Patents by Inventor Tang-Chun Weng
Tang-Chun Weng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240122078Abstract: A semiconductor memory device includes a substrate having a conductor region thereon, an interlayer dielectric layer on the substrate, and a conductive via electrically connected to the conductor region. The conductive via has a lower portion embedded in the interlayer dielectric layer and an upper portion protruding from a top surface of the interlayer dielectric layer. The upper portion has a rounded top surface. A storage structure conformally covers the rounded top surface.Type: ApplicationFiled: December 18, 2023Publication date: April 11, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chia-Chang Hsu, Tang-Chun Weng, Cheng-Yi Lin, Yung-Shen Chen, Chia-Hung Lin
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Patent number: 11895927Abstract: A semiconductor memory device includes a substrate having a conductor region thereon, an interlayer dielectric layer on the substrate, and a conductive via electrically connected to the conductor region. The conductive via has a lower portion embedded in the interlayer dielectric layer and an upper portion protruding from a top surface of the interlayer dielectric layer. The upper portion has a rounded top surface. A storage structure conformally covers the rounded top surface.Type: GrantFiled: May 13, 2021Date of Patent: February 6, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chia-Chang Hsu, Tang-Chun Weng, Cheng-Yi Lin, Yung-Shen Chen, Chia-Hung Lin
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Publication number: 20230262993Abstract: Provided are a non-volatile memory device and a manufacturing method thereof. The non-volatile memory device includes a substrate having a memory region and a dummy region surrounding the memory region, an interconnect structure, memory cells, conductive vias and dummy vias. The interconnect structure is disposed on the substrate and in the memory region. The memory cells are disposed on the interconnect structure and arranged in an array when viewed from a top view. The memory cells include first memory cells in the memory region and second memory cells in the dummy region. The conductive vias are disposed in the memory region and between the first memory cells and the interconnection structure to electrically connect each of the first memory cells to the interconnect structure. The dummy vias are disposed in the dummy region and surround the memory region.Type: ApplicationFiled: April 20, 2023Publication date: August 17, 2023Applicant: United Microelectronics Corp.Inventors: Cheng-Yi Lin, Tang Chun Weng, Chia-Chang Hsu, Yung Shen Chen, Chia-Hung Lin
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Patent number: 11690230Abstract: Provided are a non-volatile memory device and a manufacturing method thereof. The non-volatile memory device includes a substrate having a memory region and a dummy region surrounding the memory region, an interconnect structure, memory cells, conductive vias and dummy vias. The interconnect structure is disposed on the substrate and in the memory region. The memory cells are disposed on the interconnect structure and arranged in an array when viewed from a top view. The memory cells include first memory cells in the memory region and second memory cells in the dummy region. The conductive vias are disposed in the memory region and between the first memory cells and the interconnection structure to electrically connect each of the first memory cells to the interconnect structure. The dummy vias are disposed in the dummy region and surround the memory region.Type: GrantFiled: June 11, 2021Date of Patent: June 27, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Cheng-Yi Lin, Tang Chun Weng, Chia-Chang Hsu, Yung Shen Chen, Chia-Hung Lin
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Publication number: 20220367565Abstract: Provided are a non-volatile memory device and a manufacturing method thereof. The non-volatile memory device includes a substrate having a memory region and a dummy region surrounding the memory region, an interconnect structure, memory cells, conductive vias and dummy vias. The interconnect structure is disposed on the substrate and in the memory region. The memory cells are disposed on the interconnect structure and arranged in an array when viewed from a top view. The memory cells include first memory cells in the memory region and second memory cells in the dummy region. The conductive vias are disposed in the memory region and between the first memory cells and the interconnection structure to electrically connect each of the first memory cells to the interconnect structure. The dummy vias are disposed in the dummy region and surround the memory region.Type: ApplicationFiled: June 11, 2021Publication date: November 17, 2022Applicant: United Microelectronics Corp.Inventors: Cheng-Yi Lin, Tang Chun Weng, Chia-Chang Hsu, Yung Shen Chen, Chia-Hung Lin
