Abstract: The present invention provides a 6,13-dihalogen-5,14-dihydropentacene derivative and a method for production thereof. Compounds (b) and (c) are reacted through cross-coupling reaction in the presence of a metal compound and a lithiating agent to synthesize compound (d), which is then halogenated to thereby obtain a 6,13-dihalogen-5,14-dihydropentacene derivative (compound (e)). [wherein X1 and X2 are each a halogen atom, and R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 are each a hydrogen atom, an optionally substituted C1-C20 hydrocarbon group, etc.

Abstract: The present invention provides a 6,13-dihalogen-5,14-dihydropentacene derivative and a method for production thereof. Compounds (b) and (c) are reacted through cross-coupling reaction in the presence of a metal compound and a lithiating agent to synthesize compound (d), which is then halogenated to thereby obtain a 6,13-dihalogen-5,14-dihydropentacene derivative (compound (e)). [wherein X1 and X2 are each a halogen atom, and R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 are each a hydrogen atom, an optionally substituted C1-C20 hydrocarbon group, etc.

Abstract: An organic semiconductor material is provided. The organic semiconductor material includes a polyacene derivative expressed by the following general formula (1): where each of R1 to R10 may be independently the same substituents or different substituents but all of R1, R4, R5, R6, R9 and R10 may never be hydrogen atoms at the same time, and where each of R1 to R10 is at least one kind of substituent selected from the group consisting of an aliphatic hydrocarbon group having a substituent and of which number of carbon atoms ranges of from 1 to 20, an aromatic hydrocarbon group having a substituent, a complex aromatic group having a substituent, a carboxyl group, a hydride, an ester group, a cyano group, a hydroxyl group, a halogen atom and a hydrogen atom. The organic semiconductor material can be dissolved into an organic solvent at low temperature (for example, room temperature) and is suitable for use with a coating process.

Abstract: Materials for photoelectric conversion devices, consisting of polyacene derivatives represented by general formula (I) below; and photoelectric conversion devices made by using the materials. The materials for photoelectric conversion devices have excellent workability and productivity, exhibit low toxicity, are easily flexibilized, and have high photoelectric conversion efficiencies. In the formula, R1, R2, R3, R4, R5, R6, R7, R8, A1, A2, A3, and A4 are independent from each other, either the same or different, and each represents a hydrogen atom, a halogen atom, an optionally substituted hydrocarbon group having 1 to 40 carbon atoms, or the like. n is an integer of 1 or more.

Abstract: Materials for photoelectric conversion devices, consisting of polyacene derivatives represented by general formula (I) below; and photoelectric conversion devices made by using the materials. The materials for photoelectric conversion devices have excellent workability and productivity, exhibit low toxicity, are easily flexibilized, and have high photoelectric conversion efficiencies. In the formula, R1, R2, R3, R4, R5, R6, R7, R8, A1, A2, A3, and A4 are independent from each other, either the same or different, and each represents a hydrogen atom, a halogen atom, an optionally substituted hydrocarbon group having 1 to 40 carbon atoms, or the like. n is an integer of 1 or more.

Abstract: An organic semiconductor material is provided. The organic semiconductor material includes a polyacene derivative expressed by the following general formula (1): where each of R1 to R10 may be independently the same substituents or different substituents but all of R1, R4, R5, R6, R9 and R10 may never be hydrogen atoms at the same time, and where each of R1 to R10 is at least one kind of substituent selected from the group consisting of an aliphatic hydrocarbon group having a substituent and of which number of carbon atoms ranges of from 1 to 20, an aromatic hydrocarbon group having a substituent, a complex aromatic group having a substituent, a carboxyl group, a hydride, an ester group, a cyano group, a hydroxyl group, a halogen atom and a hydrogen atom. The organic semiconductor material can be dissolved into an organic solvent at low temperature (for example, room temperature) and is suitable for use with a coating process.

