Abstract: Systems and methods for improving NAND flash memory yields by identifying memory blocks with benign word line defects. Memory blocks including word line defects may be classified as incomplete memory blocks and may be used for storing data fragments. A data fragment may correspond with data written into memory cells associated with one or more contiguous word lines within a memory block that does not include a bad word line. In some cases, firmware associated with a NAND flash memory device may identify one or more data fragments based on the location of bad word lines within a memory block. A word line defect may be considered a benign defect if the defect does not prevent memory cells connected to other word lines within a memory block from being programmed and/or read reliably.

Abstract: A non-volatile memory system is formed a plurality of memory banks and a controller, where the controller has an auxiliary memory interface for use with an additionally non-volatile memory bank, where the additional memory bank and interface are used for metadata, such as logical to physical translation data. The other banks are used for user data. In an exemplary embodiment, a non-volatile memory could include a controller and (N+1) NAND flash memories, where N of these memories would store user data, but the remaining memory with its own controller interface would be dedicated to the storage of metadata. This allows for the metadata to be kept in non-volatile memory, but still quite readily accessible relative to the typical paging/overlay arrangement for metadata that is typically used in many non-volatile memory system.

Abstract: Methods for improving NAND flash memory yields by identifying memory blocks with benign word line defects are described. Memory blocks including word line defects may be classified as incomplete memory blocks and may be used for storing data fragments. A data fragment may correspond with data written into memory cells associated with one or more contiguous word lines within a memory block that does not include a bad word line. In some cases, firmware associated with a NAND flash memory device may identify one or more data fragments based on the location of bad word lines within a memory block. A word line defect may be considered a benign defect if the defect does not prevent memory cells connected to other word lines within a memory block from being programmed and/or read reliably.

Abstract: A non-volatile memory system is formed a plurality of memory banks and a controller, where the controller has an auxiliary memory interface for use with an additionally non-volatile memory bank, where the additional memory bank and interface are used for metadata, such as logical to physical translation data. The other banks are used for user data. In an exemplary embodiment, a non-volatile memory could include a controller and (N+1) NAND flash memories, where N of these memories would store user data, but the remaining memory with its own controller interface would be dedicated to the storage of metadata. This allows for the metadata to be kept in non-volatile memory, but still quite readily accessible relative to the typical paging/overlay arrangement for metadata that is typically used in many non-volatile memory system.