Abstract: A level shifter includes a buffer circuit, a first shift circuit, and a second shift circuit. The buffer circuit provides a first signal and a first inverted signal to the first shift circuit, such that the first shift circuit provides a second signal and a second inverted signal to the second shift circuit. The second shift circuit generates a plurality of output signals according to the second signal and the second inverted signal. The first shift circuit includes a plurality of first stacking transistors and a first voltage divider circuit. The first voltage divider circuit is electrically coupled between a first system high voltage terminal and a system low voltage terminal. The first voltage divider circuit is configured to provide a first inner bias to gate terminals of the first stacking transistors.

Abstract: Disclosed a method and a system for overlapping sliding window segmentation of an image based on an FPGA. According to the method, on-chip BRAMs storage resource cost of FPGA is determined; each on-chip BRAM in FPGA is used to cache the pixel data of each segmented sub-image in parallel; when the pixel data received by the BRAMs reaches a preset threshold or the last pixel of the segmented sub-image is written into the on-chip BRAMs, the data is written from the on-chip BRAMs to an off-chip DDR memory in a burst continuous writing mode; the repeated data generated by segmentation of horizontally overlapping sliding windows are written into the on-chip BRAMs corresponding to the current segmented sub-image and adjacent segmented sub-images thereof respectively in a synchronous and parallel manner.

Abstract: The present invention relates to an organic semiconducting compound and organic optoelectronic components using the same. The organic semiconducting compound own a novel chemical structure. By using the organic semiconducting compound to prepare organic optoelectronic compounds, environmentally friendly non-halogen solvent can be used. In addition, the photoresponsivity and detectivity are excellent in the near-infrared region.

Abstract: An organic semiconductor mixture and an organic optoelectronic device containing the same are provided. A n-type organic semiconductor compound in the organic semiconductor mixture has a novel chemical structure so that the mixture has good thermal stability and property difference during batch production is also minimized. The organic semiconductor mixture is applied to organic optoelectronic devices such as organic photovoltaic devices for providing good energy conversion efficiency while in use.

Abstract: Embodiments of this disclosure provide a method, electronic device, and storage medium for capturing. The method includes: in response to a triggering operation of capturing guidance with a target posture template, displaying the target posture template over a preview image displayed in a capturing page, and displaying capturing prompt information in the capturing page, wherein the target posture template is used to guide a subject to present a corresponding capturing posture, and the capturing prompt information comprises at least one of capturing angle prompt information or capturing distance prompt information; and in response to a capturing instruction, controlling a camera to capture the subject.

Abstract: A semiconductor mixed material comprises an electron donor, a first electron acceptor and a second electron acceptor. The first electron donor is a conjugated polymer. The energy gap of the first electron acceptor is less than 1.4 eV. At least one of the molecular stackability, ?-?*stackability, and crystallinity of the second electron acceptor is smaller than the first electron acceptor. The electron donor system is configured to be a matrix to blend the first electron acceptor and the second electron acceptor. The present invention also provides an organic electronic device including the semiconductor mixed material.

Abstract: An electronic device includes a first substrate, a second substrate, plural conductive pads, plural hole structures, plural connection pads and plural conductive structures. Hole structures penetrate through the first and second substrates, and are arranged corresponding to the conductive pads. Second ends of hole structures are located at the second substrate, and the corresponding conductive pad is exposed by one of the second ends. Connection pads enclose first ends of hole structures. Conductive structures are arranged in the hole structures and electrically connected to corresponding conductive pads and connection pads. The second diameter portion of each conductive structure penetrates through first substrate and conductive pad and is electrically connected to corresponding connection pad and conductive pad, and first diameter portion thereof penetrates through second substrate and is electrically connected to corresponding conductive pad.

Abstract: An electronic device and an electronic apparatus with a mating structure. The electronic device comprises a first substrate with a first face and a second face opposite to each other, a plural of tiles on the first face and with a second substrate and a patterned layer, a trace layer between the tiles and the first substrates and electrically connected to the patterned layer, and a connection component disposed at a second surface of the first substrate and electrically connected to the trace layer.

Abstract: An electronic device includes a first substrate and a second substrate stacked on each other, a plurality of pad groups, a plurality of channels, and a plurality of conductive members. The first substrate and the second substrate respectively have an inner surface facing to each other and an outer surface away from each other. Each pad group includes two conductive pads, which are respectively disposed at the outer surfaces of the first substrate and the second substrate and are located corresponding to each other. The channels pass through the first substrate and the second substrate, and each channel is disposed corresponding to one of the pad groups. Two ends of each channel are respectively sealed by the two conductive pads of the corresponding pad group. The conductive members are disposed in the channels, and each conductive member is electrically connected to the two conductive pads of the corresponding pad group.

Abstract: A semiconductor structure includes a dielectric layer over a substrate, a via conductor over the substrate and in the dielectric layer, and a first graphene layer disposed over the via conductor. In some embodiments, a top surface of the via conductor and a top surface of the dielectric layer are level. In some embodiments, the first graphene layer overlaps the via conductor from a top view. In some embodiments, the semiconductor structure further includes a second graphene layer under the via conductor and a third graphene layer between the dielectric layer and the via conductor. In some embodiments, the second graphene layer is between the substrate and the via conductor.

