Abstract: A method of growing an epitaxial layer on a substrate is generally provided. According to the method, the substrate is heated in a chemical vapor deposition chamber to a growth temperature in the presence of a carbon source gas, then the epitaxial layer is grown on the substrate at the growth temperature, and finally the substrate is cooled in a chemical vapor deposition chamber to at least about 80% of the growth temperature in the presence of a carbon source gas. Substrates formed from this method can have a carrier lifetime between about 0.25 ?s and about 9.9 ?s.

Abstract: An electronic device includes a silicon carbide layer having a first conductivity type and a main junction adjacent a surface of the silicon carbide layer, and a junction termination region at the surface of the silicon carbide layer adjacent the main junction. Charge in the junction termination region decreases with lateral distance from the main junction, and a maximum charge in the junction termination region may be less than about 2×1014 cm?2.

Abstract: An optically-controlled power switch for use as an electrical switch is generally provided. The device can include a wide bandgap semiconducting material defining a stack having a p-n junction, a metal mask overlying the top surface of the stack and defining at least one opening to allow light to pass through the metal mask; a first lead wire connected to the metal stack; and a second lead wire connected to the bottom surface of the stack.

Abstract: A system and method for detecting defects in semiconductor wafers in a rapid non-destructive manner. Defects in semiconductor wafers can include micropipes and screw dislocations, stress striations, planer defects, polytype inclusions, and others. When a wafer is illuminated by polarized light, the defects induce birefringence of the polarized light that can be visualized by a polariscope to detect defects in wafers. Defects can cause linearly inputted polarized light to emerge as elliptically polarized light after transmission through a wafer having defects. Placing the wafer between a set of polarizers under the cross poles condition allows for a rapid non-destructive system and method for delineating and locating defects within a semiconductor wafer.

Abstract: This invention is directed to a system and method of fabricating PN and PiN diodes by diffusing an acceptor impurity into a substrate. This invention is particularly advantageous for fabricating SiC diodes having linearly graded, deep pn junctions. One method that this invention uses to achieve its advantages is by diffusing an acceptor impurity into a substrate using a crucible, acceptor source, substrate, and furnace.

Abstract: A system and method for detecting defects in semiconductor wafers in a rapid non-destructive manner. Defects in semiconductor wafers can include micropipes and screw dislocations, stress striations, planer defects, polytype inclusions, and others. When a wafer is illuminated by polarized light, the defects induce birefringence of the polarized light that can be visualized by a polariscope to detect defects in wafers. Defects can cause linearly inputted polarized light to emerge as elliptically polarized light after transmission through a wafer having defects. Placing the wafer between a set of polarizers under the cross poles condition allows for a rapid non-destructive system and method for delineating and locating defects within a semiconductor wafer.

Abstract: A method of wetting and coating various metals, which have been mechanically polished and chemically cleaned and etched, includes plasma cleaning and etching the metal and delivering mercury or other liquid metals through the plasma to the surface of the metal to be wetted. Tungsten, molybdenum, steels and elkonite are among the metals which may be wetted with a liquid metal according to the method of this invention. Molybdenum is cleaned and etched in a solution of 2-propanol and H.sub.2 O.sub.2.