Patents by Inventor Tang-Kuei Chang
Tang-Kuei Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230317519Abstract: The present disclosure provides methods for forming conductive features in a dielectric layer without using adhesion layers or barrier layers and devices formed thereby. In some embodiments, a structure comprising a dielectric layer over a substrate, and a conductive feature disposed through the dielectric layer. The dielectric layer has a lower surface near the substrate and a top surface distal from the substrate. The conductive feature is in direct contact with the dielectric layer, and the dielectric layer comprises an implant species. A concentration of the implant species in the dielectric layer has a peak concentration proximate the top surface of the dielectric layer, and the concentration of the implant species decreases from the peak concentration in a direction towards the lower surface of the dielectric layer.Type: ApplicationFiled: June 7, 2023Publication date: October 5, 2023Inventors: Li-Chieh Wu, Tang-Kuei Chang, Kuo-Hsiu Wei, Kei-Wei Chen, Ying-Lang Wang, Su-Hao Liu, Kuo-Ju Chen, Liang-Yin Chen, Huicheng Chang, Ting-Kui Chang, Chia Hsuan Lee
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Patent number: 11710659Abstract: The present disclosure provides methods for forming conductive features in a dielectric layer without using adhesion layers or barrier layers and devices formed thereby. In some embodiments, a structure comprising a dielectric layer over a substrate, and a conductive feature disposed through the dielectric layer. The dielectric layer has a lower surface near the substrate and a top surface distal from the substrate. The conductive feature is in direct contact with the dielectric layer, and the dielectric layer comprises an implant species. A concentration of the implant species in the dielectric layer has a peak concentration proximate the top surface of the dielectric layer, and the concentration of the implant species decreases from the peak concentration in a direction towards the lower surface of the dielectric layer.Type: GrantFiled: December 27, 2021Date of Patent: July 25, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Li-Chieh Wu, Tang-Kuei Chang, Kuo-Hsiu Wei, Kei-Wei Chen, Ying-Lang Wang, Su-Hao Liu, Kuo-Ju Chen, Liang-Yin Chen, Huicheng Chang, Ting-Kui Chang, Chia Hsuan Lee
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Patent number: 11658065Abstract: A method for CMP includes following operations. A metal layer is received. A CMP slurry composition is provided in a CMP apparatus. The CMP slurry composition includes at least a first oxidizer and a second oxidizer different from each other. The first oxidizer is oxidized to form a peroxidant by the second oxidizer. A portion of the metal layer is oxidized to form a first metal oxide by the peroxidant. The first metal oxide is re-oxidized to form a second metal oxide by the second oxidizer.Type: GrantFiled: June 15, 2020Date of Patent: May 23, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Ji Cui, Fu-Ming Huang, Ting-Kui Chang, Tang-Kuei Chang, Chun-Chieh Lin, Wei-Wei Liang, Chi-Hsiang Shen, Ting-Hsun Chang, Li-Chieh Wu, Hung Yen, Chi-Jen Liu, Liang-Guang Chen, Kei-Wei Chen
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Publication number: 20230082084Abstract: A method for CMP includes following operations. A metal stack is received. The metal layer stack includes at least a first metal layer and a second metal layer, and a top surface of the first metal layer and a top surface of the second metal layer are exposed. A protecting layer is formed over the second metal layer. A portion of the first metal layer is etched. The protecting layer protects the second metal layer during the etching of the portion of the first metal layer. A top surface of the etched first metal layer is lower than a top surface of the protecting layer. The protecting layer is removed from the second metal layer.Type: ApplicationFiled: November 21, 2022Publication date: March 16, 2023Inventors: JI CUI, FU-MING HUANG, TING-KUI CHANG, TANG-KUEI CHANG, CHUN-CHIEH LIN, WEI-WEI LIANG, LIANG-GUANG CHEN, KEI-WEI CHEN, HUNG YEN, TING-HSUN CHANG, CHI-HSIANG SHEN, LI-CHIEH WU, CHI-JEN LIU
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Patent number: 11532514Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a conductive feature over a semiconductor substrate and forming a dielectric layer over the conductive feature. The method also includes forming an opening in the dielectric layer to expose the conductive feature. The method further includes forming a conductive material to overfill the opening. In addition, the method includes thinning the conductive material using a chemical mechanical polishing process. A slurry used in the chemical mechanical polishing process includes an iron-containing oxidizer that oxidizes a portion of the conductive material.Type: GrantFiled: March 19, 2021Date of Patent: December 20, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Li-Chieh Wu, Kuo-Hsiu Wei, Kei-Wei Chen, Tang-Kuei Chang, Chia Hsuan Lee, Jian-Ci Lin
