Patents by Inventor Tanmoy Pramanik

Tanmoy Pramanik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetic memory devices and methods of fabrication
    Patent number: 11063088
    Abstract: A memory device includes a first electrode, a second electrode and a magnetic tunnel junction (MTJ) between the first electrode and the second electrode. The MTJ includes a fixed magnet, a free magnet and a tunnel barrier between the fixed magnet and the free magnet. The MTJ further includes a conductive layer between the free magnet and the second electrode, the conductive layer having a metallic dopant, where the metallic dopant has a concentration that increase with distance from an interface between the free magnet and the conductive layer. A capping layer is between the conductive layer and the second electrode.
    Type: Grant
    Filed: December 6, 2019
    Date of Patent: July 13, 2021
    Assignee: Intel Corporation
    Inventors: Daniel Ouellette, Christopher Wiegand, Justin Brockman, Tofizur Rahman, Oleg Golonzka, Angeline Smith, Andrew Smith, James Pellegren, Aaron Littlejohn, Juan G. Alzate-Vinasco, Yu-Jin Chen, Tanmoy Pramanik
  • MAGNETIC MEMORY DEVICES AND METHODS OF FABRICATION
    Publication number: 20210175284
    Abstract: A memory device includes a first electrode, a second electrode and a magnetic tunnel junction (MTJ) between the first electrode and the second electrode. The MTJ includes a fixed magnet, a free magnet and a tunnel barrier between the fixed magnet and the free magnet. The MTJ further includes a conductive layer between the free magnet and the second electrode, the conductive layer having a metallic dopant, where the metallic dopant has a concentration that increase with distance from an interface between the free magnet and the conductive layer. A capping layer is between the conductive layer and the second electrode.
    Type: Application
    Filed: December 6, 2019
    Publication date: June 10, 2021
    Applicant: Intel Corporation
    Inventors: Daniel Ouellette, Christopher Wiegand, Justin Brockman, Tofizur Rahman, Oleg Golonzka, Angeline Smith, Andrew Smith, James Pellegren, Aaron Littlejohn, Juan G. Alzate-Vinasco, Yu-Jin Chen, Tanmoy Pramanik