Patents by Inventor Tania Roy

Tania Roy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11844228
    Abstract: A leaf inspired biomimetic light trapping scheme for ultrathin flexible graphene silicon Schottky junction solar cell. An all-dielectric approach comprising of lossless silica and titania nanoparticles is used for mimicking the two essential light trapping mechanisms of a leaf: (1) focusing and waveguiding and (2) scattering. The light trapping scheme uses two optically tuned layers and does not require any nano-structuring of the active silicon substrate, thereby ensuring that the optical gain is not offset due to recombination losses.
    Type: Grant
    Filed: October 10, 2019
    Date of Patent: December 12, 2023
    Assignee: University of Central Florida Research Foundation, Inc.
    Inventors: Tania Roy, Sonali Das
  • Patent number: 11574177
    Abstract: A phototransistor device to act as an artificial photonic synapse includes a substrate and a graphene source-drain channel patterned on the substrate. A perovskite quantum dot layer is formed on the graphene source-drain channel. The perovskite quantum dot layer is methylammonium lead bromide material. A method of operating the phototransistor device as an artificial photonic synapse includes applying a first fixed voltage to a gate of the phototransistor and a second fixed voltage across the graphene source-drain channel. A presynaptic signal is applied as stimuli across the graphene source-drain channel. The presynaptic signal includes one or more pulses of light or electrical voltage. A current across the graphene source-drain channel is measured to represent a postsynaptic signal.
    Type: Grant
    Filed: September 14, 2020
    Date of Patent: February 7, 2023
    Inventors: Jayan Thomas, Tania Roy, Sonali Das, Basudev Pradhan, Jinxin Li
  • Publication number: 20210081777
    Abstract: A phototransistor device to act as an artificial photonic synapse includes a substrate and a graphene source-drain channel patterned on the substrate. A perovskite quantum dot layer is formed on the graphene source-drain channel. The perovskite quantum dot layer is methylammonium lead bromide material. A method of operating the phototransistor device as an artificial photonic synapse includes applying a first fixed voltage to a gate of the phototransistor and a second fixed voltage across the graphene source-drain channel. A presynaptic signal is applied as stimuli across the graphene source-drain channel. The presynaptic signal includes one or more pulses of light or electrical voltage. A current across the graphene source-drain channel is measured to represent a postsynaptic signal.
    Type: Application
    Filed: September 14, 2020
    Publication date: March 18, 2021
    Inventors: Jayan THOMAS, Tania ROY, Sonali DAS, Basudev PRADHAN, Jinxin LI
  • Publication number: 20200144526
    Abstract: A leaf inspired biomimetic light trapping scheme for ultrathin flexible graphene silicon Schottky junction solar cell. An all-dielectric approach comprising of lossless silica and titania nanoparticles is used for mimicking the two essential light trapping mechanisms of a leaf: (1) focusing and waveguiding and (2) scattering. The light trapping scheme uses two optically tuned layers and does not require any nano-structuring of the active silicon substrate, thereby ensuring that the optical gain is not offset due to recombination losses.
    Type: Application
    Filed: October 10, 2019
    Publication date: May 7, 2020
    Inventors: Tania Roy, Sonali Das