Abstract: Embodiments of EUV photomasks and methods for forming a EUV photomask are provided. The method comprises providing a substrate, a reflective layer, a capping layer, a hard mask layer, and forming an opening therein. An absorber layer is then filled in the opening and over the top surface of the hard mask layer. A planarized process is provided to remove the absorber layer above the top surface of the hard mask layer and form an absorber in the opening, wherein the absorber has a top portion wider than a bottom portion.

Abstract: A photolithographic technique includes receiving a mask having a printing feature region, a sub-resolution assist feature (SRAF) region, and a third region. Each region has a different thickness of an absorptive layer disposed therein. The technique also includes exposing the mask to radiation, such that an intensity of radiation reflected by the SRAF region is substantially between an intensity of radiation reflected by the printing feature region and an intensity of radiation reflected by the third region. Using the radiation reflected by the printing feature region, the radiation reflected by the SRAF region, and the radiation reflected by the third region a workpiece is exposed.

Abstract: Embodiments of EUV photomasks and methods for forming a EUV photomask are provided. The method comprises providing a substrate, a reflective layer, a capping layer, a hard mask layer, and forming an opening therein. An absorber layer is then filled in the opening and over the top surface of the hard mask layer. A planarized process is provided to remove the absorber layer above the top surface of the hard mask layer and form an absorber in the opening, wherein the absorber has a top portion wider than a bottom portion.

Abstract: A photolithographic technique includes receiving a mask having a printing feature region, a sub-resolution assist feature (SRAF) region, and a third region. Each region has a different thickness of an absorptive layer disposed therein. The technique also includes exposing the mask to radiation, such that an intensity of radiation reflected by the SRAF region is substantially between an intensity of radiation reflected by the printing feature region and an intensity of radiation reflected by the third region. Using the radiation reflected by the printing feature region, the radiation reflected by the SRAF region, and the radiation reflected by the third region a workpiece is exposed.

Abstract: Embodiments of EUV photomasks and methods for forming a EUV photomask are provided. The method comprises providing a substrate, a reflective layer, a capping layer, a hard mask layer, and forming an opening therein. An absorber layer is then filled in the opening and over the top surface of the hard mask layer. A planarized process is provided to remove the absorber layer above the top surface of the hard mask layer and form an absorber in the opening, wherein the absorber has a top portion wider than a bottom portion.

Abstract: A photomask having a partial-thickness assist feature and a technique for manufacturing the photomask are disclosed. In an exemplary embodiment, the photomask includes a mask substrate, a reflective structure disposed on the mask substrate, and an absorptive layer formed on the reflective structure. A printing feature region and an assist feature region are defined on the mask. The absorptive layer has a first thickness in the printing feature region and a second thickness in the assist feature region that is different from the first thickness. In some such embodiments, the second thickness is configured such that radiation reflected by the assist feature region does not exceed an exposure threshold of a photoresist of a target.

Abstract: A photomask having a partial-thickness assist feature and a technique for manufacturing the photomask are disclosed. In an exemplary embodiment, the photomask includes a mask substrate, a reflective structure disposed on the mask substrate, and an absorptive layer formed on the reflective structure. A printing feature region and an assist feature region are defined on the mask. The absorptive layer has a first thickness in the printing feature region and a second thickness in the assist feature region that is different from the first thickness. In some such embodiments, the second thickness is configured such that radiation reflected by the assist feature region does not exceed an exposure threshold of a photoresist of a target.

Abstract: Embodiments of EUV photomasks and methods for forming a EUV photomask are provided. The method comprises providing a substrate, a reflective layer, a capping layer, a hard mask layer, and forming an opening therein. An absorber layer is then filled in the opening and over the top surface of the hard mask layer. A planarized process is provided to remove the absorber layer above the top surface of the hard mask layer and form an absorber in the opening, wherein the absorber has a top portion wider than a bottom portion.

Abstract: A method and a biomarker for detecting of acute kidney injury is provided, wherein the method of the present comprises the following steps: detecting a soluble form of hemojuvelin in a sample obtained from a subject, wherein when the soluble form of hemojuvelin is present in the sample, the subject is identified as having acute kidney injury.