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Publication number: 20220344579Abstract: A semiconductor memory device includes a substrate having a conductor region thereon, an interlayer dielectric layer on the substrate, and a conductive via electrically connected to the conductor region. The conductive via has a lower portion embedded in the interlayer dielectric layer and an upper portion protruding from a top surface of the interlayer dielectric layer. The upper portion has a rounded top surface. A storage structure conformally covers the rounded top surface.Type: ApplicationFiled: May 13, 2021Publication date: October 27, 2022Inventors: Chia-Chang Hsu, Tang-Chun Weng, Cheng-Yi Lin, Yung-Shen Chen, Chia-Hung Lin
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Patent number: 10747099Abstract: The present invention provides a photomask, comprising: a substrate, a first region, a second region and a third region are defined thereon, wherein the third region is disposed between the first region and the second region, a patterned layer disposed on the substrate, wherein the patterned layer comprises a first patterned layer disposed in the first region, a second patterned layer disposed in the second region, and a third patterned layer disposed in the third region, and wherein a thickness of the first patterned layer is equal to a thickness of the second patterned layer, the thickness of the first patterned layer is different from a thickness of the third patterned layer, and at least one recess disposed in the third region.Type: GrantFiled: May 22, 2018Date of Patent: August 18, 2020Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yen-Pu Chen, Shu-Yen Liu, Tang-Chun Weng, Tuan-Yen Yu
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Publication number: 20190361339Abstract: The present invention provides a photomask, comprising: a substrate, a first region, a second region and a third region are defined thereon, wherein the third region is disposed between the first region and the second region, a patterned layer disposed on the substrate, wherein the patterned layer comprises a first patterned layer disposed in the first region, a second patterned layer disposed in the second region, and a third patterned layer disposed in the third region, and wherein a thickness of the first patterned layer is equal to a thickness of the second patterned layer, the thickness of the first patterned layer is different from a thickness of the third patterned layer, and at least one recess disposed in the third region.Type: ApplicationFiled: May 22, 2018Publication date: November 28, 2019Inventors: Yen-Pu Chen, Shu-Yen Liu, Tang-Chun Weng, Tuan-Yen Yu
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Patent number: 10395999Abstract: A method for monitoring fin removal includes providing a substrate having a first region with first fins extending along a first direction and a second region with second fins extending along a second direction, wherein the first direction is perpendicular to the second direction; forming a material layer on the substrate to cover the first fins and the second fins; identically patterning the first fins and the second fins using a first pattern and a second pattern respectively for simultaneously removing parts of the first and second fins, thereby forming first fin features in the first region and second fin features in the second region, wherein the first pattern has a first dimension along the second direction, the second pattern has a second dimension along the second direction, and the second dimension is equal to the first dimension; and monitoring the first fin features using the second fin features.Type: GrantFiled: May 16, 2018Date of Patent: August 27, 2019Assignee: UNITED MICROELECTRONICS CORP.Inventors: Cheng-Hao Yang, En-Chiuan Liou, Hsiao-Lin Hsu, Tang-Chun Weng, Chia-Ching Lin, Yen-Pu Chen
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Patent number: 10170623Abstract: A semiconductor device and a method of fabricating the same, the semiconductor device includes a plurality of fin shaped structures, a trench, a spacing layer and a dummy gate structure. The fin shaped structures are disposed on a substrate. The trench is disposed between the fin shaped structures. The spacing layer is disposed on sidewalls of the trench, wherein the spacing layer has a top surface lower than a top surface of the fin shaped structures. The dummy gate structure is disposed on the fin shaped structures and across the trench.Type: GrantFiled: October 30, 2017Date of Patent: January 1, 2019Assignee: UNITED MICROELECTRONICS CORP.Inventors: En-Chiuan Liou, Tang-Chun Weng, Chien-Hao Chen
