Patents by Inventor Tamaki Sawazaki

Tamaki Sawazaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing complementary insulated gate field effect semiconductor device by multiple implantations and diffusion
    Patent number: 4217149
    Abstract: A semiconductor substrate of an N type is formed partially of a well region of a P type by means of a first ion implantation process, then subjected to selective diffusion to form source and drain regions of a P type on the surface of the original substrate, whereby a first insulated gate field effect transistor is formed, and further subjected to selective diffusion to form source and drain region of an N type in the well, whereby a second insulated gate field effect transistor is formed.
    Type: Grant
    Filed: February 26, 1979
    Date of Patent: August 12, 1980
    Assignees: Sanyo Electric Co., Ltd., Tokyo Sanyo Electric Co., Ltd.
    Inventor: Tamaki Sawazaki