Abstract: An R-T-B based permanent magnet includes main phase grains composed of R2T14B type compound. R is a rare earth element. T is iron group element(s) essentially including Fe or Fe and Co. B is boron. An average grain size of the main phase grains is 0.8 ?m to 2.8 ?m. The R-T-B based permanent magnet contains at least C and Ga in addition to R, T, and B. B is contained at 0.71 mass % to 0.86 mass %. C is contained at 0.13 mass % to 0.34 mass %. Ga is contained at 0.40 mass % to 1.80 mass %. A formula (1) of 0.14?[C]/([B]+[C])?0.30 is satisfied, where [B] is a B content represented by atom %, and [C] is a C content represented by atom %.

Abstract: An R-T-B based permanent magnet includes main phase grains composed of R2T14B type compound. R is a rare earth element. T is iron group element(s) essentially including Fe or Fe and Co. B is boron. The magnet contains at least C, Ga, and M selected from Zr, Ti, and Nb in addition to R, T, and B. B is contained at 0.71 mass % to 0.88 mass %. C is contained at 0.15 mass % to 0.34 mass %. Ga is contained at 0.40 mass % to 1.40 mass %. M is contained at 0.25 mass % to 2.50 mass %. A formula (1) of 0.14?[C]/([B]+[C])?0.30 and a formula (2) of 5.0?[B]+[C]?[M]?5.6 are satisfied, where [B], [C], and [M] are respectively a content of B, C, and M by atom %.

Abstract: An R-T-B based permanent magnet includes main phase grains composed of R2T14B type compound. R is a rare earth element. T is iron group element(s) essentially including Fe or Fe and Co. B is boron. An average grain size of the main phase grains is 0.8 ?m to 2.8 ?m. The R-T-B based permanent magnet contains at least C and Ga in addition to R, T, and B. B is contained at 0.71 mass % to 0.86 mass %. C is contained at 0.13 mass % to 0.34 mass %. Ga is contained at 0.40 mass % to 1.80 mass %. A formula (1) of 0.14?[C]/([B]+[C])?0.30 is satisfied, where [B] is a B content represented by atom %, and [C] is a C content represented by atom %.

Abstract: An R-T-B based permanent magnet includes main phase grains composed of R2T14B type compound. R is a rare earth element. T is iron group element(s) essentially including Fe or Fe and Co. B is boron. The magnet contains at least C, Ga, and M selected from Zr, Ti, and Nb in addition to R, T, and B. B is contained at 0.71 mass % to 0.88 mass %. C is contained at 0.15 mass % to 0.34 mass %. Ga is contained at 0.40 mass % to 1.40 mass %. M is contained at 0.25 mass % to 2.50 mass %. A formula (1) of 0.14?[C]/([B]+[C])?0.30 and a formula (2) of 5.0?[B]+[C]?[M]?5.6 are satisfied, where [B], [C], and [M] are respectively a content of B, C, and M by atom %.

Abstract: An R-T-B based alloy strip including columnar crystals of an R2T14B phase, wherein in a cross-section along the thickness direction, columnar crystals extend out in a radial fashion from the crystal nuclei, the R-T-B based alloy strip satisfying the following inequality (1), where D1 and D2 are, respectively, the average value for the lengths of the columnar crystals on one side and the average value for the lengths on the other side that is opposite the one side, in the direction perpendicular to the thickness direction of the cross-section. 0.9/1.1?D2/D1?1.1/0.

Abstract: An R-T-B sintered magnet including a composition containing a rare earth element, a transition element and boron, containing essentially no dysprosium as a rare earth element, and having crystal grains with a composition containing a rare earth element, a transition element and boron, and grain boundary regions formed between the crystal grains, wherein the triple point regions which are grain boundary regions surrounded by 3 or more crystal grains have a composition containing a rare earth element, a transition element and boron and have a higher mass ratio of the rare earth element than the crystal grains, the average value of the area of the triple point regions in a cross-section being no greater than 2 ?m2 and the standard deviation of the area distribution being no greater than 3.

Abstract: An R-T-B based alloy strip containing dendritic crystals including a R2T14B phase, wherein on at least one surface, the average value for the widths of the dendritic crystals is no greater than 60 ?m, and the number of crystal nuclei in the dendritic crystals is at least 500 per 1 mm square area.

