Patents by Inventor Tanay Gasovi

Tanay Gasovi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200105324
    Abstract: A magnetic tunnel junction (MTJ) for use in a magnetic spin orbit torque random access memory device (SOT MRAM) is described. Magnetic tunnel junctions described herein include a multi-magnet free layer over a spin orbit torque electrode. The multi-magnet free layer includes at least three sub-layers: a first magnetic sub-layer in direct contact with the SOT electrode having a first magnetic stability, a second magnetic sub-layer having a second magnetic stability greater than the first magnetic stability, and a magnetic coupling layer between the first and second sub-layers.
    Type: Application
    Filed: September 27, 2018
    Publication date: April 2, 2020
    Applicant: INTEL CORPORATION
    Inventors: Angeline Smith, Sasikanth Manipatruni, MD Tofizur Rahman, Noriyuki Sato, Tanay Gasovi, Christopher Wiegand, Ian Young