Abstract: An electronic device includes a sustaining layer, multiple substrates, multiple photoelectric units, multiple signal layers, multiple driving structures, and a constraining structure. The substrates are arranged on a contact surface of the sustaining layer. A first end edge of at least one substrate approaches a first end edge of the sustaining layer, and a first side edge of one substrate is adjacent to a second side edge of another substrate. The photoelectric units are arranged on the first or/and second surfaces of the substrates. The signal layers are arranged on the substrates and electrically connected to the photoelectric units. The driving structures are electrically connected to the substrates and disposed close to the first or second end edge of the sustaining layer. The constraining structure constrains the first or second end edge of the sustaining layer, and at least one driving structure is accommodated in the constraining structure.

Abstract: An organic semiconducting compound and an organic photoelectric component containing the same are provided. The organic semiconducting compound has a novel chemical structure to make the organic semiconducting compound have good response to the infrared light. The organic semiconducting compound can be applied to the organic photoelectric components such as organic photodetector (OPD), organic photovoltaic (OPV) cell, and organic field-effect transistor (OFET). Thus, the organic photoelectric components have better light absorption range and photoelectric response while in use.

Abstract: A method for manufacturing a semiconductor structure includes forming a first interconnect feature in a first dielectric feature, the first interconnect feature including a first conductive element exposed from the first dielectric feature; forming a first cap feature over the first conductive element, the first cap feature including a first cap element which includes a two-dimensional material; forming a second dielectric feature with a first opening that exposes the first cap element; forming a barrier layer over the second dielectric feature while exposing the first cap element from the barrier layer; removing a portion of the first cap element exposed from the barrier layer; and forming a second conductive element in the first opening.

Abstract: Disclosed are an alumina-based heterojunction material with abundant oxygen vacancies and a preparation method thereof. The heterojunction material is composed of alumina with abundant oxygen vacancies and bismuth-rich bismuth oxychloride. The method includes mixing aluminum nitrate nonahydrate, bismuth nitrate pentahydrate, an ammonium salt and urea, each in certain amount, under stirring to obtain a mixture B, placing the mixture B in a muffle furnace, heating the mixture B and continuing the stirring to gradually melt the mixture B to form an ionic liquid B; and subjecting the ionic liquid B to a spontaneous combustion reaction in the muffle furnace to obtain a product B, and cooling the product B to room temperature to obtain the alumina-based heterojunction material with abundant oxygen vacancies.

Abstract: An electronic package is provided, in which a package module and a shielding member are disposed on a carrier structure, such that the shielding member covers a top surface and side surfaces of the package module to block the radiation outward from the package module and prevent problem that other electronic components on the carrier structure cannot be transmitted signals normally due to the electromagnetic interference of the package module.

Abstract: An electronic device includes a substrate, a trace layer and a plurality of electronic components. The substrate defines a thickness less than or equal to 100 µm. The substrate further defines a plurality of transmittances, and at least one of the transmittances is greater than 20% under the condition of the wavelength of light being between 500 nm and 1300 nm. The trace layer is arranged on the substrate, and the trace layer includes a plurality of connection pads. The electronic components are arranged on the substrate. Each electronic component is provided with at least one electrode, which is arranged on a face of the electronic component facing the substrate. At least one electrode of each electronic component is eutectic bonded to one of the connection pads.

Abstract: An exemplary method includes receiving a hybrid fin device layout for a hybrid fin device that includes a gate disposed over a single-fin active region and a multi-fin active region. The single-fin active region and the multi-fin active region extend lengthwise along a first direction. The gate extends lengthwise along a second direction, the second direction is different than the first direction, and the gate has a width along the first direction. The single-fin active region and a first portion of the gate form a first fin-based device having a first electrical characteristic. The multi-fin active region and a second portion of the gate form a second fin-based device having a second electrical characteristic that is different than the first electrical characteristic. The method further includes tuning the width of the gate to reduce a difference between the first electrical characteristic and the second electrical characteristic.

Abstract: An antenna device includes a first substrate, an antenna element, a second substrate, a circuitry, and one or more conductive structures. The antenna element is arranged on one surface of the first substrate, and the second substrate is arranged on another surface of the first substrate. The conductive structure defines a through hole at least penetrating through the second substrate and a conductive member arranged in the through hole. At least some of the conductive structures are electrically connected to the antenna element and the circuitry, and the antenna elements are electrically connected to corresponding electronic elements.

Abstract: Disclosed are an alumina-based heterojunction material with abundant oxygen vacancies and a preparation method thereof. The heterojunction material is composed of alumina with abundant oxygen vacancies and bismuth-rich bismuth oxychloride. The method includes mixing aluminum nitrate nonahydrate, bismuth nitrate pentahydrate, an ammonium salt and urea, each in certain amount, under stirring to obtain a mixture B, placing the mixture B in a muffle furnace, heating the mixture B and continuing the stirring to gradually melt the mixture B to form an ionic liquid B; and subjecting the ionic liquid B to a spontaneous combustion reaction in the muffle furnace to obtain a product B, and cooling the product B to room temperature to obtain the alumina-based heterojunction material with abundant oxygen vacancies.

Abstract: An electronic device includes a supporting board, an electrical board and electronic units. The supporting board includes a circuit layer. The electrical board has a board body, through holes through the board body, an electrical layer on the board body, and primary conductive elements respectively in the through holes. The board body has opposite first and second surfaces. The through holes communicate with the first surface and the second surface. The primary conductive elements electrically connect the electrical layer to the circuit layer. The electronic units are arranged on the first surface. Each electronic unit partially overlaps with one corresponding through hole in a projection direction of the electrical board. Each electronic unit has an electronic component and a secondary conductive element electrically connecting the electronic component to the electrical layer. The secondary conductive elements and the primary conductive elements are arranged in dislocation in the projection direction.