Patents by Inventor Tal Cheng Chua

Tal Cheng Chua has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma method and apparatus for processing a substrate
    Patent number: 6831021
    Abstract: Embodiments of the invention generally provide a method of forming a nitride gate dielectric layer. The method includes generating a nitrogen-containing plasma in a processing chamber via introduction of a nitrogen-containing processing gas into the processing chamber and the application of an ionizing energy to the processing gas, and pulsing the ionizing energy to maintain a mean temperature of electrons in the nitrogen-containing plasma of less than about 0.7 eV.
    Type: Grant
    Filed: June 12, 2003
    Date of Patent: December 14, 2004
    Assignee: Applied Materials, Inc.
    Inventors: Tal Cheng Chua, Philip Allan Kraus, John Holland