Patents by Inventor Tan G. Liu

Tan G. Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-flux efficiency filter fabrication using a flip bond process with supportive structure
    Patent number: 11724233
    Abstract: A first wafer has a first stop layer deposited on a substrate, the substrate used to form a base support structure. A second wafer has a second stop layer deposited on a sacrificial substrate, and a filter layer deposited on the second stop layer. A rib layer is deposited on one of: the first stop layer of the first layer; or a third stop layer that is deposited over the filter layer. A rib pattern is formed in the rib layer. The first and second wafers are flip bonded such that the rib pattern is joined between the filter layer and the first stop layer. Elongated voids are formed within the filter layer. The base support structure is formed within the substrate of the first wafer such that there is a fluid flow path between the base support structure, the rib layer, and the elongated voids of the filter layer.
    Type: Grant
    Filed: July 9, 2020
    Date of Patent: August 15, 2023
    Assignee: Seagate Technology LLC
    Inventors: Thomas Young Chang, Kim Yang Lee, Tan G. Liu, Yautzong Hsu, Shuaigang Xiao
  • HIGH-FLUX EFFICIENCY FILTER FABRICATION USING A FLIP BOND PROCESS WITH SUPPORTIVE STRUCTURE
    Publication number: 20210245109
    Abstract: A first wafer has a first stop layer deposited on a substrate, the substrate used to form a base support structure. A second wafer has a second stop layer deposited on a sacrificial substrate, and a filter layer deposited on the second stop layer. A rib layer is deposited on one of: the first stop layer of the first layer; or a third stop layer that is deposited over the filter layer. A rib pattern is formed in the rib layer. The first and second wafers are flip bonded such that the rib pattern is joined between the filter layer and the first stop layer. Elongated voids are formed within the filter layer. The base support structure is formed within the substrate of the first wafer such that there is a fluid flow path between the base support structure, the rib layer, and the elongated voids of the filter layer.
    Type: Application
    Filed: July 9, 2020
    Publication date: August 12, 2021
    Inventors: Thomas Young Chang, Kim Yang Lee, Tan G. Liu, Yautzong Hsu, Shuaigang Xiao