Abstract: Nanoparticles for use in diagnosis by photoacoustic imaging or therapy by photothermal therapy are disclosed. The nanoparticles may have a core containing a light-absorbing material and silica. The nanoparticles may contain a light-absorbing material comprising an electron accepting unit and an electron donating unit wherein the electron-donating unit is a unit of formula (IIIa-1) wherein: Y in each occurrence is independently O or S; Z in each occurrence is O, S, NR55, or C(R54)2; R51 in each occurrence is H or a substituent; R54 in each occurrence is independently a substituent; and R55 is H or a substituent.

Abstract: A material substituted with a group of formula (I): wherein: Ar1 is an aryl or heteroaryl group; Sp1 represents a first spacer group; n1 is 0 or 1; m1 is 1 if n1 is 0 and m1 is at least 1 if n1 is 1; R1 independently in each occurrence is H or a substituent, with the proviso that at least one R1 is a group R11 selected from: alkyl comprising a tertiary carbon atom directly bound to a carbon atom of the cyclobutene ring of formula (I); branched alkyl wherein a secondary or tertiary carbon atom of the branched alkyl is spaced from a carbon atom of the cyclobutene ring of formula (I) by at least one —CH2— group; and alkyl comprising a cyclic alkyl group; or with the proviso that at least two R1 groups are linked to form a ring.

Abstract: The present invention relates to a compound of general formula (I) which can transport holes in an organic optoelectronic device, and to blends and solutions comprising the compound of general formula (I): wherein X is C, Si or Ge; A is a group of formula (II) wherein Z is N, P, NH, O or S; E is C1-10 alkyl or H; W is substituted or unsubstituted C5-14 aryl or substituted or unsubstituted C6-16 alkyl; e is an integer from 1 to 4; and z is 1 or 2; B, C and D are each independently A, H, C1-C12 alkyl, C5-14 aryl or OH; and a, b, c and d are each independently an integer from 1 to 5.

Abstract: Charge Transfer Salt, Electronic Device and Method of Forming the Same A charge-transfer salt formed from a material comprising a unit of formula (I) and an n-dopant: wherein Ar1 is an arylene group; R1 is a substituent comprising at least one cyano group; n is at least 1; R2 is a substituent; and m is 0 or a positive integer. The material may be a polymer. The charge-transfer salt may be used as a layer of an organic electronic device.

Abstract: A material substituted with a group of formula (I): wherein: Ar1 is an aryl or heteroaryl group; Sp1 represents a first spacer group; n1 is 0 or 1; m1 is 1 if n1 is 0 and m1 is at least 1 if n1 is 1; R1 independently in each occurrence is H or a substituent, with the proviso that at least one R1 is a group R11 selected from: alkyl comprising a tertiary carbon atom directly bound to a carbon atom of the cyclobutene ring of formula (I); branched alkyl wherein a secondary or tertiary carbon atom of the branched alkyl is spaced from a carbon atom of the cyclobutene ring of formula (I) by at least one —CH2— group; and alkyl comprising a cyclic alkyl group; or with the proviso that at least two R1 groups are linked to form a ring.

Abstract: The present invention relates to a compound of general formula (I) which can transport holes in an organic optoelectronic device, and to blends and solutions comprising the compound of general formula (I): wherein X is C, Si or Ge; A is a group of formula (II) wherein Z is N, P, NH, O or S; E is C1-10 alkyl or H; W is substituted or unsubstituted C5-14 aryl or substituted or unsubstituted C6-16 alkyl; e is an integer from 1 to 4; and z is 1 or 2; B, C and D are each independently A, H, C1-C12 alkyl, C5-14 aryl or OH; and a, b, c and d are each independently an integer from 1 to 5.