Abstract: An organic semiconductor material is provided. The organic semiconductor material includes a polyacene derivative expressed by the following general formula (1): where each of R1 to R10 may be independently the same substituents or different substituents but all of R1, R4, R5, R6, R9 and R10 may never be hydrogen atoms at the same time, and where each of R1 to R10 is at least one kind of substituent selected from the group consisting of an aliphatic hydrocarbon group having a substituent and of which number of carbon atoms ranges of from 1 to 20, an aromatic hydrocarbon group having a substituent, a complex aromatic group having a substituent, a carboxyl group, a hydride, an ester group, a cyano group, a hydroxyl group, a halogen atom and a hydrogen atom. The organic semiconductor material can be dissolved into an organic solvent at low temperature (for example, room temperature) and is suitable for use with a coating process.

Abstract: A photoelectric conversion element having a photoelectric conversion layer between opposing anode electrode and cathode electrode, the photoelectric conversion layer having a structure in which (1) a p-type semiconductor layer and (2) a layer mixing a p-type semiconductor with an n-type semiconductor, and, as required, (3) an n-type semiconductor layer or a metal oxide layer are sequentially layered, characterized in that at least one photoelectric conversion efficiency improving means out of the following (a)-(c) is used. (a) An organic semiconductor thin film with a charge mobility of at least 0.005 cm2/V·sec being used as at least one semiconductor layer in (1)-(3). (b) The energy gap between the work function of the anode electrode and the HOMO (highest occupied molecular orbit) of the p-type semiconductor layer in (1) and/or the energy gap between the work function of the cathode electrode and the LUMO (lowest unoccupied molecular orbit) of the n-type semiconductor layer in (3) being up to 0.5 eV.

Abstract: Materials for photoelectric conversion devices, consisting of polyacene derivatives represented by general formula (I) below; and photoelectric conversion devices made by using the materials. The materials for photoelectric conversion devices have excellent workability and productivity, exhibit low toxicity, are easily flexibilized, and have high photoelectric conversion efficiencies. In the formula, R1, R2, R3, R4, R5, R6, R7, R8, A1, A2, A3, and A4 are independent from each other, either the same or different, and each represents a hydrogen atom, a halogen atom, an optionally substituted hydrocarbon group having 1 to 40 carbon atoms, or the like. n is an integer of 1 or more.

Abstract: A receiving circuit of a direct conversion system which includes a differential amplifier circuit which amplifies a received signal, a mixer which combines the amplified received signal and an oscillation signal having a predetermined frequency to perform frequency conversion, and a high gain amplifier circuit in which programmable gain amplifiers and filters which eliminate noise of the received signal, are connected in a multistage and which is configured such that an amplification factor is varied according to the level of the received signal. In the receiving circuit, the low noise amplifier is brought to a non-operating state to allow execution of a DC offset cancel operation of the programmable gain amplifier on the pre-stage side of the high gain amplifier circuit. Thereafter, the low noise amplifier is brought to an operating state to allow execution of a DC offset cancel operation of the final-stage programmable gain amplifier.

Abstract: A receiving circuit of a direct conversion system which includes a differential amplifier circuit which amplifies a received signal, a mixer which combines the amplified received signal and an oscillation signal having a predetermined frequency to perform frequency conversion, and a high gain amplifier circuit in which programmable gain amplifiers and filters which eliminate noise of the received signal, are connected in a multistage and which is configured such that an amplification factor is varied according to the level of the received signal. In the receiving circuit, the low noise amplifier is brought to a non-operating state to allow execution of a DC offset cancel operation of the programmable gain amplifier on the pre-stage side of the high gain amplifier circuit. Thereafter, the low noise amplifier is brought to an operating state to allow execution of a DC offset cancel operation of the final-stage programmable gain amplifier.

Abstract: A receiving circuit of a direct conversion system is provided which includes a differential amplifier circuit which amplifies a received signal, a mixer which combines the amplified received signal and an oscillation signal having a predetermined frequency to thereby perform frequency conversion, and a high gain amplifier circuit in which a plurality of programmable gain amplifiers and a plurality of filters which eliminate noise of the received signal and an unnecessary wave, are connected in a multistage and which is configured such that an amplification factor is varied according to the level of the received signal. In the receiving circuit, the low noise amplifier is brought to a non-operating state to thereby allow execution of a DC offset cancel operation of the corresponding programmable gain amplifier on the pre-stage side of the high gain amplifier circuit.

