Patents by Inventor Tao Lu

Tao Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130344027
    Abstract: Multifunctional polymers are disclosed having a smart segment and a biodegradable segment. Advantageously, the biodegradable segment includes a hydrophilic segment and a hydrophobic segment. Embodiments include combining the multifunctional polymeric material with a biologically active substance in an aqueous loading environment and administering the composition as a drug delivery vehicle to a human subject.
    Type: Application
    Filed: August 27, 2013
    Publication date: December 26, 2013
    Applicant: University of Tennessee Research Foundation
    Inventors: Tao Lu Lowe, Young Shin Kim, Xiao Huang
  • Patent number: 8593638
    Abstract: Resonant sensors and molecule detection methods utilizing split frequency. Optical energy is introduced into a microcavity, such as a toroid-shaped or spherical microcavity. A portion of the optical energy is backscattered and interacts with the introduced optical energy to form first and second modes of optical energy at respective first and second frequencies, also referred to as split frequency or mode doublets. One or more molecules bind to an outer surface of the microcavity and interact with an evanescent field of optical energy resonating within the microcavity. Binding of one or more molecules to the outer surface is detected based at least in part upon a change of the split frequency relative to a baseline split frequency.
    Type: Grant
    Filed: October 2, 2009
    Date of Patent: November 26, 2013
    Assignee: California Institute of Technology
    Inventors: Tao Lu, Tsu-Te Judith Su, Kerry J. Vahala, Scott E. Fraser
  • Patent number: 8545830
    Abstract: Multifunctional polymers are disclosed having a smart segment and a biodegradable segment. Advantageously, the biodegradable segment includes a hydrophilic segment and a hydrophobic segment. Embodiments include combining the multifunctional polymeric material with a biologically active substance in an aqueous loading environment and administering the composition as a drug delivery vehicle to a human subject.
    Type: Grant
    Filed: March 24, 2004
    Date of Patent: October 1, 2013
    Assignee: University of Tennessee Research Foundation
    Inventors: Tao Lu Lowe, Young Shin Kim, Xiao Huang
  • Publication number: 20130251256
    Abstract: Disclosed is a method of compressing an image to be stored in a memory to satisfy a memory requirement. A size of a region having a uniform colour in the image is determined. The determined size of the region is compared with the candidate values of the region size threshold. A value is selected from the candidate values as the region size threshold based on the comparison between the estimated data amounts to satisfy the region size threshold and the memory requirement. The edges constituting the region which satisfy the selected value of the region size threshold are compressed losslessly.
    Type: Application
    Filed: March 14, 2013
    Publication date: September 26, 2013
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Dixon De Sheng Deng, Wen Tao Lu
  • Publication number: 20120320745
    Abstract: The disclosure discloses a method for scheduling a Guaranteed Bit Rate (GBR) service based on Quality of Service (QoS) and an apparatus implementing the method, wherein the method comprises the steps of: determining a scheduling priority of an online user according to an average rate of a GBR service of the user in a current Transmission Time Interval (TTI); and scheduling the user in accordance with the determined priority and allocating Resource Block (RB) resources to the user. With the scheduling method of the disclosure, the RB resource can be fully utilized, and the user rate which does not reach the GBR is quickly improved to make as many users as possible to reach the GBR, so as to increase the number of satisfied users in system. For the case in which a Maximum Bit Rate (MBR) is greater than the GBR, on the basis that as many users as possible are made to reach the GBR, the rates of the users can be further improved to increase the number of users with high rates.
    Type: Application
    Filed: May 20, 2010
    Publication date: December 20, 2012
    Applicant: ZTE Corporation
    Inventors: Xianwen Shi, Yong Yu, Tao Lu
  • Publication number: 20120196559
    Abstract: The disclosure provides a notification method for an Emergency Area ID, including: an evolution node B (eNB) acquires an eNB-supported Emergency Area ID and an E-UTRAN cell global identifier (E-CGI) list included in it, and when S1 is set up, carries the acquired emergency area ID and the E-CGI list included in it in an S1 setup request message to transmit to a mobility management entity (MME); the MME stores the received emergency area ID and the E-CGI list included in it. The disclosure further provides a notification system for an Emergency Area ID. With the disclosure, the complexity of manual operation and the error rate are decreased, the reliability and operating efficiency of the system are improved, and the stability and maintainability of the system are enhanced.
    Type: Application
    Filed: April 27, 2010
    Publication date: August 2, 2012
    Applicant: ZTE CORPORATION
    Inventors: Yi Zhao, Tao Lu
  • Publication number: 20120169018
    Abstract: The present invention discloses a kind of universal mounting hole means for different tool heads of electric tools, which are disposed on a mounting portion of the tool head, comprising a central hole and a plurality of long and narrow limiting holes which orient radially surrounding the central hole and disposed in distance with each other. Compared with the prior art, the present invention is applicable to various kinds of structures of the mounting seat on electrical tool and is more universal. It takes much convenience to people when changing different tool heads of electric tools, and it is benefit for storing.