Abstract: A polymer comprises repeat units of formula (I): wherein: R1 independently in each occurrence is a substituent, and two substituents R1 may be linked to form a ring; R2 in each occurrence independently is H or a substituent, and two substituents R2 may be linked to form a ring; R3 independently in each occurrence is a substituent; Ar1 independently in each occurrence is an aryl or heteroaryl group that may be unsubstituted or substituted with one or more substituents; x is 0, 1 or 2; y is 0, 1 or 2; and z independently in each occurrence is 0, 1 or 2. Such repeat units have a relatively deep LUMO level that may reduce the barrier to transport of electrons from the electron-transporting layer to the light-emitting layer of an organic light emitting diode having an active layer comprising such a polymer.

Abstract: A compound of formula (I) wherein M is a transition metal; L is a ligand; x is at least 1; y is 0 or a positive integer; R1 in each occurrence is independently a substituent; R2 and R3 in each occurrence is independently H or a substituent, with the proviso that at least one of R1, R2 and R3 is a group X comprising at least one aryl or heteroaryl group. The compound of formula (I) may be used as a phosphorescent material in an organic light-emitting device.

Abstract: An organic semiconducting compound comprising the structure of formula (I): where Ar1, Ar2, Ar3 and Ar4 independently comprise monocyclic aromatic rings and at least one of Ar1, Ar2, Ar3 and Ar4 is substituted with at least one substituent X, which in each occurrence may be the same or different and is selected from the group consisting of (i) optionally substituted straight, branched or cyclic alkyl chains with 1 to 20 carbon atoms, alkoxy, amino, amido, silyl or alkenyl, or (ii) a polymerizable or reactive group selected from the group consisting of halogens, boronic acids, diboronic acids and esters of boronic acids and diboronic acids, alkylene groups and stannyl groups, and where Ar1, Ar2, Ar3 and Ar4 may each optionally be fused to one or more further rings. The organic semiconducting compound is used as an active layer in an organic semiconducting device such as a thin film transistor.

Abstract: A semiconducting compound with the structure: where X1 and X2 are independently S, Se, SiR1R2, O, CR3R4, C2R5R6, N, NR7, where R1 to R7 independently comprise hydrogen, straight, branched or cyclic alkyl, akenyl or alkynyl groups, alkoxy, aryl, silyl or amino; where each of Ar1 to Ar4 is optional and independently comprises, if present, an aryl or heteroaryl group; and where Y1 to Y4 independently comprise hydrogen, reactive groups, optionally substituted straight, branched or cyclic alkyl, alkoxy, akenyl, alkynyl, amido or amino groups, optionally substituted aryl or heteroaryl where at least one of Y1 to Y4 does not comprise hydrogen; and methods and devices related thereto.

Abstract: A semiconducting compound comprising the structure: where R1 to R4 independently comprise, but are not limited to, optionally substituted straight, branched or cyclic alkyl chains having 2 to 20 (e.g. 2 to 12) carbon atoms, alkoxy, amino, amido, silyl, alkyl, alkenyl, aryl or hetero aryl; where X1 and X2 independently comprise S, O, NR5 or SiR6R7 where R8 to R7 independently comprise C1 to C5 branched, straight or cyclic alkyl chains; and where Ar1 comprises a heterocyclic ring, and where n is an integer between 1 and 4.

Abstract: A soluble oligomeric compound for forming an organic thin film transistor, has repeat units comprising two or more fused thiophene residues. The repeat units comprise the structure: The compound may include two or more terminating groups comprising solvating groups. A solution of the material can be used to form a thin film transistor by ink jet printing.

Abstract: The present invention relates to a compound of general formula (I) which can transport holes in an organic optoelectronic device, and to blends and solutions comprising the compound of general formula (I): wherein X is C, Si or Ge; A is a group of formula (II) wherein Z is N, P, NH, O or S; E is C1-10 alkyl or H; W is substituted or unsubstituted C5-14 aryl or substituted or unsubstituted C6-16 alkyl; e is an integer from 1 to 4; and z is 1 or 2; B, C and D are each independently A, H, C1-C12 alkyl, C5-14 aryl or OH; and a, b, c and d are each independently an integer from 1 to 5.

