Abstract: There is provided a substrate processing apparatus. The apparatus comprises: a processing chamber; an attaching plate attached to the processing chamber while being positioned by a first positioning mechanism in a direction in which the processing chamber extends and contracts due to expansion and contraction caused by temperature changes with respect to a predetermined reference position serving as a reference for measuring positional displacement in the processing chamber; and a placing table configured to place a substrate thereon and disposed in the processing chamber via a support mechanism attached to the attaching plate, the support mechanism being positioned by a second positioning mechanism at a position opposite to a position of the first positioning mechanism with respect to the reference position.

Abstract: A substrate processing apparatus includes: a processing chamber including a processing room; a heating unit that heats the processing chamber; a support including a base thermally isolated from the processing chamber and fixed to the processing chamber, and a stage inserted into an opening provided toward the processing room while being supported by the base at a position distant from a reference position in a horizontal direction, and holds the substrate in the processing room; a stage peripheral member provided in the processing chamber along a periphery of the stage in a state of being inserted into the opening; and a first positioning pin fixed to the processing chamber to position the stage peripheral member, and a second positioning pin fixed to a position farther than the first positioning pin.

Abstract: There is provided a vacuum processing apparatus for performing a vacuum process by supplying a processing gas onto a substrate arranged in a processing space kept in a vacuum atmosphere, the apparatus comprising: a first transfer space and a second transfer space in each of which the substrate is transferred; and an intermediate wall portion provided between the first transfer space and the second transfer space along the extension direction, wherein one or more processing spaces are arranged in the first transfer space along the extension direction, and two or more processing spaces are arranged in the second transfer space along the extension direction, and wherein a plurality of exhaust paths and a joined exhaust path where the plurality of exhaust paths are joined are formed in the intermediate wall portion.

Abstract: There is provided a vacuum processing apparatus for performing a vacuum process by supplying a processing gas onto a substrate arranged in a processing space kept in a vacuum atmosphere, the apparatus comprising: a first transfer space and a second transfer space in each of which the substrate is transferred; and an intermediate wall portion provided between the first transfer space and the second transfer space along the extension direction, wherein one or more processing spaces are arranged in the first transfer space along the extension direction, and two or more processing spaces are arranged in the second transfer space along the extension direction, and wherein a plurality of exhaust paths and a joined exhaust path where the plurality of exhaust paths are joined are formed in the intermediate wall portion.

Abstract: A shower plate 122 has protrusions 22 formed on the front face used with a first electrode in a plasma CVD apparatus. A plane-surface portion 23 is left around apertures of gas inlet holes 21 formed in the shower plate 122. With protrusions 22 being formed, a surface area of the first electrode is increased.

Abstract: A multiple-substrate processing apparatus includes: a reaction chamber comprised of two discrete reaction stations aligned one behind the other for simultaneously processing two substrates; a transfer chamber disposed underneath the reaction chamber, for loading and unloading substrates to and from the reaction stations simultaneously; and a load lock chamber disposed next to the transfer chamber. The transfer arm includes one or more end-effectors for simultaneously supporting two substrates one behind the other as viewed in the substrate-loading/unloading direction.

Abstract: A substrate transfer apparatus for loading and unloading substrates in a reaction chamber, includes: an arm having a distal end which is laterally movable in a straight line direction; and end-effectors for loading and unloading substrates in a reaction chamber, which include a lower end-effector and an upper end-effector. One of the lower end-effector or the upper end-effector is movably coupled to the arm at a distal end of the arm, and the other end-effector is fixed to the movably coupled end-effector. The fixed end-effector is fixed to the movably coupled end-effector.

Abstract: A substrate transfer apparatus for loading and unloading substrates in a reaction chamber, includes: an arm having a distal end which is laterally movable in a straight line direction; and end-effectors for loading and unloading substrates in a reaction chamber, which include a lower end-effector and an upper end-effector. One of the lower end-effector or the upper end-effector is movably coupled to the arm at a distal end of the arm, and the other end-effector is fixed to the movably coupled end-effector. The fixed end-effector is fixed to the movably coupled end-effector.

Abstract: A shower plate 122 has protrusions 22 formed on the front face used with a first electrode in a plasma CVD apparatus. A plane-surface portion 23 is left around apertures of gas inlet holes 21 formed in the shower plate 122. With protrusions 22 being formed, a surface area of the first electrode is increased.