Abstract: An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.

Abstract: A method of changing layout of a semiconductor device includes: a step of preparing a physical layout representative of a layout of circuit constituents of a semiconductor device; a step of detecting a contradictory area in the physical layout not conforming with predetermined design rule; a step of converting the physical layout into a graphical representation by extracting nodes such as a transistor and a contact and branches interconnecting nodes from the physical layout; a step of solving the contradictory area in the graphical representation by inserting a new vector into a corresponding branch; and a step of converting the final graphical representation into a new physical representation. The method can automatically solve contradictory areas of a physical layout of a semiconductor device.

Abstract: An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.

Abstract: A phase shifter arranging method selectively arranges phase shifters on aperture patterns of a photomask so that a phase difference of .pi.radians occurs between lights transmitted through mutually adjacent aperture patterns of the photomask. The phase shifter arranging method is computer-implemented and comprises the steps of (a) extracting connections of nodes via branch as a net, where each aperture pattern is taken as a node, and mutually adjacent aperture patterns having an interval less than or equal to a predetermined value D0 are taken as nodes connected via a branch, (b) dividing the net into an open net and a closed net which are independent of each other, where the open net has no closed loop and the closed loop is other of the open loop, and (c) selectively arranging the phase shifters with respect to each of mutually independent closed nets.

Abstract: A method of correcting proximity effect of a pattern formed on an object is disclosed where the pattern on the object is formed by exposing a beam pattern which is created based on pattern data expressing the pattern. The method includes the steps of calculating an ideal beam-intensity profile of the beam pattern which creates the pattern on the object in a desired form, the ideal beam-intensity profile having gradual changes of a beam intensity, dividing edges of the pattern into line segments in the pattern data, the line segments being provided with displacement codes which represent at least one of first displacements of the line segments in normal directions thereof and second displacements of the line segments in extending directions of the line segments, and changing the displacement codes to displace the line segments such that a beam-intensity profile obtained from the pattern data becomes closer to the ideal beam-intensity profile.

Abstract: A mask for forming a desired pattern on the image plane is divided into a number of cell areas. Each cell is assigned a uniform characteristic. Each cell area is assigned a particular light transmission characteristic to form a starting pattern which may be the desired target pattern itself. The light transmission characteristic of each cell area is changed randomly. The light intensity distribution is simulated to select only the patterns having a good performance. Such characteristic change is continued until the inheritance operation is converged and a final pattern is obtained. This final pattern is used as the mask pattern. The above process may also be applied to determining the shape of an aperture stop and a light source.

Abstract: An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.

Abstract: A pattern exposing method forms a predetermined resist pattern on a substrate by exposing a first resist layer which is formed on the substrate using a first reticle which includes a first pattern for exposing a first corresponding pattern on the first resist layer by use of a phase shift of light transmitted through the first reticle, developing the exposed first resist layer, exposing a second resist layer which is formed on the entire surface of the substrate, including a top of the first resist layer, using a second reticle which has a second pattern for exposing a second corresponding pattern on the second resist layer by use of light transmitted through the second reticle, where the second corresponding pattern overlaps at least a part of the first corresponding pattern, and developing the second resist layer so that a part of the first corresponding pattern is removed by the second corresponding pattern and the predetermined resist pattern is formed.

Abstract: An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.

Abstract: A mask for forming a desired pattern on the image plane is divided into a number of dell areas. Each cell is assigned a uniform characteristic. Each cell area is assigned a particular light transmission characteristic to form a starting pattern which may be the desired target pattern itself. The light transmission characteristic of each cell area is changed randomly. The light intensity distribution is simulated to select only the patterns having a good performance. Such characteristic change is continued until the inheritance operation is converged and a final, pattern is obtained. This final pattern is used as the mask pattern. The above process may also be applied to determining the shape of an aperture stop and a light source.

Abstract: A pattern exposing method forms a predetermined resist pattern on a substrate by exposing a first resist layer which is formed on the substrate using a first reticle which includes a first pattern for exposing a first corresponding pattern on the first resist layer by use of a phase shift of light transmitted through the first reticle, developing the exposed first resist layer, exposing a second resist layer which is formed on the entire surface of the substrate, including a top of the first resist layer, using a second reticle which has a second pattern for exposing a second corresponding pattern on the second resist layer by use of light transmitted through the second reticle, where the second corresponding pattern overlaps at least a part of the first corresponding pattern, and developing the second resist layer so that a part of the first corresponding pattern is removed by the second corresponding pattern and the predetermined resist pattern is formed.