Abstract: A method for quantifying sensitivity of metrology to process variation including performing metrology, by a metrology tool, on at least one metrology target located at at least one site on a semiconductor wafer, thereby generating a metrology landscape, and calculating a sensitivity metric directly based on the metrology landscape, the sensitivity metric quantifying a sensitivity of the metrology landscape to process variation involved in manufacture of the semiconductor wafer.

Abstract: A transducer apparatus for delivering tumor treating fields to a subject's body, the transducer apparatus including: an array of electrode elements electrically coupled to each other, the array including all electrode elements present on the transducer apparatus, the array configured to be positioned over the subject's body with a face facing the subject's body; wherein, when viewed from a direction perpendicular to the face of the array, an outer perimeter of the array substantially tracing the electrode elements of the array has a rounded convex shape; a number of the electrode elements of the array are peripheral electrode elements defining the outer perimeter of the array, the peripheral electrode elements substantially surrounding any other electrode elements of the array; and wherein for each peripheral electrode element, at least a portion of a length of a perimeter of the peripheral electrode element is touching the outer perimeter of the array.

Abstract: A method for determining a location of a transducer on a subject's body for applying tumor treating fields. The method comprises determining a near-surface portion of a tumor in the subject's body, the near-surface portion of the tumor closer to a surface of the subject's body than other portions of the tumor; determining a near-tumor position on the subject's body, the near-tumor position on the subject's body closer to the near-surface portion of the tumor than other positions of the subject's body; determining an outer perimeter of the transducer, the transducer comprising a plurality of electrode elements electrically coupled to each other, the plurality of electrode elements of the transducer being located within the outer perimeter; and identifying a portion of the outer perimeter of the transducer to be located substantially at the near-tumor position on the subject's body.

Abstract: A method for quantifying sensitivity of metrology to process variation including performing metrology, by a metrology tool, on at least one metrology target located at at least one site on a semiconductor wafer, thereby generating a metrology landscape, and calculating a sensitivity metric directly based on the metrology landscape, the sensitivity metric quantifying a sensitivity of the metrology landscape to process variation involved in manufacture of the semiconductor wafer.

Abstract: A method of applying tumor treating fields to a region of interest of a subject's body corresponding to a tumor, the method including: alternately applying to the region of interest a first electric field between a first pair of locations of the subject's body and a second electric field between a second pair of locations of the subject's body; detecting a change in the region of interest of the subject's body; ceasing applying the first and second electric fields; selecting, based on the detected change, a third pair of locations of the subject's body and a fourth pair of locations of the subject's body, the third and fourth pairs of locations being different than the first and second pairs of locations; and alternately applying to the region of interest a third electric field between the third pair of locations and a fourth electric field between the fourth pair of locations.

Abstract: A transducer apparatus for delivering tumor treating fields to a subject's body, the transducer apparatus including: an array of electrode elements comprising all electrode elements present on the transducer apparatus, the array configured to be positioned over the subject's body with a face thereof facing the subject's body; when viewed from a direction perpendicular to the face, a number of electrode elements of the array are peripheral electrode elements defining an outer perimeter, the peripheral electrode elements substantially surrounding all other electrode elements; for each pair of adjacent peripheral electrode elements, a distance between the pair is not more than 25% greater than a distance between any other pair of adjacent peripheral electrode elements; and for each peripheral electrode element, an angle formed between the peripheral electrode element and its two adjacent peripheral electrode elements is greater than 90 and less than 180 degrees and facing interior to the array.

Abstract: A computer-implemented method of determining locations of transducers on a subject's body for applying tumor treating fields, the method including: selecting a plurality of pairs of locations on the subject's body, each pair of locations having a first location to locate a first transducer and a second location to locate a second transducer; obtaining, for each pair of locations, a voltage measurement and a current measurement for an electric field induced between the first transducer and the second transducer, the induced electric field passing through a tumor of the subject's body; calculating, for each pair of locations, a resistivity based on the voltage measurement and the current measurement; and selecting and outputting one or more recommended pairs of locations based on the calculated resistivities.

Abstract: An overlay metrology system includes a controller to receive, from an overlay metrology tool, overlay measurements on multiple sets of overlay targets on a sample with a range of values of a measurement parameter, where a particular set of overlay targets includes overlay targets having one of two or more overlay target designs. The controller may further determine scaling metric values for at least some of the overlay targets, where the scaling metric for a particular overlay target is based on a standard deviation of the overlay measurements of the corresponding set of overlay targets. The controller may further determine a variability of the scaling metric values for each of the two or more sets of overlay targets. The controller may further select, as an output overlay target design, one of the two or more overlay target designs having a smallest scaling metric variability.

Abstract: A computer-implemented method to determine placement of transducers on a subject's body, the method including: selecting a plurality of intersecting line segment pairs on an image of the subject's body, each of the line segment pairs intersecting in a region of the image corresponding to a tumor in the subject's body, each of the line segment pairs corresponding to locations to place the transducers on the subject's body; determining a pair value for each of the intersecting line segment pairs, each pair value based on a length of each line segment of the corresponding intersecting line segment pair; selecting one or more intersecting line segment pairs based on the pair values to obtain one or more selected intersecting line segment pairs; and outputting the locations to place the transducers on the subject's body corresponding to the one or more selected intersecting line segment pairs.

