Patents by Inventor Tamotsu Maruyama
Tamotsu Maruyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7771893Abstract: A light-shielding film for exposure light is formed on one principal plane of a transparent substrate made of quartz or the like that serves as a photomask substrate. The light-shielding film can serve not only as the so-called “light-shielding film” but also as an anti-reflection film. In addition, the light-shielding film has a total thickness of 100 nm or less, 70% or more of which is accounted for by the thickness of a chromium compound that has an optical density (OD) per unit thickness of 0.025 nm?1 for light having a wavelength of 450 nm. In the case where the photomask blank is used for fabricating a mask designed for ArF exposure, the thickness and composition of the light-shielding film are selected in such a manner that the OD of the light-shielding film is 1.2 to 2.3 for 193 or 248 nm wavelength light.Type: GrantFiled: July 20, 2006Date of Patent: August 10, 2010Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Hiroki Yoshikawa, Hiroshi Kubota, Yoshinori Kinase, Satoshi Okazaki, Tamotsu Maruyama, Takashi Haraguchi, Masahide Iwakata, Yuichi Fukushima, Tadashi Saga
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Patent number: 7622227Abstract: On a substrate that is transparent to exposure light, a phase-shift multilayer film including a stack of two layers of a metal silicide compound is formed. A stabilized oxide layer is formed on the surface of the metal silicide compound layer close to the top surface. The layer close to the substrate (the lower layer) of the phase-shift multilayer film is made of a relatively-metal-rich metal silicide compound, and the upper layer is made of a relatively-metal-poor metal silicide compound. The stabilized oxide layer has a metal-poor composition, and the metal content thereof is equal to or less than one third of the metal content of the lower layer. Thus, the stabilized oxide layer is highly chemically stable and has a high chemical resistance.Type: GrantFiled: May 11, 2006Date of Patent: November 24, 2009Assignee: Shin-Etsu Chemical Co., LtdInventors: Yukio Inazuki, Hiroki Yoshikawa, Tamotsu Maruyama, Satoshi Okazaki
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Publication number: 20070020534Abstract: A light-shielding film for exposure light is formed on one principal plane of a transparent substrate made of quartz or the like that serves as a photomask substrate. The light-shielding film can serve not only as the so-called “light-shielding film” but also as an anti-reflection film. In addition, the light-shielding film has a total thickness of 100 nm or less, 70% or more of which is accounted for by the thickness of a chromium compound that has an optical density (OD) per unit thickness of 0.025 nm?1 for light having a wavelength of 450 nm. In the case where the photomask blank is used for fabricating a mask designed for ArF exposure, the thickness and composition of the light-shielding film are selected in such a manner that the OD of the light-shielding film is 1.2 to 2.3 for 193 or 248 nm wavelength light.Type: ApplicationFiled: July 20, 2006Publication date: January 25, 2007Inventors: Hiroki Yoshikawa, Hiroshi Kubota, Yoshinori Kinase, Satoshi Okazaki, Tamotsu Maruyama, Takashi Haraguchi, Masahide Iwakata, Yuichi Fukushima, Tadashi Saga
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Publication number: 20060257755Abstract: On a substrate that is transparent to exposure light, a phase-shift multilayer film including a stack of two layers of a metal silicide compound is formed. A stabilized oxide layer is formed on the surface of the metal silicide compound layer close to the top surface. The layer close to the substrate (the lower layer) of the phase-shift multilayer film is made of a relatively-metal-rich metal silicide compound, and the upper layer is made of a relatively-metal-poor metal silicide compound. The stabilized oxide layer has a metal-poor composition, and the metal content thereof is equal to or less than one third of the metal content of the lower layer. Thus, the stabilized oxide layer is highly chemically stable and has a high chemical resistance.Type: ApplicationFiled: May 11, 2006Publication date: November 16, 2006Inventors: Yukio Inazuki, Hiroki Yoshikawa, Tamotsu Maruyama, Satoshi Okazaki
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Patent number: 6733930Abstract: In a photomask blank comprising a light-shielding film and an antireflective film on a transparent substrate, the light-shielding film and the antireflective film are formed of a chromium base material containing oxygen, nitrogen and carbon such that the content of carbon decreases stepwise or continuously from a surface side toward the substrate. The photomask blank can be etched at a controlled rate to produce perpendicular walls. A photomask is manufactured by lithographically patterning the photomask blank. The photomask blank and photomask have uniform film properties and contribute to the microfabrication of semiconductor ICs of greater density and finer feature size.Type: GrantFiled: February 13, 2002Date of Patent: May 11, 2004Assignee: Shin-Etsu Chemical Co., LTDInventors: Tsutomu Shinagawa, Tamotsu Maruyama, Hideo Kaneko, Mikio Kojima, Yukio Inazuki, Satoshi Okazaki
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Patent number: 6727027Abstract: In the manufacture of a photomask blank, a seed layer of a chromium material containing oxygen, nitrogen and/or carbon is formed on a transparent substrate before a light-shielding film and an antireflective film are deposited thereon. Any film on the seed layer builds up in accordance with fine granular growth, and so the resulting photomask blank has an improved surface roughness, which enables high-sensitivity detection in the process of defect inspection and circuit pattern inspection. By lithographically patterning the photomask blank, a photomask is fabricated.Type: GrantFiled: December 19, 2001Date of Patent: April 27, 2004Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Tetsushi Tsukamoto, Hideo Kaneko, Tamotsu Maruyama, Yukio Inazuki, Tsutomu Shinagawa, Satoshi Okazaki
