Patents by Inventor Tangsheng CHEN

Tangsheng CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Anti-tryptase antibodies, compositions thereof, and uses thereof
    Patent number: 11939396
    Abstract: The invention provides compositions including anti-tryptase antibodies and pharmaceutical compositions thereof, as well as methods of using the same.
    Type: Grant
    Filed: June 30, 2020
    Date of Patent: March 26, 2024
    Assignee: Genentech, Inc.
    Inventors: Xiaocheng Chen, Mark Dennis, Janet Jackman, James T. Koerber, Mason Lu, Henry R. Maun, Kathila Rajapaksa, Saroja Ramanujan, Tracy Staton, Lawren Wu, Tangsheng Yi
  • ALUMINUM-GALLIUM-NITRIDE COMPOUND/GALLIUM-NITRIDE HIGH-ELECTRON-MOBILITY TRANSISTOR
    Publication number: 20180182879
    Abstract: A nitride high electron mobility transistor having a strain balance of an aluminum gallium nitride insertion layer is described. The transistor sequentially includes: a substrate and a GaN buffer layer located on the substrate; an AlyGa1-yN insertion layer located on the GaN buffer layer; an AlxGa1-xN barrier layer located on the AlyGa1-yN insertion layer opposite to the GaN buffer layer; a GaN cap layer located on the AlxGa1-xN barrier layer; a “?”-shaped source electrode and drain electrode provided in recesses formed by the removal of the GaN cap layer and some thickness of the AlxGa1-xN barrier layer; and a gate electrode located between the source electrode and the drain electrode. An AlzGa1-zN insertion layer may be further included between the AlxGa1-xN barrier layer and the GaN cap layer.
    Type: Application
    Filed: December 23, 2016
    Publication date: June 28, 2018
    Applicant: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO. 55 RESEARCH INSTITUTE
    Inventors: Chunjiang REN, Tangsheng CHEN