Abstract: A species for use, for example, in a charge transfer layer of a photovoltaic device, the species comprising an acceptor group to which is fused a tuning group. The species can be a small molecule, polymer or oligomer, and monomers for producing said polymer, photovoltaic devices comprising said species, and methods for producing said device, are also provided.

Abstract: A semiconducting compound with the structure: where X1 and X2 are independently S, Se, SiR1R2, O, CR3R4, C2R5R6, N, NR7, where R1 to R7 independently comprise hydrogen, straight, branched or cyclic alkyl, akenyl or alkynyl groups, alkoxy, aryl, silyl or amino; where each of Ar1 to Ar4 is optional and independently comprises, if present, an aryl or heteroaryl group; and where Y1 to Y4 independently comprise hydrogen, reactive groups, optionally substituted straight, branched or cyclic alkyl, alkoxy, akenyl, alkynyl, amido or amino groups, optionally substituted aryl or heteroaryl where at least one of Y1 to Y4 does not comprise hydrogen; and methods and devices related thereto.

Abstract: Light-emitting composition comprising a host polymer and a light emitting dopant wherein the host polymer comprises conjugating repeat units and non-conjugating repeat units in a backbone of the polymer and wherein: the conjugating repeat units provide at least one conjugation path between repeat units linked thereto; and the non-conjugating repeat units comprise an at least partially saturated ring having at least one ring atom that breaks any conjugation path between repeat units linked to the non-conjugating repeat unit such that a highest occupied molecular orbital level of the polymer is further from vacuum level by at least 0.1 eV and/or a lowest unoccupied molecular orbital level of the polymer is closer to vacuum level by at least 0.1 eV as compared to a polymer in which the non-conjugating repeat units are absent.

Abstract: A semiconducting compound comprising the structure: where R1 to R4 independently comprise, but are not limited to, optionally substituted straight, branched or cyclic alkyl chains having 2 to 20 (e.g. 2 to 12) carbon atoms, alkoxy, amino, amido, silyl, alkyl, alkenyl, aryl or hetero aryl; where X1 and X2 independently comprise S, O, NR5 or SiR6R7 where R8 to R7 independently comprise C1 to C5 branched, straight or cyclic alkyl chains; and where Ar1 comprises a heterocyclic ring, and where n is an integer between 1 and 4.

Abstract: An organic semiconducting compound comprising the structure of formula (I): where Ar1, Ar2, Ar3 and Ar4 independently comprise monocyclic aromatic rings and at least one of Ar1, Ar2, Ar3 and Ar4 is substituted with at least one substituent X, which in each occurrence may be the same or different and is selected from the group consisting of (i) optionally substituted straight, branched or cyclic alkyl chains with 1 to 20 carbon atoms, alkoxy, amino, amido, silyl or alkenyl, or (ii) a polymerisable or reactive group selected from the group consisting of halogens, boronic acids, diboronic acids and esters of boronic acids and diboronic acids, alkylene groups and stannyl groups, and where Ar1, Ar2, Ar3 and Ar4 may each optionally be fused to one or more further rings. The organic semiconducting compound is used as an active layer in an organic semiconducting device such as a thin film transistor.

Abstract: A soluble oligomeric compound for forming an organic thin film transistor, has repeat units comprising two or more fused thiophene residues. The repeat units comprise the structure: The compound may include two or more terminating groups comprising solvating groups. A solution of the material can be used to form a thin film transistor by ink jet printing.

Abstract: The invention provides a color photographic element comprising at least one light-sensitive silver halide emulsion layer or a non silver-containing light-insensitive layer, in which at least one of these layers contains a colorless imidazole compound of formula (I) that undergoes less than 10% chemical or redox reaction with oxidized developer and which enables the photographic speed of the element to be increased by at least 0.