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Patent number: 6641958Abstract: A phase shift mask blank includes a transparent substrate and a phase shift film composed primarily of a metal and silicon. The substrate has an etch rate A and the phase shift film has an etch rate B when the blank is patterned by reactive ion etching, such that the etch selectivity B/A is at least 5.0. When a phase shift mask is manufactured from the blank, the substrate is less prone to overetching, providing good controllability and in-plane uniformity of the phase shift in patterned areas. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration.Type: GrantFiled: July 12, 2001Date of Patent: November 4, 2003Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Yukio Inazuki, Tamotsu Maruyama, Mikio Kojima, Hideo Kaneko, Masataka Watanabe, Satoshi Okazaki
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Patent number: 6514642Abstract: In a phase shift mask comprising an exposure light-transmitting substrate and a second light-transmitting region thereon, the second light-transmitting region functions as a phase shifter and is made of a fluorine-doped molybdenum silicide film or fluorine-doped chromium silicide film formed by a sputtering technique that uses molybdenum metal, chromium metal, molybdenum silicide or chromium silicide as the target and SiF2 as the reactive gas. The phase shifter has a high refractive index to short-wavelength exposure light, enabling a 180-degree phase change to be achieved at a minimum film thickness, and also has a good stability to such light. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration.Type: GrantFiled: February 23, 2001Date of Patent: February 4, 2003Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Satoshi Okazaki, Tamotsu Maruyama, Yukio Inazuki, Hideo Kaneko, Shinichi Kohno
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Patent number: 6511778Abstract: A phase shift mask blank comprising a transparent substrate and at least one layer of a phase shifter thereon, wherein the phase shifter is a film composed primarily of a fluorine-doped metal silicide, can be fabricated into a high-performance phase shift mask having adequate transmittance and good stability over time even when used with light sources that emit short-wavelength light. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration.Type: GrantFiled: January 4, 2001Date of Patent: January 28, 2003Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Satoshi Okazaki, Ichiro Kaneko, Jiro Moriya, Masayuki Suzuki, Tamotsu Maruyama
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Patent number: 6503668Abstract: A phase shift mask blank has a phase shift film of MoSiOC or MoSiONC on a transparent substrate, and optionally a chromium-based light-shielding film, a chromium-based antireflection film or a multilayer combination of both on the phase shift film. A manufacture method involving depositing the MoSi base phase shift film by a reactive sputtering technique using a sputtering gas containing carbon dioxide produces a phase shift mask blank and phase shift mask of quality, with advantages of in-plane uniformity and easy control during manufacture.Type: GrantFiled: January 11, 2001Date of Patent: January 7, 2003Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Yukio Inazuki, Hideo Kaneko, Tamotsu Maruyama, Satoshi Okazaki
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Patent number: 6503669Abstract: A photomask blank has at least one layer of chromium base film on a transparent substrate. The chromium base film of chromium oxycarbide (CrCO) or chromium oxynitride carbide (CrCON) is formed by a reactive sputtering technique using chromium or chromium containing O, N or C as the target and a mixture of carbon dioxide gas and an inert gas as the sputtering gas. A photomask is manufactured by lithographically patterning the photomask blank. The photomask blank and photomask are of quality featuring high uniformity within the substrate plane and ease of control during manufacture.Type: GrantFiled: February 15, 2001Date of Patent: January 7, 2003Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Hideo Kaneko, Yukio Inazuki, Tamotsu Maruyama, Satoshi Okazaki
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Publication number: 20020136966Abstract: In a photomask blank comprising a light-shielding film and an antireflective film on a transparent substrate, the light-shielding film and the antireflective film are formed of a chromium base material containing oxygen, nitrogen and carbon such that the content of carbon decreases stepwise or continuously from a surface side toward the substrate. The photomask blank can be etched at a controlled rate to produce perpendicular walls. A photomask is manufactured by lithographically patterning the photomask blank. The photomask blank and photomask have uniform film properties and contribute to the microfabrication of semiconductor ICs of greater density and finer feature size.Type: ApplicationFiled: February 13, 2002Publication date: September 26, 2002Inventors: Tsutomu Shinagawa, Tamotsu Maruyama, Hideo Kaneko, Mikio Kojima, Yukio Inazuki, Satoshi Okazaki
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Publication number: 20020115003Abstract: In the manufacture of a photomask blank, a seed layer of a chromium material containing oxygen, nitrogen and/or carbon is formed on a transparent substrate before a light-shielding film and an antireflective film are deposited thereon. Any film on the seed layer builds up in accordance with fine granular growth, and so the resulting photomask blank has an improved surface roughness, which enables high-sensitivity detection in the process of defect inspection and circuit pattern inspection. By lithographically patterning the photomask blank, a photomask is fabricated.Type: ApplicationFiled: December 19, 2001Publication date: August 22, 2002Inventors: Tetsushi Tsukamoto, Hideo Kaneko, Tamotsu Maruyama, Yukio Inazuki, Tsutomu Shinagawa, Satoshi Okazaki
