alkaline earth metal ion. The mono- or di-carboxylic acid compound is preferably a mono- or di-carboxylic acid compound having a carbon number of 4 to 20.

Abstract: The switching module has, mounted on a substrate thereof, a MOSFET and a driver circuit for applying drive voltage to a gate electrode of the MOSFET. In the switching module according to the present invention, the driver circuit is electrically connected to the MOSFET via a damping adjustment element and a bonding wire between the gate electrode and the driver circuit.

Abstract: An object that is to be achieved by the present invention is to provide an azo pigment having excellent transparency, suitable dispersibility, and a low viscosity, an ink, and the like. An azo pigment according to the present invention has a zeta potential of ?80 to ?30 mV in isopropanol (IPA). The content of a metal element in the azo pigment is preferably 0.05 to 2.00 parts by mass relative to 100 parts by mass of the azo pigment. The metal element is preferably an iron element. The ratio (Fe/C) of the concentration Fe (atomic %) of an iron element in the surfaces of particles of the azo pigment to the concentration C (atomic %) of a carbon element in the surfaces of the particles of the azo pigment which are determined by X-ray photoelectron spectroscopy is preferably 0.20 or less.

Abstract: A biological information measurement device includes a sensor unit that detects predetermined biological information related to an organ of a living body, an A/D conversion unit that converts a measurement signal output from the sensor unit into a digital signal, a storage unit that stores information including a digital signal related to the measurement signal output from the A/D conversion unit, an analysis processing unit that determines presence or absence of a suspicion of an abnormality in the organ by analyzing the digital signal, and a measurement control unit that changes a sampling frequency related to A/D conversion of the measurement signal under a predetermined condition when the analysis processing unit has determined that a suspicion of an abnormality is present in the organ.

Abstract: To reduce the load required to press-fit a nut into a plate material, the nut includes a base part 2 provided with a female screw 18, a cylindrical protrusion part 3 protruding from one surface of the base part and a plurality of foot parts 4 protruding from an outer peripheral surface side of the protrusion part. An end of the respective foot parts closer to the protrusion part is formed so that a width gradually expands from a tip end side toward a protrusion part side, and that both outer sides of the end are arc-shaped in plan view.

Abstract: A semiconductor device according to the present disclosure includes: a first conductivity-type silicon substrate including a cell part and a termination part surrounding the cell part in plan view; a first conductivity-type emitter layer provided on a front surface of the silicon substrate in the cell part; a second conductivity-type collector layer provided on a back surface of the silicon substrate in the cell part; a first conductivity-type drift layer provided between the emitter layer and the collector layer; a trench gate provided to reach the drift layer from a front surface of the emitter layer; and a second conductivity-type well layer provided on the front surface of the silicon substrate in the termination part. Vacancies included in a crystal defect in the cell part are less than vacancies included in a crystal defect in the termination part.