Patents by Inventor Tao-Chi Chang
Tao-Chi Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12068433Abstract: A light-emitting device includes: a substrate having a top surface, wherein the top surface comprises a first portion and a second portion; a first semiconductor stack on the first portion, comprising a first upper surface and a first side wall; and a second semiconductor stack on the first upper surface, comprising a second upper surface and a second side wall, and wherein the second side wall connects the first upper surface; wherein the first semiconductor stack comprises a dislocation stop layer; wherein the dislocation stop layer comprises AlGaN; and wherein the first side wall and the second portion of the top surface form an acute angle ? between thereof.Type: GrantFiled: October 7, 2021Date of Patent: August 20, 2024Assignee: EPISTAR CORPORATIONInventors: Yen-Tai Chao, Sen-Jung Hsu, Tao-Chi Chang, Wei-Chih Wen, Ou Chen, Yu-Shou Wang, Chun-Hsiang Tu, Jing-Feng Huang
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Publication number: 20220029055Abstract: A light-emitting device includes: a substrate having a top surface, wherein the top surface comprises a first portion and a second portion; a first semiconductor stack on the first portion, comprising a first upper surface and a first side wall; and a second semiconductor stack on the first upper surface, comprising a second upper surface and a second side wall, and wherein the second side wall connects the first upper surface; wherein the first semiconductor stack comprises a dislocation stop layer; wherein the dislocation stop layer comprises AlGaN; and wherein the first side wall and the second portion of the top surface form an acute angle a between thereofType: ApplicationFiled: October 7, 2021Publication date: January 27, 2022Inventors: Yen-Tai CHAO, Sen-Jung HSU, Tao-Chi CHANG, Wei-Chih WEN, Ou CHEN, Yu-Shou WANG, Chun-Hsiang TU, Jing-Feng HUANG
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Patent number: 11158762Abstract: A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack on the first portion, including a first upper surface and a first side wall; and a second semiconductor stack on the first upper surface, including a second upper surface and a second side wall, and wherein the second side wall connects the first upper surface; wherein the first semiconductor stack includes a dislocation stop layer; and wherein the first side wall and the second portion of the top surface form an acute angle ? between thereof.Type: GrantFiled: June 9, 2020Date of Patent: October 26, 2021Assignee: EPISTAR CORPORATIONInventors: Yen-Tai Chao, Sen-Jung Hsu, Tao-Chi Chang, Wei-Chih Wen, Ou Chen, Yu-Shou Wang, Chun-Hsiang Tu, Jing-Feng Huang
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Patent number: 10790412Abstract: A manufacturing method of a light-emitting device includes steps of: providing a substrate with a top surface, wherein the top surface comprises a plurality of concavo-convex structures; forming a semiconductor stack on the top surface; forming a trench in the semiconductor stack to define a plurality of second semiconductor stacks and expose a first upper surface; forming a scribing region which extends from the first upper surface into the semiconductor stack and exposes a side surface of the semiconductor stack to define a plurality of first semiconductor stacks; removing a portion of the plurality of first semiconductor stacks and a portion of the concavo-convex structures trough the region to form a first side wall of each of the first semiconductor stack; and dividing the substrate along the region; wherein the first side wall and the top surface form an acute angle ? between thereof, 30°???80°.Type: GrantFiled: January 28, 2019Date of Patent: September 29, 2020Assignee: EPISTAR CORPORATIONInventors: Yen-Tai Chao, Sen-Jung Hsu, Tao-Chi Chang, Wei-Chih Wen, Ou Chen, Chun-Hsiang Tu, Yu-Shou Wang, Jing-Feng Huang
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Publication number: 20200303587Abstract: A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack on the first portion, including a first upper surface and a first side wall; and a second semiconductor stack on the first upper surface, including a second upper surface and a second side wall, and wherein the second side wall connects the first upper surface; wherein the first semiconductor stack includes a dislocation stop layer; and wherein the first side wall and the second portion of the top surface form an acute angle ? between thereof.Type: ApplicationFiled: June 9, 2020Publication date: September 24, 2020Inventors: Yen-Tai CHAO, Sen-Jung HSU, Tao-Chi CHANG, Wei-Chih WEN, Ou CHEN, Yu-Shou Wang, Chun-Hsiang TU, Jing-Feng Huang
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Patent number: 10714657Abstract: A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack including a first upper surface and a first side wall, wherein the first semiconductor stack is on the first portion; a second semiconductor stack including a second upper surface and a second side wall, wherein the second semiconductor stack is on the first upper surface, and wherein the second side wall is devoid of connecting the first side wall; a plurality of first concavo-convex structures on the first portion; and a plurality of second concavo-convex structures on the second portion; wherein the first side wall and the second portion of the top surface form an acute angle ? between thereof; and wherein the second concavo-convex structures have smaller size than that of the first concavo-convex structures.Type: GrantFiled: August 1, 2018Date of Patent: July 14, 2020Assignee: EPISTAR CORPORATIONInventors: Yen-Tai Chao, Sen-Jung Hsu, Tao-Chi Chang, Wei-Chih Wen, Ou Chen, Yu-Shou Wang, Chun-Hsiang Tu, Jing-Feng Huang
