Patents by Inventor Tamura Masao

Tamura Masao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making three dimensional semiconductor devices in selectively laser regrown polysilicon or amorphous silicon layers
    Patent number: 4609407
    Abstract: Herein disclosed is a semiconductor device having at least one lower resistance region formed in the single-crystalline semiconductor film which is so formed to continuously coat both a single-crystalline semiconductor substrate and an insulating film formed on the surface of the substrate.Since the aforementioned single-crystalline semiconductor film is used, many advantages which are not attained from the semiconductor device according to the prior art can be obtained.The aforementioned single-crystalline semiconductor film is formed by irradiating a polycrystalline or amorphous semiconductor film with a laser beam.
    Type: Grant
    Filed: December 19, 1983
    Date of Patent: September 2, 1986
    Assignee: Hitachi, Ltd.
    Inventors: Tamura Masao, Hirotsugu Kozuka, Yasuo Wada, Makoto Ohkura, Tamura Hiroshi, Takashi Tokuyama, Takahiro Okabe, Osamu Minato, Shinya Ohba