Abstract: An EUV lithographic apparatus includes a wafer stage and a particle removing assembly for cleaning a wafer for an extreme ultraviolet (EUV) lithographic apparatus. The wafer stage includes a measurement side and an exposure side. The particle removing assembly includes particle removing electrodes, an exhaust device and turbomolecular pumps. The particle removing electrodes is configured to direct debris from the chamber by suppressing turbulence such that the debris can be exhausted from the wafer stage to the outside of the processing apparatus. In some embodiments, turbomolecular pumps are turned off in the measurement side of the wafer stage so that an exhaust flow can be guided to an exposure side of the wafer stage. In some embodiments, the speed of voltage rise to the electrodes of the wafer chuck is adjusted.

Abstract: A method comprises loading a wafer onto a wafer chuck of a lithography apparatus, projecting an extreme ultraviolet light through an opening of a frame structure of the lithography apparatus, onto the wafer, and introducing an airflow from an air curtain module on the wafer chuck toward the frame structure, wherein the air curtain module surrounds the wafer. The airflow forms an air curtain around the wafer, and shields the wafer from contaminants from the frame structure or a wafer stage.

Abstract: An EUV lithographic apparatus includes a wafer stage and a particle removing assembly for cleaning a wafer for an extreme ultraviolet (EUV) lithographic apparatus. The wafer stage includes a measurement side and an exposure side. The particle removing assembly includes particle removing electrodes, an exhaust device and turbomolecular pumps. The particle removing electrodes is configured to direct debris from the chamber by suppressing turbulence such that the debris can be exhausted from the wafer stage to the outside of the processing apparatus. In some embodiments, turbomolecular pumps are turned off in the measurement side of the wafer stage so that an exhaust flow can be guided to an exposure side of the wafer stage. In some embodiments, the speed of voltage rise to the electrodes of the wafer chuck is adjusted.

Abstract: In some embodiments, a reticle structure is provided. The reticle structure includes a reticle stage and a reticle mounted on the reticle stage. The reticle stage includes plural first burls and plural second burls, in which the second burls are disposed on a center of the reticle stage and the first burls disposed on an edge of the reticle stage such that the first burls surround the second burls. The reticle includes a base material and a pattern layer overlying the base material. The base material is secured on the first and second burls of the reticle stage. The pattern layer includes plural first gratings, and each of the first burls is vertically aligned with one of the first gratings.

Abstract: A method comprises loading a wafer onto a wafer chuck of a lithography apparatus, projecting an extreme ultraviolet light through an opening of a frame structure of the lithography apparatus, onto the wafer, and introducing an airflow from an air curtain module on the wafer chuck toward the frame structure, wherein the air curtain module surrounds the wafer. The airflow forms an air curtain around the wafer, and shields the wafer from contaminants from the frame structure or a wafer stage.

Abstract: An EUV lithographic apparatus includes a wafer stage and a particle removing assembly for cleaning a wafer for an extreme ultraviolet (EUV) lithographic apparatus. The wafer stage includes a measurement side and an exposure side. The particle removing assembly includes particle removing electrodes, an exhaust device and turbomolecular pumps. The particle removing electrodes is configured to direct debris from the chamber by suppressing turbulence such that the debris can be exhausted from the wafer stage to the outside of the processing apparatus. In some embodiments, turbomolecular pumps are turned off in the measurement side of the wafer stage so that an exhaust flow can be guided to an exposure side of the wafer stage. In some embodiments, the speed of voltage rise to the electrodes of the wafer chuck is adjusted.

Abstract: In some embodiments, a reticle structure is provided. The reticle structure includes a reticle stage and a reticle mounted on the reticle stage. The reticle stage includes plural first burls and plural second burls, in which the second burls are disposed on a center of the reticle stage and the first burls disposed on an edge of the reticle stage such that the first burls surround the second burls. The reticle includes a base material and a pattern layer overlying the base material. The base material is secured on the first and second burls of the reticle stage. The pattern layer includes plural first gratings, and each of the first burls is vertically aligned with one of the first gratings.

Abstract: A reticle stage is provided, including an electrostatic chuck and an acoustic wave transducer. The electrostatic chuck includes multiple chucking electrodes embedded in a dielectric body and configured to secure a reticle to a chuck surface of the dielectric body by electrostatic attraction. The acoustic wave transducer is disposed on the chuck surface and configured to impart a surface acoustic wave to the chuck surface to vibrate the chuck surface, thereby removing the reticle from the reticle stage.

Abstract: A reticle stage is provided, including an electrostatic chuck and an acoustic wave transducer. The electrostatic chuck includes multiple chucking electrodes embedded in a dielectric body and configured to secure a reticle to a chuck surface of the dielectric body by electrostatic attraction. The acoustic wave transducer is disposed on the chuck surface and configured to impart a surface acoustic wave to the chuck surface to vibrate the chuck surface, thereby removing the reticle from the reticle stage.