    Type: Application
    Filed: December 3, 2010
    Publication date: July 5, 2012
    Applicant: NINBO GEMAY INDUSTRY CO., LTD.
    Inventors: Tao Lu, Xuefeng Xu
  • Publication number: 20100085573
    Abstract: Resonant sensors and molecule detection methods utilizing split frequency. Optical energy is introduced into a microcavity, such as a toroid-shaped or spherical microcavity. A portion of the optical energy is backscattered and interacts with the introduced optical energy to form first and second modes of optical energy at respective first and second frequencies, also referred to as split frequency or mode doublets. One or more molecules bind to an outer surface of the microcavity and interact with an evanescent field of optical energy resonating within the microcavity. Binding of one or more molecules to the outer surface is detected based at least in part upon a change of the split frequency relative to a baseline split frequency.
    Type: Application
    Filed: October 2, 2009
    Publication date: April 8, 2010
    Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY
    Inventors: Tao Lu, Tsu-Te Judith Su, Kerry J. Vahala, Scott E. Fraser
  • Publication number: 20080274456
    Abstract: The invention relates to gene regulation in ageing, and age-related cognitive decline. The invention, in particular relates to methods for screening a subject for a propensity to develop diseases associated with oxidative stress, and for age-related conditions, by examining the up-regulation and/or down-regulation of at least one gene associated within the central nervous system.
    Type: Application
    Filed: June 9, 2005
    Publication date: November 6, 2008
    Inventors: Bruce Yankner, Tao Lu
  • Publication number: 20070103991
    Abstract: A memory architecture for an integrated circuit comprises a first memory array configured to store data for one pattern of data usage and a second memory array configured to store data for another pattern of data usage. The first and second memory arrays comprise charge storage based nonvolatile memory cells having substantially the same structure in both arrays. A first operation algorithm adapted for example for data flash applications is used for programming, erasing and reading data in the first memory array. A second operation algorithm adapted for example for code flash applications is used for programming, erasing and reading data in the second memory array, wherein the second operation algorithm is different than the first operation algorithm. Thus, one die with memory for both code flash and data flash applications can be easily manufactured using a simple process, at low cost and high yield.
    Type: Application
    Filed: December 28, 2006
    Publication date: May 10, 2007
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Chih Yeh, Wen Tsai, Tao Lu, Chih Lu
  • Publication number: 20060073642
    Abstract: A method for manufacturing an electrically programmable non-volatile memory cell comprises forming a first electrode on a substrate, forming an inter-electrode layer of material on the first electrode having a property which is characterized by progressive change in response to stress, and forming a second electrode over the inter-electrode layer of material. The inter-electrode layer comprises a dielectric layer, such as ultra-thin oxide, between the first and second electrodes. A programmable resistance, or other property, is established by stressing the dielectric layer, representing stored data. Embodiments of the memory cell are adapted to store multiple bits of data per cell and/or adapted for programming more than one time without an erase process.
    Type: Application
    Filed: November 21, 2005
    Publication date: April 6, 2006
    Applicant: Macronix International Co., Ltd.
    Inventors: Chih Yeh, Han Lai, Wen Tsai, Tao Lu, Chih Lu
  • Publication number: 20060050556
    Abstract: A memory cell with a charge trapping structure is operated by measuring current between the substrate region of the memory cell and at least one of the source region of the memory cell and the drain region of the memory cell. The read operation decreases the coupling between different parts of the charge trapping structure when other parts of the charge trapping structure store data that are not of interest. The sensing window of the memory cell can be greatly improved by this read operation. The memory cell is erased by increasing the net positive charge on the memory cell and programmed by increasing the net negative charge on the memory cell.
    Type: Application
    Filed: July 28, 2005
    Publication date: March 9, 2006
    Applicant: Macronix International Co., Ltd.
    Inventors: Chih Yeh, Wen Tsai, Tao Lu
  • Publication number: 20060050565
    Abstract: A memory cell with a charge storage structure is read by measuring current between the substrate region of the memory cell and one of the current carrying nodes of the memory cell. The read operation decreases the coupling between different parts of the charge storage structure when other parts of the charge storage structure store data that are not of interest. The sensing window of the memory cell can be greatly improved by this read operation. Example arrangements are a single memory cell, a column or NOR-connected memory cells, and a virtual ground array of memory cells.
    Type: Application
    Filed: July 28, 2005
    Publication date: March 9, 2006
    Applicant: Macronix International Co., Ltd.