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Patent number: 6352801Abstract: A phase shift mask has a phase shifter formed on a substrate which is transmissive to exposure light. The phase shifter serving as a second light transmissive region is constructed of gadolinium gallium garnet. The shifter film formed under the sputtering conditions capable of restraining the generation of particles causing film defects is homogeneous, and the phase shift mask is of high precision.Type: GrantFiled: May 19, 2000Date of Patent: March 5, 2002Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Satoshi Okazaki, Hideo Kaneko, Tamotsu Maruyama, Yukio Inazuki
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Publication number: 20020025478Abstract: A phase shift mask blank includes a transparent substrate and a phase shift film composed primarily of a metal and silicon. The substrate has an etch rate A and the phase shift film has an etch rate B when the blank is patterned by reactive ion etching, such that the etch selectivity B/A is at least 5.0. When a phase shift mask is manufactured from the blank, the substrate is less prone to overetching, providing good controllability and in-plane uniformity of the phase shift in patterned areas. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration.Type: ApplicationFiled: July 12, 2001Publication date: February 28, 2002Applicant: Shin-Etsu Shemical Co., Ltd.Inventors: Yukio Inazuki, Tamotsu Maruyama, Mikio Kojima, Hideo Kaneko, Masataka Watanabe, Satoshi Okazaki
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Publication number: 20010028982Abstract: In a phase shift mask comprising an exposure light-transmitting substrate and a second light-transmitting region thereon, the second light-transmitting region functions as a phase shifter and is made of a fluorine-doped molybdenum silicide film or fluorine-doped chromium silicide film formed by a sputtering technique that uses molybdenum metal, chromium metal, molybdenum silicide or chromium silicide as the target and SiF2 as the reactive gas. The phase shifter has a high refractive index to short-wavelength exposure light, enabling a 180-degree phase change to be achieved at a minimum film thickness, and also has a good stability to such light. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration.Type: ApplicationFiled: February 23, 2001Publication date: October 11, 2001Inventors: Satoshi Okazaki, Tamotsu Maruyama, Yukio Inazuki, Hideo Kaneko, Shinichi Kohno
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Publication number: 20010019801Abstract: A photomask blank has at least one layer of chromium base film on a transparent substrate. The chromium base film of chromium oxycarbide (CrCO) or chromium oxynitride carbide (CrCON) is formed by a reactive sputtering technique using chromium or chromium containing O, N or C as the target and a mixture of carbon dioxide gas and an inert gas as the sputtering gas. A photomask is manufactured by lithographically patterning the photomask blank. The photomask blank and photomask are of quality featuring high uniformity within the substrate plane and ease of control during manufacture.Type: ApplicationFiled: February 15, 2001Publication date: September 6, 2001Inventors: Hideo Kaneko, Yukio Inazuki, Tamotsu Maruyama, Satoshi Okazaki
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Publication number: 20010007731Abstract: A phase shift mask blank has a phase shift film of MoSiOC or MoSiONC on a transparent substrate, and optionally a chromium-based light-shielding film, a chromium-based antireflection film or a multilayer combination of both on the phase shift film. A manufacture method involving depositing the MoSi base phase shift film by a reactive sputtering technique using a sputtering gas containing carbon dioxide produces a phase shift mask blank and phase shift mask of quality, with advantages of in-plane uniformity and easy control during manufacture.Type: ApplicationFiled: January 11, 2001Publication date: July 12, 2001Inventors: Yukio Inazuki, Hideo Kaneko, Tamotsu Maruyama, Satoshi Okazaki
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Publication number: 20010006754Abstract: A phase shift mask blank comprising a transparent substrate and at least one layer of a phase shifter thereon, wherein the phase shifter is a film composed primarily of a fluorine-doped metal silicide, can be fabricated into a high-performance phase shift mask having adequate transmittance and good stability over time even when used with light sources that emit short-wavelength light. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration.Type: ApplicationFiled: January 4, 2001Publication date: July 5, 2001Inventors: Satoshi Okazaki, Ichiro Kaneko, Jiro Moriya, Masayuki Suzuki, Tamotsu Maruyama
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Patent number: 5989985Abstract: In a semiconductor single crystalline substrate provided with a protecting film to prevent autodoping on the reverse surface thereof, for growing a vapor-phase epitaxial layer on the main obverse surface thereof, a width of a chamfer is set for locating an edge-crown occurred in consequence of a vapor-phase epitaxial growth on the chamfer, and a gap of a distance is formed between a periphery of the protecting film and an innermost part of the chamfer on the reverse surface.Type: GrantFiled: June 27, 1997Date of Patent: November 23, 1999Assignee: Shin-Etsu Handotai Co., Ltd.Inventors: Tamotsu Maruyama, Shigeyuki Sato