Abstract: An R-T-B based alloy strip including columnar crystals of an R2T14B phase, wherein in a cross-section along the thickness direction, columnar crystals extend out in a radial fashion from the crystal nuclei, the R-T-B based alloy strip satisfying the following inequality (1), where D1 and D2 are, respectively, the average value for the lengths of the columnar crystals on one side and the average value for the lengths on the other side that is opposite the one side, in the direction perpendicular to the thickness direction of the cross-section. 0.9/1.1?D2/D1?1.1/0.

Abstract: An R-T-B sintered magnet including a composition containing a rare earth element, a transition element and boron, containing essentially no dysprosium as a rare earth element, and having crystal grains with a composition containing a rare earth element, a transition element and boron, and grain boundary regions formed between the crystal grains, wherein the triple point regions which are grain boundary regions surrounded by 3 or more crystal grains have a composition containing a rare earth element, a transition element and boron and have a higher mass ratio of the rare earth element than the crystal grains, the average value of the area of the triple point regions in a cross-section being no greater than 2 ?m2 and the standard deviation of the area distribution being no greater than 3.

Abstract: An R-T-B based alloy strip containing dendritic crystals including a R2T14B phase, wherein on at least one surface, the average value for the widths of the dendritic crystals is no greater than 60 ?m, and the number of crystal nuclei in the dendritic crystals is at least 500 per 1 mm square area.

Abstract: An R-T-B sintered magnet 100 including particles containing an R2T14B phase, obtained using an R-T-B alloy strip containing crystal grains of an R2T14B phase, wherein the R-T-B alloy strip has, in a cross-section along the thickness direction, the crystal grains extending in a radial fashion from the crystal nuclei, the following inequality (1) being satisfied, where the average value of the lengths of the crystal grains on one side in the direction perpendicular to the thickness direction and the average value of the lengths on the other side opposite the one side are represented as D1 and D2, respectively, the mean particle diameter of the particles is 0.5 to 5 ?m, and essentially no heavy rare earth elements are present. 0.9?D2/D1?1.

Abstract: A dielectric ceramic composition includes a compound having perovskite type crystal structure shown by a general formula ABO3, where A is at least one selected from Ba, Ca and Sr, and B is at least one selected from Ti and Zr. The dielectric ceramic composition includes, as subcomponents, an oxide of RA (Dy, Gd and Tb); an oxide of RB (Ho and Y); an oxide of RC (Yb and Lu); Mg oxide and an oxide including Si in terms of RA2O3, RB2O3, RC2O3, Mg and Si, respectively. Also, when contents of the oxide of RA, RB and RC with respect to 100 moles of the compound are defined as “?”, “?” and “?”, respectively, they satisfy relations of 1.2?(?/?)?5.0 and 0.5?(?/?)?10.0.

Abstract: A dielectric ceramic composition includes a compound having perovskite type crystal structure shown by a general formula ABO3, where A is at least one selected from Ba, Ca and Sr, and B is at least one selected from Ti and Zr, as a main component. The dielectric ceramic composition includes, as subcomponents, with respect to 100 moles of the compound, 1.0 to 2.5 moles of an oxide of RA (Dy, Gd and Tb); 0.2 to 1.0 mole of an oxide of RB (Ho and Y); 0.1 to 1.0 mole of an oxide of RC (Yb and Lu); 0.8 to 2.0 moles of Mg oxide and 1.2 to 3.0 moles of an oxide including Si in terms of RA2O3, RB2O3, RC2O3, Mg and Si, respectively. Also, when contents of the oxide of RA, RB and RC with respect to 100 moles of the compound are defined as “?”, “?” and “?”, respectively, the “?”, “?” and “?” satisfy relations of 2.5?(?/?)?5.0 and 1.0?(?/?)?10.0. According to the present invention, a dielectric ceramic composition having good properties can be provided.

Abstract: A dielectric ceramic composition includes a compound having perovskite type crystal structure shown by a general formula ABO3, where A is at least one selected from Ba, Ca and Sr, and B is at least one selected from Ti and Zr. The dielectric ceramic composition includes, as subcomponents, an oxide of RA (Dy, Gd and Tb); an oxide of RB (Ho and Y); an oxide of RC (Yb and Lu); Mg oxide and an oxide including Si in terms of RA2O3, RB2O3, RC2O3, Mg and Si, respectively. Also, when contents of the oxide of RA, RB and RC with respect to 100 moles of the compound are defined as “?”, “?” and “?”, respectively, they satisfy relations of 1.2?(?/?)?5.0 and 0.5?(?/?)?10.0.