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Patent number: 11508585Abstract: A method for CMP includes following operations. A dielectric structure is received. The dielectric structure includes a metal layer stack formed therein. The metal layer stack includes at least a first metal layer and a second metal layer, and the first metal layer and the second metal layer are exposed through a surface of the dielectric structure. A first composition is provided to remove a portion of the first metal layer from the surface of the dielectric structure. A second composition is provided to form a protecting layer over the second metal layer. The protecting layer is removed from the second metal layer. A CMP operation is performed to remove a portion of the second metal layer. In some embodiments, the protecting layer protects the second metal layer during the removal of the portion of the first metal layer.Type: GrantFiled: June 15, 2020Date of Patent: November 22, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Ji Cui, Fu-Ming Huang, Ting-Kui Chang, Tang-Kuei Chang, Chun-Chieh Lin, Wei-Wei Liang, Liang-Guang Chen, Kei-Wei Chen, Hung Yen, Ting-Hsun Chang, Chi-Hsiang Shen, Li-Chieh Wu, Chi-Jen Liu
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Publication number: 20220359277Abstract: The present disclosure describes a method for the planarization of ruthenium metal layers in conductive structures. The method includes forming a first conductive structure on a second conductive structure, where forming the first conductive structure includes forming openings in a dielectric layer disposed on the second conductive structure and depositing a ruthenium metal in the openings to overfill the openings. The formation of the first conductive structure includes doping the ruthenium metal and polishing the doped ruthenium metal to form the first conductive structure.Type: ApplicationFiled: July 27, 2022Publication date: November 10, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Cheng Chen, Huicheng Chang, Fu-Ming Huang, Kei-Wei Chen, Liang-Yin Chen, Tang-Kuei Chang, Yee-Chia Yeo, Wei-Wei Liang, Ji Cui
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Patent number: 11450565Abstract: The present disclosure describes a method for the planarization of ruthenium metal layers in conductive structures. The method includes forming a first conductive structure on a second conductive structure, where forming the first conductive structure includes forming openings in a dielectric layer disposed on the second conductive structure and depositing a ruthenium metal in the openings to overfill the openings. The formation of the first conductive structure includes doping the ruthenium metal and polishing the doped ruthenium metal to form the first conductive structure.Type: GrantFiled: August 19, 2020Date of Patent: September 20, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Cheng Chen, Huicheng Chang, Fu-Ming Huang, Kei-Wei Chen, Liang-Yin Chen, Tang-Kuei Chang, Yee-Chia Yeo, Wei-Wei Liang, Ji Cui
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Publication number: 20220122884Abstract: The present disclosure provides methods for forming conductive features in a dielectric layer without using adhesion layers or barrier layers and devices formed thereby. In some embodiments, a structure comprising a dielectric layer over a substrate, and a conductive feature disposed through the dielectric layer. The dielectric layer has a lower surface near the substrate and a top surface distal from the substrate. The conductive feature is in direct contact with the dielectric layer, and the dielectric layer comprises an implant species. A concentration of the implant species in the dielectric layer has a peak concentration proximate the top surface of the dielectric layer, and the concentration of the implant species decreases from the peak concentration in a direction towards the lower surface of the dielectric layer.Type: ApplicationFiled: December 27, 2021Publication date: April 21, 2022Inventors: Li-Chieh Wu, Tang-Kuei Chang, Kuo-Hsiu Wei, Kei-Wei Chen, Ying-Lang Wang, Su-Hao Liu, Kuo-Ju Chen, Liang-Yin Chen, Huicheng Chang, Ting-Kui Chang, Chia Hsuan Lee
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Patent number: 11211289Abstract: The present disclosure provides methods for forming conductive features in a dielectric layer without using adhesion layers or barrier layers and devices formed thereby. In some embodiments, a structure comprising a dielectric layer over a substrate, and a conductive feature disposed through the dielectric layer. The dielectric layer has a lower surface near the substrate and a top surface distal from the substrate. The conductive feature is in direct contact with the dielectric layer, and the dielectric layer comprises an implant species. A concentration of the implant species in the dielectric layer has a peak concentration proximate the top surface of the dielectric layer, and the concentration of the implant species decreases from the peak concentration in a direction towards the lower surface of the dielectric layer.Type: GrantFiled: August 30, 2019Date of Patent: December 28, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Li-Chieh Wu, Tang-Kuei Chang, Kuo-Hsiu Wei, Kei-Wei Chen, Ying-Lang Wang, Su-Hao Liu, Kuo-Ju Chen, Liang-Yin Chen, Huicheng Chang, Ting-Kui Chang, Chia Hsuan Lee
