Patents by Inventor Tamae Moriwaka

Tamae Moriwaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230371286
    Abstract: [Problem] To provide a semiconductor device suitable for miniaturization. To provide a highly reliable semiconductor device. To provide a semiconductor device with improved operating speed. [Solving Means] A semiconductor device including a memory cell including first to cth (c is a natural number of 2 or more) sub memory cells, wherein: the jth sub memory cell includes a first transistor, a second transistor, and a capacitor; a first semiconductor layer included in the first transistor and a second semiconductor layer included in the second transistor include an oxide semiconductor; one of terminals of the capacitor is electrically connected to a gate electrode included in the second transistor; the gate electrode included in the second transistor is electrically connected to one of a source electrode and a drain electrode which are included in the first transistor; and when j?2, the jth sub memory cell is arranged over the j?1th sub memory cell.
    Type: Application
    Filed: July 24, 2023
    Publication date: November 16, 2023
    Inventors: Tomoaki ATSUMI, Shuhei NAGATSUKA, Tamae MORIWAKA, Yuta ENDO
  • Publication number: 20230361271
    Abstract: A secondary battery in which graphite that is an active material can occlude and release lithium efficiently is provided. Further, a highly reliable secondary battery in which the amount of lithium inserted and extracted into/from graphite that is an active material is prevented from varying is provided. The secondary battery includes a negative electrode including a current collector and graphite provided over the current collector, and a positive electrode. The graphite includes a plurality of graphene layers. Surfaces of the plurality of graphene layers are provided substantially along the direction of an electric field generated between the positive electrode and the negative electrode.
    Type: Application
    Filed: July 5, 2023
    Publication date: November 9, 2023
    Inventors: Shunpei YAMAZAKI, Teppei OGUNI, Tamae MORIWAKA, Junpei MOMO, Ryota TAJIMA, Nobuhiro INOUE
  • Patent number: 11751409
    Abstract: To provide a semiconductor device suitable for miniaturization. To provide a highly reliable semiconductor device. To provide a semiconductor device with improved operating speed. A semiconductor device including a memory cell including first to cth (c is a natural number of 2 or more) sub memory cells, wherein: the jth sub memory cell includes a first transistor, a second transistor, and a capacitor; a first semiconductor layer included in the first transistor and a second semiconductor layer included in the second transistor include an oxide semiconductor; one of terminals of the capacitor is electrically connected to a gate electrode included in the second transistor; the gate electrode included in the second transistor is electrically connected to one of a source electrode and a drain electrode which are included in the first transistor; and when j?2, the jth sub memory cell is arranged over the j-lth sub memory cell.
    Type: Grant
    Filed: September 3, 2021
    Date of Patent: September 5, 2023
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tomoaki Atsumi, Shuhei Nagatsuka, Tamae Moriwaka, Yuta Endo
  • Patent number: 11699782
    Abstract: A secondary battery in which graphite that is an active material can occlude and release lithium efficiently is provided. Further, a highly reliable secondary battery in which the amount of lithium inserted and extracted into/from graphite that is an active material is prevented from varying is provided. The secondary battery includes a negative electrode including a current collector and graphite provided over the current collector, and a positive electrode. The graphite includes a plurality of graphene layers. Surfaces of the plurality of graphene layers are provided substantially along the direction of an electric field generated between the positive electrode and the negative electrode.
    Type: Grant
    Filed: June 18, 2020
    Date of Patent: July 11, 2023
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Teppei Oguni, Tamae Moriwaka, Junpei Momo, Ryota Tajima, Nobuhiro Inoue
  • Patent number: 11587959
    Abstract: Disclosed is a power storage element including a positive electrode current collector layer and a negative electrode current collector layer which are arranged on the same plane and can be formed through a simple process. The power storage element further includes a positive electrode active material layer on the positive electrode current collector layer; a negative electrode active material layer on the negative electrode current collector layer; and a solid electrolyte layer in contact with at least the positive electrode active material layer and the negative electrode active material layer. The positive electrode active material layer and the negative electrode active material layer are formed by oxidation treatment.
