Patents by Inventor Tang Ying

Tang Ying has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • N type impurity doping using implantation of P+ ions or As Ions
    Patent number: 6982215
    Abstract: A method for using ion implantation to implant phosphorous or arsenic impurities into shallow source/drain regions or into polysilicon electrodes used in devices having shallow source/drain electrodes. A phosphorous source having an abundance of P2+ ions is used in an ion beam system adjusted to select P2+ ions. Since each ion contains two phosphorous atoms the ion beam requires twice the beam energy and half the beam density. This provides good wafer throughput and improved source life. An arsenic source having an abundance of As2+ ions can be substituted for the solid phosphorous source resulting in a beam of As2+ ions.
    Type: Grant
    Filed: November 5, 1998
    Date of Patent: January 3, 2006
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Buan Heng Lee, Teck Hong Low, Hai Rong Wang, Tang Ying, Zadig Cherng-Ching Lam