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Publication number: 20210391186Abstract: A method for CMP includes following operations. A dielectric structure is received. The dielectric structure includes a metal layer stack formed therein. The metal layer stack includes at least a first metal layer and a second metal layer, and the first metal layer and the second metal layer are exposed through a surface of the dielectric structure. A first composition is provided to remove a portion of the first metal layer from the surface of the dielectric structure. A second composition is provided to form a protecting layer over the second metal layer. The protecting layer is removed from the second metal layer. A CMP operation is performed to remove a portion of the second metal layer. In some embodiments, the protecting layer protects the second metal layer during the removal of the portion of the first metal layer.Type: ApplicationFiled: June 15, 2020Publication date: December 16, 2021Inventors: Ji Cui, Fu-Ming Huang, Ting-Kui Chang, Tang-Kuei Chang, Chun-Chieh Lin, Wei-Wei Liang, Liang-Guang Chen, Kei-Wei Chen, Hung Yen, Ting-Hsun Chang, Chi-Hsiang Shen, Li-Chieh Wu, Chi-Jen Liu
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Publication number: 20210391208Abstract: A method for CMP includes following operations. A metal layer is received. A CMP slurry composition is provided in a CMP apparatus. The CMP slurry composition includes at least a first oxidizer and a second oxidizer different from each other. The first oxidizer is oxidized to form a peroxidant by the second oxidizer. A portion of the metal layer is oxidized to form a first metal oxide by the peroxidant. The first metal oxide is re-oxidized to form a second metal oxide by the second oxidizer.Type: ApplicationFiled: June 15, 2020Publication date: December 16, 2021Inventors: Ji Cui, Fu-Ming Huang, Ting-Kui Chang, Tang-Kuei Chang, Chun-Chieh Lin, Wei-Wei Liang, Chi-Hsiang Shen, Ting-Hsun Chang, Li-Chieh Wu, Hung Yen, Chi-Jen Liu, Liang-Guang Chen, Kei-Wei Chen
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Publication number: 20210371702Abstract: A slurry composition, a polishing method and an integrated circuit are provided. The slurry composition includes a slurry and at least one rheology modifier. The slurry includes at least one liquid carrier, at least one abrasives and at least one oxidizer. The rheology modifier is dispensed in the slurry. The polishing method includes using the slurry composition with the rheology modifier to polish a conductive layer.Type: ApplicationFiled: January 5, 2021Publication date: December 2, 2021Inventors: JI CUI, CHI-JEN LIU, LIANG-GUANG CHEN, KEI-WEI CHEN, CHUN-WEI HSU, LI-CHIEH WU, PENG-CHUNG JANGJIAN, KAO-FENG LIAO, FU-MING HUANG, WEI-WEI LIANG, TANG-KUEI CHANG, HUI-CHI HUANG
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Publication number: 20210305092Abstract: The present disclosure describes a method for the planarization of ruthenium metal layers in conductive structures. The method includes forming a first conductive structure on a second conductive structure, where forming the first conductive structure includes forming openings in a dielectric layer disposed on the second conductive structure and depositing a ruthenium metal in the openings to overfill the openings. The formation of the first conductive structure includes doping the ruthenium metal and polishing the doped ruthenium metal to form the first conductive structure.Type: ApplicationFiled: August 19, 2020Publication date: September 30, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Cheng CHEN, Huicheng CHANG, Fu-Ming HUANG, Kei-Wei CHEN, Liang-Yin CHEN, Tang-Kuei CHANG, Yee-Chia YEO, Wei-Wei LIANG, Ji CUI
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Publication number: 20210210383Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a conductive feature over a semiconductor substrate and forming a dielectric layer over the conductive feature. The method also includes forming an opening in the dielectric layer to expose the conductive feature. The method further includes forming a conductive material to overfill the opening. In addition, the method includes thinning the conductive material using a chemical mechanical polishing process. A slurry used in the chemical mechanical polishing process includes an iron-containing oxidizer that oxidizes a portion of the conductive material.Type: ApplicationFiled: March 19, 2021Publication date: July 8, 2021Inventors: Li-Chieh Wu, Kuo-Hsiu Wei, Kei-Wei Chen, Tang-Kuei Chang, Chia Hsuan Lee, Jian-Ci Lin
