Patents by Inventor Tamae Morikawa

Tamae Morikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power storage element including positive electrode and negative electrode in the same plane over substrate and power storage device
    Patent number: 9646771
    Abstract: Disclosed is a power storage element including a positive electrode current collector layer and a negative electrode current collector layer which are arranged on the same plane. The power storage element further includes a positive electrode active material layer over the positive electrode current collector layer and a negative electrode active material layer over the negative electrode current collector layer. An electrolyte layer in contact with at least the positive electrode active material layer and the negative electrode active material layer is provided. The electrolyte layer may be a solid electrolyte layer.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: May 9, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazutaka Kuriki, Ryota Tajima, Tamae Morikawa, Junpei Momo
  • Power storage element, manufacturing method thereof, and power storage device
    Patent number: 9070950
    Abstract: Disclosed is a power storage element including a positive electrode current collector layer and a negative electrode current collector layer which are arranged on the same plane and can be formed through a simple process. The power storage element further includes a positive electrode active material layer on the positive electrode current collector layer; a negative electrode active material layer on the negative electrode current collector layer; and a solid electrolyte layer in contact with at least the positive electrode active material layer and the negative electrode active material layer. The positive electrode active material layer and the negative electrode active material layer are formed by oxidation treatment.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: June 30, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazutaka Kuriki, Ryota Tajima, Tamae Morikawa
  • POWER STORAGE ELEMENT, MANUFACTURING METHOD THEREOF, AND POWER STORAGE DEVICE
    Publication number: 20130252064
    Abstract: Disclosed is a power storage element including a positive electrode current collector layer and a negative electrode current collector layer which are arranged on the same plane and can be formed through a simple process. The power storage element further includes a positive electrode active material layer on the positive electrode current collector layer; a negative electrode active material layer on the negative electrode current collector layer; and a solid electrolyte layer in contact with at least the positive electrode active material layer and the negative electrode active material layer. The positive electrode active material layer and the negative electrode active material layer are formed by oxidation treatment.
    Type: Application
    Filed: March 12, 2013
    Publication date: September 26, 2013
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazutaka Kuriki, Ryota Tajima, Tamae Morikawa
  • POWER STORAGE ELEMENT, MANUFACTURING METHOD THEREOF, AND POWER STORAGE DEVICE
    Publication number: 20130249054
    Abstract: Disclosed is a power storage element including a positive electrode current collector layer and a negative electrode current collector layer which are arranged on the same plane. The power storage element further includes a positive electrode active material layer over the positive electrode current collector layer and a negative electrode active material layer over the negative electrode current collector layer. An electrolyte layer in contact with at least the positive electrode active material layer and the negative electrode active material layer is provided. The electrolyte layer may be a solid electrolyte layer.
    Type: Application
    Filed: March 12, 2013
    Publication date: September 26, 2013
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Kazutaka Kuriki, Ryota Tajima, Tamae Morikawa, Junpei Momo
  • ELECTRODE FOR ENERGY STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20110254128
    Abstract: An electrode for an energy storage device with less deterioration due to charge and discharge, and a method for manufacturing thereof are provided. Further, an energy storage device having large capacity and high endurance can be provided. In an electrode of an energy storage device in which an active material is formed over a current collector, the surface of the active material is formed of a crystalline semiconductor film having a {110} crystal plane. The crystalline semiconductor film having a {110} crystal plane may be a crystalline silicon film containing a metal element which reacts with silicon to form a silicide. Alternatively, the crystalline semiconductor film having a {110} crystal plane may be a crystalline semiconductor film containing silicon as its main component and also containing germanium and a metal element which reacts with silicon to form a silicide.
    Type: Application
    Filed: April 12, 2011
    Publication date: October 20, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Kazutaka Kuriki, Tamae Morikawa, Satoshi Murakami, Shunpei Yamazaki