Abstract: A novel transition metal compound wherein the transition metal belongs to group 4 of the periodic table and the transition metal compound has a hydrogen atom ligand and three cyclopentadienyl ligands comprising at least one substituted cyclopentadienyl ligand. The novel transition metal compound can be used as a component of a catalyst exhibiting high activity for olefin polymerization and is characteristic in containing no halogen element.

Abstract: An organic semiconductor material is provided. The organic semiconductor material includes a polyacene derivative expressed by the following general formula (1): where each of R1 to R10 may be independently the same substituents or different substituents but all of R1, R4, R5, R6, R9 and R10 may never be hydrogen atoms at the same time, and where each of R1 to R10 is at least one kind of substituent selected from the group consisting of an aliphatic hydrocarbon group having a substituent and of which number of carbon atoms ranges of from 1 to 20, an aromatic hydrocarbon group having a substituent, a complex aromatic group having a substituent, a carboxyl group, a hydride, an ester group, a cyano group, a hydroxyl group, a halogen atom and a hydrogen atom. The organic semiconductor material can be dissolved into an organic solvent at low temperature (for example, room temperature) and is suitable for use with a coating process.

Abstract: A communication semiconductor high-frequency IC device includes an offset-PLL transmission circuit. The device does not require an intermediate-frequency voltage controlled oscillator (IFVCO) to generate an intermediate-frequency (IF) signal and can modulate and demodulate transmission and reception signals of desired frequency bands without a complicated frequency division control circuit. An RF-PLL includes an RFVCO to generate a local oscillation signal shared by a transmission circuit and receiving circuit; controllers, capable of dividing a signal by a frequency dividing ratio represented by an integer, as a frequency divider to divide a reference oscillation signal (?ref) and a frequency divider to divide its own oscillation signal (?FB); and a frequency divider to divide a local oscillation signal (?RF) from the RF-PLL to generate an IF signal (?IF) necessary for the transmission circuit. The frequency dividing ratios of the dividers are changed according to a transmission or reception frequency.

Abstract: A novel transition metal compound wherein the transition metal belongs to group 4 of the periodic table and the transition metal compound has a hydrogen atom ligand and three cyclopentadienyl ligands comprising at least one substituted cyclopentadienyl ligand. The novel transition metal compound can be used as a component of a catalyst exhibiting high activity for olefin polymerization and is characteristic in containing no halogen element.

Abstract: The present invention provides organic electroluminescent elements selected from polyacene derivatives represented by general formula (I) below: [wherein, R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, A1 and A2, which are the same or different, each represents hydrogen atom, a hydrocarbon group, etc., and n denotes an integer of not less than 1]. The organic electroluminescent elements of the present invention can provide materials for organic electroluminescent elements and organic electroluminescent elements, which are excellent in stability, durability, luminance and luminance efficiency.

Abstract: A receiving circuit of a direct conversion system is provided which includes a differential amplifier circuit which amplifies a received signal, a mixer which combines the amplified received signal and an oscillation signal having a predetermined frequency to thereby perform frequency conversion, and a high gain amplifier circuit in which a plurality of programmable gain amplifiers and a plurality of filters which eliminate noise of the received signal and an unnecessary wave, are connected in a multistage and which is configured such that an amplification factor is varied according to the level of the received signal. In the receiving circuit, the low noise amplifier is brought to a non-operating state to thereby allow execution of a DC offset cancel operation of the corresponding programmable gain amplifier on the pre-stage side of the high gain amplifier circuit.

Abstract: This invention provides polyarylenes having a recurring unit shown by formula (I) or (II) below and a process for production thereof as well as these monomers: (wherein Ar1 and Ar2 are an arylene; R1 and R2 are C1-C20 hydrocarbon group, etc.; A1 and A2 are C1-C20 hydrocarbon group, etc.; and n is an integer of 2 or more); (wherein Ar1 and Ar2 are an arylene; R1 and R2 are C1-C20 hydrocarbon group, etc.; A1 and A2 are C1-C20 hydrocarbon group, etc.; and n is an integer of 2 or more) The polyarylenes of the invention find extensive applications as electrically conductive resins. The polyarylenes can be used also as resin compositions in a variety of formed shapes.

Abstract: The present invention relates to polyacene derivatives represented by general formula (I) below: 1