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Patent number: 10957587Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a conductive feature over a semiconductor substrate and forming a dielectric layer over the conductive feature. The method also includes forming an opening in the dielectric layer to expose the conductive feature. The method further includes forming a conductive material to overfill the opening. In addition, the method includes thinning the conductive material using a chemical mechanical polishing process. A slurry used in the chemical mechanical polishing process includes an iron-containing oxidizer that oxidizes a portion of the conductive material.Type: GrantFiled: June 24, 2019Date of Patent: March 23, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Li-Chieh Wu, Kuo-Hsiu Wei, Kei-Wei Chen, Tang-Kuei Chang, Chia Hsuan Lee, Jian-Ci Lin
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Patent number: 10643892Abstract: The present disclosure provides methods for forming conductive features in a dielectric layer without using adhesion layers or barrier layers and devices formed thereby. In some embodiments, a structure comprising a dielectric layer over a substrate, and a conductive feature disposed through the dielectric layer. The dielectric layer has a lower surface near the substrate and a top surface distal from the substrate. The conductive feature is in direct contact with the dielectric layer, and the dielectric layer comprises an implant species. A concentration of the implant species in the dielectric layer has a peak concentration proximate the top surface of the dielectric layer, and the concentration of the implant species decreases from the peak concentration in a direction towards the lower surface of the dielectric layer.Type: GrantFiled: May 31, 2018Date of Patent: May 5, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Li-Chieh Wu, Tang-Kuei Chang, Kuo-Hsiu Wei, Kei-Wei Chen, Ying-Lang Wang, Su-Hao Liu, Kuo-Ju Chen, Liang-Yin Chen, Huicheng Chang, Ting-Kui Chang, Chia Hsuan Lee
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Publication number: 20200043786Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a conductive feature over a semiconductor substrate and forming a dielectric layer over the conductive feature. The method also includes forming an opening in the dielectric layer to expose the conductive feature. The method further includes forming a conductive material to overfill the opening. In addition, the method includes thinning the conductive material using a chemical mechanical polishing process. A slurry used in the chemical mechanical polishing process includes an iron-containing oxidizer that oxidizes a portion of the conductive material.Type: ApplicationFiled: June 24, 2019Publication date: February 6, 2020Inventors: Li-Chieh Wu, Kuo-Hsiu Wei, Kei-Wei Chen, Tang-Kuei Chang, Chia Hsuan Lee, Jian-Ci Lin
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Publication number: 20190385909Abstract: The present disclosure provides methods for forming conductive features in a dielectric layer without using adhesion layers or barrier layers and devices formed thereby. In some embodiments, a structure comprising a dielectric layer over a substrate, and a conductive feature disposed through the dielectric layer. The dielectric layer has a lower surface near the substrate and a top surface distal from the substrate. The conductive feature is in direct contact with the dielectric layer, and the dielectric layer comprises an implant species. A concentration of the implant species in the dielectric layer has a peak concentration proximate the top surface of the dielectric layer, and the concentration of the implant species decreases from the peak concentration in a direction towards the lower surface of the dielectric layer.Type: ApplicationFiled: August 30, 2019Publication date: December 19, 2019Inventors: Li-Chieh Wu, Tang-Kuei Chang, Kuo-Hsiu Wei, Kei-Wei Chen, Ying-Lang Wang, Su-Hao Liu, Kuo-Ju Chen, Liang-Yin Chen, Huicheng Chang, Ting-Kui Chang, Chia Hsuan Lee
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Publication number: 20190371664Abstract: The present disclosure provides methods for forming conductive features in a dielectric layer without using adhesion layers or barrier layers and devices formed thereby. In some embodiments, a structure comprising a dielectric layer over a substrate, and a conductive feature disposed through the dielectric layer. The dielectric layer has a lower surface near the substrate and a top surface distal from the substrate. The conductive feature is in direct contact with the dielectric layer, and the dielectric layer comprises an implant species. A concentration of the implant species in the dielectric layer has a peak concentration proximate the top surface of the dielectric layer, and the concentration of the implant species decreases from the peak concentration in a direction towards the lower surface of the dielectric layer.Type: ApplicationFiled: May 31, 2018Publication date: December 5, 2019Inventors: Li-Chieh Wu, Tang-Kuei Chang, Kuo-Hsiu Wei, Kei-Wei Chen, Ying-Lang Wang, Su-Hao Liu, Kuo-Ju Chen, Liang-Yin Chen, Huicheng Chang, Ting-Kui Chang, Chia Hsuan Lee