    Type: Grant
    Filed: May 25, 2021
    Date of Patent: February 21, 2023
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazutaka Kuriki, Ryota Tajima, Tamae Moriwaka
  • Publication number: 20220263119
    Abstract: A lithium ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer over the positive electrode current collector. The positive electrode active material layer includes a plurality of lithium-containing composite oxides each of which is expressed by LiMPO4 (M is one or more of Fe (II), Mn (II), Co (II), and Ni (II)) that is a general formula. The lithium-containing composite oxide is a flat single crystal particle in which the length in the b-axis direction is shorter than each of the lengths in the a-axis direction and the c-axis direction. The lithium-containing composite oxide is provided over the positive electrode current collector so that the b-axis of the single crystal particle intersects with the surface of the positive electrode current collector.
    Type: Application
    Filed: May 4, 2022
    Publication date: August 18, 2022
    Inventors: Tomoya FUTAMURA, Tamae MORIWAKA, Takahiro KAWAKAMI, Junpei MOMO, Nobuhiro INOUE
  • Patent number: 11335945
    Abstract: A lithium ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer over the positive electrode current collector. The positive electrode active material layer includes a plurality of lithium-containing composite oxides each of which is expressed by LiMPO4 (M is one or more of Fe (II), Mn (II), Co (II), and Ni (II)) that is a general formula. The lithium-containing composite oxide is a flat single crystal particle in which the length in the b-axis direction is shorter than each of the lengths in the a-axis direction and the c-axis direction. The lithium-containing composite oxide is provided over the positive electrode current collector so that the b-axis of the single crystal particle intersects with the surface of the positive electrode current collector.
    Type: Grant
    Filed: February 14, 2020
    Date of Patent: May 17, 2022
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Tomoya Futamura, Tamae Moriwaka, Takahiro Kawakami, Junpei Momo, Nobuhiro Inoue
  • Publication number: 20210398988
    Abstract: [Problem] To provide a semiconductor device suitable for miniaturization. To provide a highly reliable semiconductor device. To provide a semiconductor device with improved operating speed. [Solving Means] A semiconductor device including a memory cell including first to cth (c is a natural number of 2 or more) sub memory cells, wherein: the jth sub memory cell includes a first transistor, a second transistor, and a capacitor; a first semiconductor layer included in the first transistor and a second semiconductor layer included in the second transistor include an oxide semiconductor; one of terminals of the capacitor is electrically connected to a gate electrode included in the second transistor; the gate electrode included in the second transistor is electrically connected to one of a source electrode and a drain electrode which are included in the first transistor; and when j?2, the jth sub memory cell is arranged over the j-lth sub memory cell.
    Type: Application
    Filed: September 3, 2021
    Publication date: December 23, 2021
    Inventors: Tomoaki ATSUMI, Shuhei NAGATSUKA, Tamae MORIWAKA, Yuta ENDO
  • Publication number: 20210280616
    Abstract: Disclosed is a power storage element including a positive electrode current collector layer and a negative electrode current collector layer which are arranged on the same plane and can be formed through a simple process. The power storage element further includes a positive electrode active material layer on the positive electrode current collector layer; a negative electrode active material layer on the negative electrode current collector layer; and a solid electrolyte layer in contact with at least the positive electrode active material layer and the negative electrode active material layer. The positive electrode active material layer and the negative electrode active material layer are formed by oxidation treatment.
    Type: Application
    Filed: May 25, 2021
    Publication date: September 9, 2021
    Inventors: Kazutaka KURIKI, Ryota TAJIMA, Tamae MORIWAKA
  • Patent number: 11114449
    Abstract: [Problem] To provide a semiconductor device suitable for miniaturization. To provide a highly reliable semiconductor device. To provide a semiconductor device with improved operating speed. [Solving Means] A semiconductor device including a memory cell including first to cth (c is a natural number of 2 or more) sub memory cells, wherein: the jth sub memory cell includes a first transistor, a second transistor, and a capacitor; a first semiconductor layer included in the first transistor and a second semiconductor layer included in the second transistor include an oxide semiconductor; one of terminals of the capacitor is electrically connected to a gate electrode included in the second transistor; the gate electrode included in the second transistor is electrically connected to one of a source electrode and a drain electrode which are included in the first transistor; and when j?2, the jth sub memory cell is arranged over the j?1th sub memory cell.