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Publication number: 20180047848Abstract: A semiconductor device and a method of fabricating the same, the semiconductor device includes a plurality of fin shaped structures, a trench, a spacing layer and a dummy gate structure. The fin shaped structures are disposed on a substrate. The trench is disposed between the fin shaped structures. The spacing layer is disposed on sidewalls of the trench, wherein the spacing layer has a top surface lower than a top surface of the fin shaped structures. The dummy gate structure is disposed on the fin shaped structures and across the trench.Type: ApplicationFiled: October 30, 2017Publication date: February 15, 2018Inventors: En-Chiuan Liou, Tang-Chun Weng, Chien-Hao Chen
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Patent number: 9837540Abstract: A semiconductor device and a method of fabricating the same, the semiconductor device includes a plurality of fin shaped structures, a trench, a spacing layer and a dummy gate structure. The fin shaped structures are disposed on a substrate. The trench is disposed between the fin shaped structures. The spacing layer is disposed on sidewalls of the trench, wherein the spacing layer has a top surface lower than a top surface of the fin shaped structures. The dummy gate structure is disposed on the fin shaped structures and across the trench.Type: GrantFiled: August 31, 2015Date of Patent: December 5, 2017Assignee: UNITED MICROELECTRONICS CORP.Inventors: En-Chiuan Liou, Tang-Chun Weng, Chien-Hao Chen
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Patent number: 9837282Abstract: A semiconductor structure includes a semiconductor substrate with a first region and a second region defined thereon. The first region is disposed adjoining the second region in a first direction. The semiconductor substrate includes fin structures, first recessed fins, and a bump. The fin structures are disposed in the first region. Each fin structure is elongated in the first direction. The first recessed fins are disposed in the second region. Each first recessed fin is elongated in the first direction. A topmost surface of each first recessed fin is lower than a topmost surface of each fin structure. The bump is disposed in the second region and disposed between two adjacent recessed fins in the first direction. A topmost surface of the bump is higher than the topmost surface of each first recessed fin and lower than the topmost surface of each fin structure.Type: GrantFiled: August 3, 2017Date of Patent: December 5, 2017Assignee: UNITED MICROELECTRONICS CORP.Inventors: Tang-Chun Weng, Chia-Ching Lin, Yen-Pu Chen, En-Chiuan Liou
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Patent number: 9761460Abstract: A method of fabricating a semiconductor structure is provided and includes the following steps. A semiconductor substrate including fin structures is provided. Each fin structure is partly located in a first region and partly located in a second region adjoining the first region. A fin remove process is performed for removing the fin structures in the second region. A fin cut process with a fin cut mask is performed for cutting a part of the fin structures in the first region. The fin cut mask includes cut patterns and a compensation pattern. The cut patterns are located corresponding to a part of the fin structures in the first region. The compensation pattern is located corresponding to the second region of the semiconductor substrate. A fin bump is formed in the second region and corresponding to the compensation pattern after the fin cut process and the fin remove process.Type: GrantFiled: December 1, 2016Date of Patent: September 12, 2017Assignee: UNITED MICROELECTRONICS CORP.Inventors: Tang-Chun Weng, Chia-Ching Lin, Yen-Pu Chen, En-Chiuan Liou
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Publication number: 20170025540Abstract: A semiconductor device and a method of fabricating the same, the semiconductor device includes a plurality of fin shaped structures, a trench, a spacing layer and a dummy gate structure. The fin shaped structures are disposed on a substrate. The trench is disposed between the fin shaped structures. The spacing layer is disposed on sidewalls of the trench, wherein the spacing layer has a top surface lower than a top surface of the fin shaped structures. The dummy gate structure is disposed on the fin shaped structures and across the trench.Type: ApplicationFiled: August 31, 2015Publication date: January 26, 2017Inventors: En-Chiuan Liou, Tang-Chun Weng, Chien-Hao Chen