Patents by Inventor Tania HENRY

Tania HENRY has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240093356
    Abstract: Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented ?(110) grains having a resistivity less than 10 ??-cm and thickness less than 300 ?, with no discernable ?-phase. A resulting thin ruthenium film has a resistivity less than 12 ??-cm and a thickness less than 300 ?.
    Type: Application
    Filed: November 28, 2023
    Publication date: March 21, 2024
    Inventors: Narasimhan SRINIVASAN, Tania HENRY, Frank CERIO, Paul TURNER, Vincent IP, Rutvik MEHTA
  • Publication number: 20210404051
    Abstract: Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented ?(110) grains having a resistivity less than 9 ??-cm and thickness less than 300 ?, with no discernable ?-phase. A resulting thin ruthenium film has a resistivity less than 10 ??-cm and a thickness less than 300 ?.
    Type: Application
    Filed: September 14, 2021
    Publication date: December 30, 2021
    Inventors: Narasimhan SRINIVASAN, Tania HENRY, Frank CERIO, Paul TURNER, Vincent IP, Rutvik MEHTA
  • Publication number: 20210292889
    Abstract: Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented ?(110) grains having a resistivity less than 10 ??-cm and thickness less than 300 ?, with no discernable ?-phase. A resulting thin ruthenium film has a resistivity less than 12 ??-cm and a thickness less than 300 ?.
    Type: Application
    Filed: March 10, 2021
    Publication date: September 23, 2021
    Inventors: Narasimhan SRINIVASAN, Tania HENRY, Frank CERIO, Paul TURNER, Vincent IP, Rutvik MEHTA