Abstract: A semiconductor light-emitting device, including a first substrate of a first conductivity type, a first bonding layer provided on the first substrate and consisting essentially of a GaP material of the first conductivity type, a second bonding layer provided on the first bonding layer, coincident with the first bonding layer in the planar direction of the crystal, having the first conductivity type, and consisting essentially of a material represented by a formula InxGayP, where 0?x, y?1, and x+y=1, and a light-emitting layer comprising a first cladding layer, an active layer, and a second cladding layer, which are successively provided on the second bonding layer, each of the active layer and first and second cladding layers consisting essentially of a material represented by a formula InxGayAlzP, where x+y+z=1, and 0?x, y, z?1.

Abstract: A semiconductor light-emitting device, including a first substrate of a first conductivity type, a first bonding layer provided on the first substrate and consisting essentially of a GaP material of the first conductivity type, a second bonding layer provided on the first bonding layer, coincident with the first bonding layer in the planar direction of the crystal, having the first conductivity type, and consisting essentially of a material represented by a formula InxGayP, where 0≦x, y≦1, and x+y=1, and a light-emitting layer comprising a first cladding layer, an active layer, and a second cladding layer, which are successively provided on the second bonding layer, each of the active layer and first and second cladding layers consisting essentially of a material represented by a formula InxGayAlzP, where x+y+z=1, and 0≦x, y, z≦1.

Abstract: A semiconductor light-emitting device, including a first substrate of a first conductivity type, a first bonding layer provided on said first substrate and consisting essentially of a GaP material of the first conductivity type, a second bonding layer provided on the first bonding layer, coincident with the first bonding layer in a crystal orientation, having the first conductivity type, and consisting essentially of a material represented by a formula InxGayP, where 0≦x, y≦1, and x+y=1, and a light-emitting layer comprising a first cladding layer, an active layer, and a second cladding layer, which are successively provided on the second bonding layer, each of the active layer and first and second cladding layers consisting essentially of a material represented by a formula InxGayAlzP, where x+y+z=1, and 0≦x, y, z≦1.

Abstract: A semiconductor light-emitting device, including a first substrate of a first conductivity type, a first bonding layer provided on the first substrate and consisting essentially of a GaP material of the first conductivity type, a second bonding layer provided on the first bonding layer, coincident with the first bonding layer in the planar direction of the crystal, having the first conductivity type, and consisting essentially of a material represented by a formula InxGayP, where 0≦x, y≦1, and x+y=1, and a light-emitting layer comprising a first cladding layer, an active layer, and a second cladding layer, which are successively provided on the second bonding layer, each of the active layer and first and second cladding layers consisting essentially of a material represented by a formula InxGayAlzP, where x+y+z=1, and 0≦x, y, z≦1.

Abstract: A magnetic recording system for recording information on a magnetic recording medium magnetized with a perpedicular magnetization component by a magnetic recording head so as to be reproduced by a magnetic reproducing head, the magnetic recording head including a leading side and a trailing side opposite to the leading side, the leading side leading the trailing side in terms of motion relative to the magnetic recording medium, the magnetic recording head generating a first magnetic field with a field strength from the leading side to the magnetic recording medium, and generating a second magnetic field from the trailing side to the magnetic recording medium, a field strength of the second magnetic field being smaller than that of the first magnetic field.

Abstract: A magnetic recording system for recording information on a magnetic recording medium magnetized with a perpedicular magnetization component by a magnetic recording head so as to be reproduced by a magnetic reproducing head, the magnetic recording head including a leading side and a trailing side opposite to the leading side, the leading side leading the trailing side in terms of motion relative to the magnetic recording medium, the magnetic recording head generating a first magnetic field with a field strength from the leading side to the magnetic recording medium, and generating a second magnetic field from the trailing side to the magnetic recording medium, a field strength of the second magnetic field being smaller than that of the first magnetic field.

Abstract: A magnetic recording system for recording information on a magnetic recording medium magnetized with a perpendicular magnetization component by a magnetic recording head so as to be reproduced by a magnetic reproducing head, the magnetic recording head including a leading side and a trailing side opposite to the leading side, the leading side leading the trailing side in terms of motion relative to the magnetic recording medium, the magnetic recording head generating a first magnetic field with a field strength from the leading side to the magnetic recording medium, and generating a second magnetic field from the trailing side to the magnetic recording medium, a field strength of the second magnetic field being smaller than that of the first magnetic field.

Abstract: A reproduction waveform signal l(having a frequency f) containing perpendicular and longitudinal components is reproduced from a recording medium which is magnetized in the vertical direction, thereby recording digital information. The signal is processed through a waveform processing circuit including an operational amplifier having an input side connected to a time constant-setting circuit comprising a capacitor and a resistor, thereby obtaining a processed waveform signal having a constant amplitude and a phase shifted by 2.times.(tan.sup.-1 2.pi.fA).degree. . Bits of the digital information is detected from the processed waveform signal.