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Publication number: 20190157507Abstract: A manufacturing method of a light-emitting device includes steps of: providing a substrate with a top surface, wherein the top surface comprises a plurality of concavo-convex structures; forming a semiconductor stack on the top surface; forming a trench in the semiconductor stack to define a plurality of second semiconductor stacks and expose a first upper surface; forming a scribing region which extends from the first upper surface into the semiconductor stack and exposes a side surface of the semiconductor stack to define a plurality of first semiconductor stacks; removing a portion of the plurality of first semiconductor stacks and a portion of the concavo-convex structures trough the region to form a first side wall of each of the first semiconductor stack; and dividing the substrate along the region; wherein the first side wall and the top surface form an acute angle ? between thereof, 30°???80°Type: ApplicationFiled: January 28, 2019Publication date: May 23, 2019Inventors: Yen-Tai CHAO, Sen-Jung HSU, Tao-Chi CHANG, Wei-Chih WEN, Ou CHEN, Chun-Hsiang TU
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Patent number: 10236413Abstract: A light-emitting device including a substrate having a top surface, a side surface and a roughed surface between the top surface and the side surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack including a first upper surface and a first side wall, wherein the first semiconductor stack is on the second portion and exposes the first portion; a second semiconductor stack including a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface; wherein the first side wall and the first portion of the top surface form an acute angle ? between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle ? between thereof; and wherein the roughed surface is connected to the top surface.Type: GrantFiled: January 23, 2017Date of Patent: March 19, 2019Assignee: EPISTAR CORPORATIONInventors: Yen-Tai Chao, Sen-Jung Hsu, Tao-Chi Chang, Wei-Chih Wen, Ou Chen, Chun-Hsiang Tu
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Publication number: 20180374990Abstract: A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack including a first upper surface and a first side wall, wherein the first semiconductor stack is on the first portion; a second semiconductor stack including a second upper surface and a second side wall, wherein the second semiconductor stack is on the first upper surface, and wherein the second side wall is devoid of connecting the first side wall; a plurality of first concavo-convex structures on the first portion; and a plurality of second concavo-convex structures on the second portion; wherein the first side wall and the second portion of the top surface form an acute angle ? between thereof; and wherein the second concavo-convex structures have smaller size than that of the first concavo-convex structures.Type: ApplicationFiled: August 1, 2018Publication date: December 27, 2018Inventors: Yen-Tai CHAO, Sen-Jung HSU, Tao-Chi CHANG, Wei-Chih WEN, Ou CHEN, Yu-Shou Wang, Chun-Hsiang TU, Jing-Feng Huang
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Patent number: 10069037Abstract: A light-emitting device comprises a substrate having an top surface; a first semiconductor stack comprising a first upper surface and a first side wall, wherein the first semiconductor stack is on the top surface and exposes an exposing portion of the top surface; a second semiconductor stack comprising a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface; wherein the first side wall and the exposing portion of the top surface form an acute angle ? between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle ? between thereof.Type: GrantFiled: October 21, 2016Date of Patent: September 4, 2018Assignee: EPISTAR CORPORATIONInventors: Yen-Tai Chao, Sen-Jung Hsu, Tao-Chi Chang, Wei-Chih Wen, Ou Chen, Yu-Shou Wang, Chun-Hsiang Tu, Jing-Feng Huang
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Publication number: 20170179341Abstract: A manufacturing method of a light-emitting device comprising a first light semiconductor stack and a second semiconductor stack on thereof comprises steps of: providing a substrate with a top surface; forming a semiconductor stack on the substrate; forming a trench in the semiconductor stack to define multiple second semiconductor stacks and expose a first upper surface; forming a scribing region in the first upper surface to define multiple first semiconductor stacks; etching the scribing region to form a first side wall of each of the first semiconductor stack; and dividing the substrate along the scribing region to form multiple light-emitting devices, wherein the first side wall and the top surface form an acute angle ? between thereof, and 30°???80°, and a side surface of the substrate directly connects the top surface after the dividing step.Type: ApplicationFiled: January 23, 2017Publication date: June 22, 2017Inventors: Yen-Tai CHAO, Sen-Jung HSU, Tao-Chi CHANG, Wei-Chih WEN, Ou CHEN, Chun-Hsiang TU
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Publication number: 20170040491Abstract: A light-emitting device comprises a substrate having an top surface; a first semiconductor stack comprising a first upper surface and a first side wall, wherein the first semiconductor stack is on the top surface and exposes an exposing portion of the top surface; a second semiconductor stack comprising a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface; wherein the first side wall and the exposing portion of the top surface form an acute angle a between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle ? between thereof.Type: ApplicationFiled: October 21, 2016Publication date: February 9, 2017Inventors: Yen-Tai CHAO, Sen-Jung HSU, Tao-Chi CHANG, Wei-Chih WEN, Ou CHEN, Yu-Shou WANG, Chun-Hsiang TU, Jing-Feng HUANG
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Publication number: 20110272727Abstract: A light-emitting diode and method for manufacturing the same are described. The light-emitting diode comprises: a conductive substrate including a first surface and a second surface opposite to the first surface; a reflector structure comprising a conductive reflector layer bonding to the first surface of the conductive substrate and a conductive distributed Bragg reflector (DBR) structure stacked on the conductive reflector layer; an illuminant epitaxial structure disposed on the reflector structure; a first electrode disposed on a portion of the illuminant epitaxial structure; and a second electrode bonded to the second surface of the conductive substrate.Type: ApplicationFiled: July 19, 2011Publication date: November 10, 2011Applicant: Epistar CorporationInventors: Chih-Tsung Su, Chun-Lung Tseng, Ching-Wei Chiu, Tao-Chi Chang, Chan-Yang Lu, Jia-Ming Yu, Yi-Chang Yu, Yu-Chen Yang