Abstract: Systems, metrology modules and methods are provided, which identify, per wafer site, components of residuals from measurement of metrology metric(s), and optimize measurement parameters for each site, according to the identified residuals' components. Certain embodiments utilize metric landscapes to identify sensitive sites and/or to identify sites exhibiting highest accuracy, and corresponding metrics may be combined over the wafer to further enhance the metrology performance. Zonal analysis may be used to reduce the systematic errors, and disclosed per-site analysis may be used to further reduce the non-systematic error components, and relate the remaining residuals components to process variation over the wafer.

Abstract: A device and method for expediting spectral measurement in metrological activities during semiconductor device fabrication through interferometric spectroscopy of white light illumination during calibration, overlay, and recipe creation.

Abstract: A device and method for expediting spectral measurement in metrological activities during semiconductor device fabrication through interferometric spectroscopy of white light illumination during calibration, overlay, and recipe creation.

Abstract: Metrology methods are provided for deriving metrology measurement parameter value(s) by identifying the value(s) in which the corresponding metrology measurement signal(s) have minimal amplitude asymmetry. Selecting the measurement parameter values as disclosed reduces significantly the measurement inaccuracy. For example, wavelength values and/or focus values may be detected to indicate minimal amplitude asymmetry and/or minimal phase asymmetry. In certain embodiments, wavelength values which provide minimal amplitude asymmetry also provide minimal signal sensitivity to focus. Developed metrics may be further used to indicate process robustness across wafers and lots. In some embodiments, imaging accuracy may be enhanced by through-focus landscaping of the amplitude asymmetry and detection of parameters values with minimal amplitude asymmetry.

Abstract: Systems, metrology modules and methods are provided, which identify, per wafer site, components of residuals from measurement of metrology metric(s), and optimize measurement parameters for each site, according to the identified residuals' components. Certain embodiments utilize metric landscapes to identify sensitive sites and/or to identify sites exhibiting highest accuracy, and corresponding metrics may be combined over the wafer to further enhance the metrology performance. Zonal analysis may be used to reduce the systematic errors, and disclosed per-site analysis may be used to further reduce the non-systematic error components, and relate the remaining residuals components to process variation over the wafer.

Abstract: Methods are provided for deriving a partially continuous dependency of metrology metric(s) on recipe parameter(s), analyzing the derived dependency, determining a metrology recipe according to the analysis, and conducting metrology measurement(s) according to the determined recipe. The dependency may be analyzed in form of a landscape such as a sensitivity landscape in which regions of low sensitivity and/or points or contours of low or zero inaccuracy are detected, analytically, numerically or experimentally, and used to configure parameters of measurement, hardware and targets to achieve high measurement accuracy. Process variation is analyzed in terms of its effects on the sensitivity landscape, and these effects are used to characterize the process variation further, to optimize the measurements and make the metrology both more robust to inaccuracy sources and more flexible with respect to different targets on the wafer and available measurement conditions.

Abstract: A device and method for expediting spectral measurement in metrological activities during semiconductor device fabrication through interferometric spectroscopy of white light illumination during calibration, overlay, and recipe creation.

Abstract: An overlay metrology system includes a controller to receive, from an overlay metrology tool, overlay measurements on multiple sets of overlay targets on a sample with a range of values of a measurement parameter, where a particular set of overlay targets includes overlay targets having one of two or more overlay target designs. The controller may further determine scaling metric values for at least some of the overlay targets, where the scaling metric for a particular overlay target is based on a standard deviation of the overlay measurements of the corresponding set of overlay targets. The controller may further determine a variability of the scaling metric values for each of the two or more sets of overlay targets. The controller may further select, as an output overlay target design, one of the two or more overlay target designs having a smallest scaling metric variability.

Abstract: A design of a diffraction limited, microscope objective with a curved image plane is presented. The described microscope objective is used with a two-degree-of-freedom galvanometer scanning system including two galvo mirrors with a relay step between the mirrors to enable scanning in both directions over the full, curved field for creating custom refractive structures across the 6.5 mm optical zone of contact lenses using femtosecond micro-modification.

Abstract: Metrology methods and targets are provided, for estimating inter-cell process variation by deriving, from overlay measurements of at least three target cells having different designed misalignments, a dependency of a measured inaccuracy on the designed misalignments (each designed misalignment is between at least two overlapping periodic structures in the respective target cell). Inaccuracies which are related to the designed misalignments are reduced, process variation sources are detected and targets and measurement algorithms are optimized according to the derived dependency.

Abstract: Systems and method are presented for identifying process variations during manufacture of products such as semiconductor wafers. At a predetermined stage during manufacture of a first products, images of an area of the first product are obtained using different values of at least one imaging parameter. The images are then analyzed to generate a first contrast signature for said first product indicating variations of contrast with said at least one imaging parameter. At the same predetermined stage during manufacture of a second product, images of an area of said second product are obtained corresponding to said area of said first product using different values of said at least one imaging parameter. The images are analyzed to generate a second contrast signature for said second product indicating variations of contrast with said at least one imaging parameter.