Abstract: A magnetic iron alloy and process of making the same. The alloy includes iron, approximately 2 wt. % to approximately 8 wt. % cobalt, approximately 0.05 wt. % to approximately 5 wt. % manganese, and approximately 0.05 wt. % to approximately 5 wt. % silicon. The alloy may also include up to approximately 0.3 wt. % chromium, up to approximately 2 wt. % vanadium, up to approximately 1 wt. % nickel, up to approximately 0.05 wt. % niobium, and up to approximately 0.02 wt. % carbon.

Abstract: A magnetic iron alloy and process of making the same. The alloy includes iron, approximately 2 wt. % to approximately 8 wt. % cobalt, approximately 0.05 wt. % to approximately 5 wt. % manganese, and approximately 0.05 wt. % to approximately 5 wt. % silicon. The alloy may also include up to approximately 0.3 wt. % chromium, up to approximately 2 wt. % vanadium, up to approximately 1 wt. % nickel, up to approximately 0.05 wt. % niobium, and up to approximately 0.02 wt. % carbon.

Abstract: A magnetic iron alloy and process of making the same. The alloy includes iron, approximately 2 wt. % to approximately 10 wt. % cobalt, approximately 0.05 wt. % to approximately 5 wt. % manganese, and approximately 0.05 wt. % to approximately 5 wt. % silicon. The alloy may also include up to approximately 3 wt. % chromium, up to approximately 2 wt. % vanadium, up to approximately 1 wt. % nickel, up to approximately 0.05 wt. % niobium, and up to approximately 0.02 wt. % carbon.

Abstract: Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal compound that provides a Mohs hardness <6, and optionally iii) an oxidizing agent. The oxidizing agent can include a transition metal. The slurry is moved relative to the silicon carbide comprising surface, wherein at least a portion of the silicon carbide surface is removed.

Abstract: Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal compound that provides a Mohs hardness ?6, and optionally iii) an oxidizing agent. The oxidizing agent can include a transition metal. The slurry is moved relative to the silicon carbide comprising surface, wherein at least a portion of the silicon carbide surface is removed.

Abstract: Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal compound that provides a Mohs hardness ?6, and optionally iii) an oxidizing agent. The oxidizing agent can include a transition metal. The slurry is moved relative to the silicon carbide comprising surface, wherein at least a portion of the silicon carbide surface is removed.

Abstract: Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal compound that provides a Mohs hardness ?6, and optionally iii) an oxidizing agent. The oxidizing agent can include a transition metal. The slurry is moved relative to the silicon carbide comprising surface, wherein at least a portion of eth silicon carbide surface is removed.