    Type: Grant
    Filed: March 6, 2020
    Date of Patent: September 7, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tomoaki Atsumi, Shuhei Nagatsuka, Tamae Moriwaka, Yuta Endo
  • Patent number: 11101460
    Abstract: To provide a lithium-ion secondary battery having higher discharge capacity and higher energy density and a manufacturing method thereof. The lithium-ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer provided over the positive electrode current collector. In the positive electrode active material layer, graphenes and lithium-containing composite oxides are alternately provided. The lithium-containing composite oxide is a flat single crystal particle in which the length in the b-axis direction is shorter than each of the lengths in the a-axis direction and the c-axis direction.
    Type: Grant
    Filed: January 31, 2019
    Date of Patent: August 24, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Tomoya Futamura, Tamae Moriwaka
  • Patent number: 11056516
    Abstract: Disclosed is a power storage element including a positive electrode current collector layer and a negative electrode current collector layer which are arranged on the same plane and can be formed through a simple process. The power storage element further includes a positive electrode active material layer on the positive electrode current collector layer; a negative electrode active material layer on the negative electrode current collector layer; and a solid electrolyte layer in contact with at least the positive electrode active material layer and the negative electrode active material layer. The positive electrode active material layer and the negative electrode active material layer are formed by oxidation treatment.
    Type: Grant
    Filed: September 3, 2019
    Date of Patent: July 6, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazutaka Kuriki, Ryota Tajima, Tamae Moriwaka
  • Publication number: 20200343251
    Abstract: [Problem] To provide a semiconductor device suitable for miniaturization. To provide a highly reliable semiconductor device. To provide a semiconductor device with improved operating speed. [Solving Means] A semiconductor device including a memory cell including first to cth (c is a natural number of 2 or more) sub memory cells, wherein: the jth sub memory cell includes a first transistor, a second transistor, and a capacitor; a first semiconductor layer included in the first transistor and a second semiconductor layer included in the second transistor include an oxide semiconductor; one of terminals of the capacitor is electrically connected to a gate electrode included in the second transistor; the gate electrode included in the second transistor is electrically connected to one of a source electrode and a drain electrode which are included in the first transistor; and when j?2, the jth sub memory cell is arranged over the j?1th sub memory cell.
    Type: Application
    Filed: March 6, 2020
    Publication date: October 29, 2020
    Inventors: Tomoaki ATSUMI, Shuhei NAGATSUKA, Tamae MORIWAKA, Yuta ENDO
  • Publication number: 20200321605
    Abstract: A secondary battery in which graphite that is an active material can occlude and release lithium efficiently is provided. Further, a highly reliable secondary battery in which the amount of lithium inserted and extracted into/from graphite that is an active material is prevented from varying is provided. The secondary battery includes a negative electrode including a current collector and graphite provided over the current collector, and a positive electrode. The graphite includes a plurality of graphene layers. Surfaces of the plurality of graphene layers are provided substantially along the direction of an electric field generated between the positive electrode and the negative electrode.
    Type: Application
    Filed: June 18, 2020
    Publication date: October 8, 2020
    Inventors: Shunpei YAMAZAKI, Teppei OGUNI, Tamae MORIWAKA, Junpei MOMO, Ryota TAJIMA, Nobuhiro INOUE
  • Publication number: 20200185763
    Abstract: A lithium ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer over the positive electrode current collector. The positive electrode active material layer includes a plurality of lithium-containing composite oxides each of which is expressed by LiMPO4 (M is one or more of Fe (II), Mn (II), Co (II), and Ni (II)) that is a general formula. The lithium-containing composite oxide is a flat single crystal particle in which the length in the b-axis direction is shorter than each of the lengths in the a-axis direction and the c-axis direction. The lithium-containing composite oxide is provided over the positive electrode current collector so that the b-axis of the single crystal particle intersects with the surface of the positive electrode current collector.
