Abstract: A nitride semiconductor device according to the present disclosure includes a substrate, a p-type GaN layer formed on a main surface of the substrate and made of AlxInyGa1-x-yN containing p-type impurities, where 0?X<1, 0?Y<1, and a Ti film formed on the p-type GaN layer. The Ti film is in a coherent or metamorphic state with respect to the p-type GaN layer.

Abstract: A floppy disk cartridge 1 includes an upper shell 3a and a lower shell 3b, a magnetic disk 4 rotatably incorporated between the upper shell 3a and the lower shell 3b, head windows 2, 2 provided at respective one sides of the upper shell 3a and the lower shell 3b so as to face with each other, and liners 7a, 7a respectively attached to inner faces of the upper shell 3a and the lower shell 3b except the head windows 2, 2 for protecting the magnetic disk 4, characterized in that at the inner face of either one of the upper shell 3a and the lower shell 3b are formed concave portions 8, 8 along both left and right side edges of the head window 2, and that the liner 7a is attached to the inner face of the upper shell 3a or the lower shell 3b from respective outer edges of the concave portions 8, 8.