Patents by Inventor Tamara H. Wright

Tamara H. Wright has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Composite semiconductor structure formed using atomic bonding and adapted to alter the rate of thermal expansion of a substrate
    Patent number: 8154099
    Abstract: In certain embodiments, a method includes forming a composite semiconductor structure for altering a rate of thermal expansion of a first substrate. The composite semiconductor structure is formed by atomically bonding a first surface of a thermal matching substrate to a first surface of the first substrate, and atomically bonding a second surface of the thermal matching substrate to a first surface of a balancing substrate. The thermal matching substrate is adapted to alter the rate of thermal expansion of the first substrate and the balancing substrate is adapted to substantially prevent warping of the composite semiconductor structure.
    Type: Grant
    Filed: August 19, 2009
    Date of Patent: April 10, 2012
    Assignee: Raytheon Company
    Inventors: Andreas Hampp, Tamara H. Wright, Heather D. Leifeste
  • Composite Semiconductor Structure Formed Using Atomic Bonding and Adapted to Alter the Rate of Thermal Expansion of a Substrate
    Publication number: 20110042772
    Abstract: In certain embodiments, a method includes forming a composite semiconductor structure for altering a rate of thermal expansion of a first substrate. The composite semiconductor structure is formed by atomically bonding a first surface of a thermal matching substrate to a first surface of the first substrate, and atomically bonding a second surface of the thermal matching substrate to a first surface of a balancing substrate. The thermal matching substrate is adapted to alter the rate of thermal expansion of the first substrate and the balancing substrate is adapted to substantially prevent warping of the composite semiconductor structure.
    Type: Application
    Filed: August 19, 2009
    Publication date: February 24, 2011
    Applicant: Raytheon Company
    Inventors: Andreas Hampp, Tamara H. Wright, Heather D. Leifeste