    Inventors: Chih Yeh, Wen Tsai, Tao Lu
  • Publication number: 20050276105
    Abstract: A NAND-type erasable programmable read only memory (EEPROM) device formed of a number of substantially identical EEPROM cells with each EEPROM cell being capable of storing two bits of information. A simple method for operating the memory comprises erasing, programming, and reading the device.
    Type: Application
    Filed: May 26, 2004
    Publication date: December 15, 2005
    Inventors: Chih Yeh, Wen Tsai, Tao Lu
  • Publication number: 20050226054
    Abstract: A memory architecture for an integrated circuit comprises a first memory array configured to store data for one pattern of data usage and a second memory array configured to store data for another pattern of data usage. The first and second memory arrays comprise charge storage based nonvolatile memory cells having substantially the same structure in both arrays. A first operation algorithm adapted for example for data flash applications is used for programming, erasing and reading data in the first memory array. A second operation algorithm adapted for example for code flash applications is used for programming, erasing and reading data in the second memory array, wherein the second operation algorithm is different than the first operation algorithm. Thus, one die with memory for both code flash and data flash applications can be easily manufactured using a simple process, at low cost and high yield.
    Type: Application
    Filed: April 1, 2004
    Publication date: October 13, 2005
    Applicant: Macronix International Co., Ltd.
    Inventors: Chih Yeh, Wen Tsai, Tao Lu, Chih Lu
  • Publication number: 20050190601
    Abstract: An electrically programmable non-volatile memory cell comprises a first electrode, a second electrode and an inter-electrode layer, such as ultra-thin oxide, between the first and second electrodes which is characterized by progressive change in resistance in response to program stress of relatively low voltages. A programmable resistance representing stored data is established by stressing the inter-electrode layer between the electrodes. Embodiments of the memory cell are adapted to store multiple bits of data per cell and/or adapted for programming more than one time without an erase process.
    Type: Application
    Filed: April 29, 2005
    Publication date: September 1, 2005
    Applicant: MACRONIX INTERNATIONAL CO. LTD
    Inventors: Chih Yeh, Han Lai, Wen Tsai, Tao Lu, Chih Lu
  • Publication number: 20050037546
    Abstract: A method for manufacturing an electrically programmable non-volatile memory cell comprises forming a first electrode on a substrate, forming an inter-electrode layer of material on the first electrode having a property which is characterized by progressive change in response to stress, and forming a second electrode over the inter-electrode layer of material. The inter-electrode layer comprises a dielectric layer, such as ultra-thin oxide, between the first and second electrodes. A programmable resistance, or other property, is established by stressing the dielectric layer, representing stored data. Embodiments of the memory cell are adapted to store multiple bits of data per cell and/or adapted for programming more than one time without an erase process.
    Type: Application
    Filed: August 15, 2003
    Publication date: February 17, 2005
    Inventors: Chih Yeh, Han Lai, Wen Tsai, Tao Lu, Chih Lu
  • Publication number: 20050036368
    Abstract: A method for programming a memory cell is based on applying stress to a memory cell, comprising a first electrode, a second electrode and an inter-electrode layer, to induce a progressive change in a property of the inter-electrode layer. The method includes a verify step including generating a signal, such as a cell current, indicating the value of the property in the selected memory cell. Then, the signal is compared with a reference signal to verify programming of the desired data. Because of the progressive nature of the change, many levels of programming can be achieved. The many levels of programming can be applied for programming a single cell more than once, without an erase process, to programming multiple bits in a single cell, and to a combination of multiple bit and multiple time of programming.
    Type: Application
    Filed: August 15, 2003
    Publication date: February 17, 2005
    Inventors: Chih Yeh, Han Lai, Wen Tsai, Tao Lu, Chih Lu
  • Publication number: 20050035429
    Abstract: An electrically programmable non-volatile memory cell comprises a first electrode, a second electrode and an inter-electrode layer, such as ultra-thin oxide, between the first and second electrodes which is characterized by progressive change in resistance in response to program stress of relatively low voltages. A programmable resistance representing stored data is established by stressing the inter-electrode layer between the electrodes. Embodiments of the memory cell are adapted to store multiple bits of data per cell and/or adapted for programming more than one time without an erase process.
    Type: Application
    Filed: August 15, 2003
    Publication date: February 17, 2005
    Inventors: Chih Yeh, Han Lai, Wen Tsai, Tao Lu, Chih Lu
  • Publication number: 20030105130
    Abstract: The present invention has identified thiaprophyrin, selenaporphyrin, and carotenoid porphyrin compounds that bind the G-quadruplex formed by the folding of single-stranded human telomeric DNA. These compounds have been shown to be effective telomerase and c-myc inhibitors and are contemplated to be useful in developing cancer treatments.
    Type: Application
    Filed: March 28, 2002
    Publication date: June 5, 2003
    Inventors: Laurence H. Hurley, Tao Lu