    Type: Application
    Filed: February 14, 2020
    Publication date: June 11, 2020
    Inventors: Tomoya FUTAMURA, Tamae MORIWAKA, Takahiro KAWAKAMI, Junpei MOMO, Nobuhiro INOUE
  • Patent number: 10593683
    Abstract: [Problem] To provide a semiconductor device suitable for miniaturization. To provide a highly reliable semiconductor device. To provide a semiconductor device with improved operating speed. [Solving Means] A semiconductor device including a memory cell including first to cth (c is a natural number of 2 or more) sub memory cells, wherein: the jth sub memory cell includes a first transistor, a second transistor, and a capacitor; a first semiconductor layer included in the first transistor and a second semiconductor layer included in the second transistor include an oxide semiconductor; one of terminals of the capacitor is electrically connected to a gate electrode included in the second transistor; the gate electrode included in the second transistor is electrically connected to one of a source electrode and a drain electrode which are included in the first transistor; and when j?2, the jth sub memory cell is arranged over the j-1th sub memory cell.
    Type: Grant
    Filed: February 14, 2019
    Date of Patent: March 17, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tomoaki Atsumi, Shuhei Nagatsuka, Tamae Moriwaka, Yuta Endo
  • Patent number: 10566649
    Abstract: A lithium ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer over the positive electrode current collector. The positive electrode active material layer includes a plurality of lithium-containing, composite oxides each of which is expressed by LiMPO4 (M is one or more of Fe (II), Mn (II), Co (II), and Ni (II)) that is a general formula. The lithium-containing composite oxide is a flat single crystal particle in which the length in the b-axis direction is shorter than each of the lengths in the a-axis direction and the c-axis direction. The lithium-containing composite oxide is provided over the positive electrode current collector so that the b-axis of the single crystal particle intersects with the surface of the positive electrode current collector.
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: February 18, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tomoya Futamura, Tamae Moriwaka, Takahiro Kawakami, Junpei Momo, Nobuhiro Inoue
  • Publication number: 20190386042
    Abstract: Disclosed is a power storage element including a positive electrode current collector layer and a negative electrode current collector layer which are arranged on the same plane and can be formed through a simple process. The power storage element further includes a positive electrode active material layer on the positive electrode current collector layer; a negative electrode active material layer on the negative electrode current collector layer; and a solid electrolyte layer in contact with at least the positive electrode active material layer and the negative electrode active material layer. The positive electrode active material layer and the negative electrode active material layer are formed by oxidation treatment.
    Type: Application
    Filed: September 3, 2019
    Publication date: December 19, 2019
    Inventors: Kazutaka KURIKI, Ryota Tajima, Tamae Moriwaka
  • Patent number: 10483044
    Abstract: To improve the reliability of a power storage device. A granular active material including carbon is used, and a net-like structure is formed on part of a surface of the granular active material. In the net-like structure, a carbon atom included in the granular active material is bonded to a silicon atom or a metal atom through an oxygen atom. Formation of the net-like structure suppresses reductive decomposition of an electrolyte solution, leading to a reduction in irreversible capacity. A power storage device using the above active material has high cycle performance and high reliability.
    Type: Grant
    Filed: August 24, 2017
    Date of Patent: November 19, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Nobuhiro Inoue, Ryota Tajima, Tamae Moriwaka, Junpei Momo, Teppei Oguni, Kai Kimura, Kazutaka Kuriki, Shunpei Yamazaki
  • Patent number: 10461103
    Abstract: Disclosed is a power storage element including a positive electrode current collector layer and a negative electrode current collector layer which are arranged on the same plane and can be formed through a simple process. The power storage element further includes a positive electrode active material layer on the positive electrode current collector layer; a negative electrode active material layer on the negative electrode current collector layer; and a solid electrolyte layer in contact with at least the positive electrode active material layer and the negative electrode active material layer. The positive electrode active material layer and the negative electrode active material layer are formed by oxidation treatment.
    Type: Grant
    Filed: August 15, 2017
    Date of Patent: October 29, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazutaka Kuriki, Ryota Tajima, Tamae Moriwaka