Abstract: The present disclosure relates to a fin-type semiconductor structure which can effectively control a leakage current between a source region and a drain region and improve controllability of a gate electrode. The fin-type semiconductor structure includes a fin-type substrate provided with a lower substrate and a fin part, a source region and a drain region formed in the fin part, a gate structure formed across the fin part between the source region and the drain region, a shallow trench isolation formed at both sides of the fin part and below the gate structure, and an isolation region formed in the fin part. The isolation region can be substantially located below the source region, and/or substantially located below the drain region, and/or substantially located below the gate structure. The present disclosure also relates to a method for forming the above semiconductor structure.

Abstract: The present invention discloses a semiconductor device and a method for manufacturing the same, and the semiconductor device includes: a first area in which a plurality of device elements are stacked, wherein adjacent ones of the plurality of device elements are spaced by an interlayer insulation layer, and each of the device elements includes a corresponding gate conductor; and a second area adjacent to the first area, wherein the interlayer insulation layer and the gate conductors extend from the first area to the second area, and there are electrically conductive vias in the second area through which the gate conductors and connected with wires, wherein there are also support posts in the second area to support the interlayer insulation layer and the gate conductors.