Patents by Inventor Tanya Andreeva ATANASOVA

Tanya Andreeva ATANASOVA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10712499
    Abstract: The present disclosure relates to packaging of integrated circuit chips for semiconductor devices. More particularly, the present disclosure relates to packaging of multiple chips for silicon photonics devices. The present disclosure provides a semiconductor device including a photonic integrated circuit (PIC) chip, an inductor positioned over the PIC chip, and a transimpedance amplifier (TIA) chip positioned over the PIC chip. The inductor has a first terminal end and a second terminal end, and the first terminal end is connected to the PIC chip.
    Type: Grant
    Filed: November 27, 2018
    Date of Patent: July 14, 2020
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Selaka Bandara Bulumulla, Md Sayed Kaysar Bin Rahim, Tanya Andreeva Atanasova
  • Publication number: 20200166704
    Abstract: The present disclosure relates to packaging of integrated circuit chips for semiconductor devices. More particularly, the present disclosure relates to packaging of multiple chips for silicon photonics devices. The present disclosure provides a semiconductor device including a photonic integrated circuit (PIC) chip, an inductor positioned over the PIC chip, and a transimpedance amplifier (TIA) chip positioned over the PIC chip. The inductor has a first terminal end and a second terminal end, and the first terminal end is connected to the PIC chip.
    Type: Application
    Filed: November 27, 2018
    Publication date: May 28, 2020
    Inventors: SELAKA BANDARA BULUMULLA, MD SAYED KAYSAR BIN RAHIM, TANYA ANDREEVA ATANASOVA
  • Publication number: 20160043046
    Abstract: Methods for wet etching a UBM layer and the resulting devices are disclosed. Embodiments may include patterning metal bumps on a wafer that has at least two metal layers thereon; exposing the wafer to a first acid solution to remove a portion of a first of the two metal layers exposed by the patterning of the metal bumps; and exposing the wafer to a second acid solution to remove a portion a second of the two metal layers exposed by the patterning of the metal bumps and the exposure of the wafer to the first acid solution, wherein an undercut below the metal bumps, formed by removal of the portions of the first and second metal layers, is less than 1.5 microns.
    Type: Application
    Filed: October 16, 2015
    Publication date: February 11, 2016
    Inventors: Tanya Andreeva ATANASOVA, Reiner WILLEKE, Anh Ngoc DUONG
  • Patent number: 9214436
    Abstract: Methods for wet etching a UBM layer and the resulting devices are disclosed. Embodiments may include patterning metal bumps on a wafer that has at least two metal layers thereon; exposing the wafer to a first acid solution to remove a portion of a first of the two metal layers exposed by the patterning of the metal bumps; and exposing the wafer to a second acid solution to remove a portion a second of the two metal layers exposed by the patterning of the metal bumps and the exposure of the wafer to the first acid solution, wherein an undercut below the metal bumps, formed by removal of the portions of the first and second metal layers, is less than 1.5 microns.
    Type: Grant
    Filed: February 4, 2014
    Date of Patent: December 15, 2015
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Tanya Andreeva Atanasova, Reiner Willeke, Anh Ngoc Duong
  • Publication number: 20150221605
    Abstract: Methods for wet etching a UBM layer and the resulting devices are disclosed. Embodiments may include patterning metal bumps on a wafer that has at least two metal layers thereon; exposing the wafer to a first acid solution to remove a portion of a first of the two metal layers exposed by the patterning of the metal bumps; and exposing the wafer to a second acid solution to remove a portion a second of the two metal layers exposed by the patterning of the metal bumps and the exposure of the wafer to the first acid solution, wherein an undercut below the metal bumps, formed by removal of the portions of the first and second metal layers, is less than 1.5 microns.
    Type: Application
    Filed: February 4, 2014
    Publication date: August 6, 2015
    Applicant: GLOBALFOUNDRIES Inc.
    Inventors: Tanya Andreeva ATANASOVA, Reiner WILLEKE, Anh Ngoc DUONG