Abstract: A dielectric ceramic composition includes a compound having perovskite type crystal structure shown by a general formula ABO3, where A is at least one selected from Ba, Ca and Sr, and B is at least one selected from Ti and Zr, as a main component. The dielectric ceramic composition includes, as subcomponents, with respect to 100 moles of the compound, 1.0 to 2.5 moles of an oxide of RA (Dy, Gd and Tb); 0.2 to 1.0 mole of an oxide of RB (Ho and Y); 0.1 to 1.0 mole of an oxide of RC (Yb and Lu); 0.8 to 2.0 moles of Mg oxide and 1.2 to 3.0 moles of an oxide including Si in terms of RA2O3, RB2O3, RC2O3, Mg and Si, respectively. Also, when contents of the oxide of RA, RB and RC with respect to 100 moles of the compound are defined as “?”, “?” and “?”, respectively, the “?”, “?” and “?” satisfy relations of 2.5?(?/?)?5.0 and 1.0?(?/?)?10.0. According to the present invention, a dielectric ceramic composition having good properties can be provided.

Abstract: A printing and drying method comprising laying a support sheet 20 elongated in the long direction so as to bridge both a printing zone 42 and a drying zone 44, in the printing zone 42, giving the support sheet 20 a first tension F1, in that state, printing the support sheet 20 with predetermined patterns, then feeding the support sheet 20 toward the drying zone 44, in the drying zone 44, giving the support sheet 20 on which the predetermined patterns were printed a second tension F2, and in that state, drying it in a drying chamber 62. The first tension F1 and the second tension F2 are given by separate tension giving means, and the second tension F2 is tension given along the support sheet 20 in the long direction and able to prevent shrinkage of the support sheet 20 in the long direction while passing through the drying zone 44.

Abstract: A release layer paste used for producing a multilayer electronic device, used in combination with an electrode layer paste including terpineol, dehydroterpineol, terpineol acetate, or dehydroterpineol acetate and including a ceramic powder, organic vehicle, plasticizer, and dispersion agent, the organic vehicle containing a binder having polyvinyl acetal as its main ingredient, a ratio (P/B) of the ceramic powder and the binder and plasticizer being controlled to 1.33 to 5.56 (however, excluding 5.56).

Abstract: A method of production of peeling layer paste used for producing a multilayer electronic device, having a step of preparing a primary slurry containing a ceramic powder having an average particle size of 0.1 pm or less, a binder, and a dispersion agent and having a nonvolatile concentration of 30 wt % or more, a step of adding to the primary slurry a binder-lacquer solution to dilute the primary slurry to prepare a secondary slurry having a nonvolatile concentration of 15 wt % or less and a content of the binder of 12 parts by weight or more with respect to 100 parts by weight of the ceramic powder, and a high pressure dispersion treatment step of running the secondary slurry through a wet jet mill to apply to the secondary slurry a shear rate of 1.5×106 to 1.3×107 (1/s).

Abstract: Provided is a piezoelectric ceramic with a wider operating temperature range capable of obtaining a larger amount of displacement and being easily sintered, as well as being superior in terms of ultra-low emission, environmental friendliness and ecology. A piezoelectric substrate 1 comprises a composition including a perovskite-type oxide (Na1?x?y?zKxLiyAgz)(Nb1?wTaw)O3 and a tungsten bronze-type oxide M(Nb1?vTav)2O6 (M is an element of Group 2 in the long form of the periodic table of the elements). The values of x, y and z are preferably within a range of 0.1?x?0.9, 0?y?0.2, and 0?z?0.05, respectively. The content of the tungsten bronze-type oxide is preferably 5.3 mol % or less. Thereby, a higher Curie temperature and a larger amount of displacement can be obtained, and sintering can be more easily carried out.

Abstract: A printing and drying method comprising laying a support sheet 20 elongated in the long direction so as to bridge both a printing zone 42 and a drying zone 44, in the printing zone 42, giving the support sheet 20 a first tension F1, in that state, printing the support sheet 20 with predetermined patterns, then feeding the support sheet 20 toward the drying zone 44, in the drying zone 44, giving the support sheet 20 on which the predetermined patterns were printed a second tension F2, and in that state, drying it in a drying chamber 62. The first tension F1 and the second tension F2 are given by separate tension giving means, and the second tension F2 is tension given along the support sheet 20 in the long direction and able to prevent shrinkage of the support sheet 20 in the long direction while passing through the drying zone 44.