Abstract: The present application relates to the technical field of directional drill rod assembly, and discloses methods for mounting and testing a central communication cable assembly of a directional drill rod, the mounting method including: according to drawing requirements, mounting an O-shaped sealing member in a sealing groove of an insulating male connector, an insulating female connector, a communication cable direct connector and a communication cable tapered connector, and processing, connecting, and mounting the various components. By means of the method, the central communication cable assembly of a directional drill rod is mounted, and the product quality stability is good.

Abstract: Disclosed are devices, systems, and methods for a rope guide, and in particular, a magnetic-attraction rope-guide protective shell and a rope guide assembly. In some embodiments, a magnetic-attraction rope-guide protective shell includes a shell body and a magnetic attraction member; and the shell body has an inner cavity for accommodating a rope guide, and the magnetic attraction member is arranged on the shell body and is configured to fix the shell body separated from the rope guide.

Abstract: Disclosed are devices, systems, and methods for a rope guide and, in particular, a plug-in rope guide protective shell. In some embodiments, a plug-in rope guide protective shell includes a shell body and a plug-in member. The shell body has an inner cavity for accommodating a rope guide, and the rope guide has a guide opening penetrating through the rope guide along a first direction. The plug-in member is connected with the shell body and located in the inner cavity of the shell body. The plug-in member can be inserted into the guide opening.

Abstract: A large-area, uniform, and continuous films of bi-layer transition metal dichalcogenide (TMDC) and preparation method comprises that the bi-layer TMDC continuous films are grown on a substrate through the merging of bi-layer domains; the top and bottom layers of the bi-layer domains have equal size and grow synchronously, which guarantees uniformity of the bi-layer films; the bi-layer domains were nucleated at the surface steps of the substrate which require a height no less than 0.8 nm; the bi-layer TMDCs films include molybdenum disulfide, tungsten disulfide, molybdenum diselenide, and tungsten diselenide, and the size of the bi-layer TMDC films reaches centimeter-level and above, limited only by the substrate size.

Abstract: The present invention discloses a method for preparing large-area transition metal dichalcogenide (TMDC) single-crystal films and the products obtained therefrom. The method comprises the steps of: (1) providing a single-crystal C-plane sapphire with surface steps along <1010> directions; and (2) taking the sapphire in step (1) as the substrate, generating unidirectionally arranged TMDC domains on the sapphire surface based on a vapor deposition method and keeping the domains continuously grow and merge into a large-area single-crystal film. The lateral size of the TMDC single-crystal films prepared by the method can reach inch level or above, and is limited only by the size of the substrate.

Abstract: The present invention discloses a method for preparing large-area transition metal dichalcogenide (TMDC) single-crystal films and the products obtained therefrom. The method comprises the steps of: (1) providing a single-crystal C-plane sapphire with surface steps along <1010>directions; and (2) taking the sapphire in step (1) as the substrate, generating unidirectionally arranged TMDC domains on the sapphire surface based on a vapor deposition method and keeping the domains continuously grow and merge into a large-area single-crystal film. The lateral size of the TMDC single-crystal films prepared by the method can reach inch level or above, and is limited only by the size of the substrate.

Abstract: The present disclosure discloses a boron nitride nanomaterial, and preparation method and use thereof. The preparation method comprises: heating a precursor in a nitrogen atmosphere to a high temperature, to prepare the boron nitride nanomaterial. The precursor comprises boron, and at least one metal element, and/or at least one non-metallic element rather than boron, the metal element is at least one selected from the group consisting of lithium, beryllium, magnesium, calcium, strontium, barium, aluminum, gallium, indium, zinc, and titanium, and the non-metallic element comprises silicon. The preparation method of the boron nitride nanomaterial provided by the disclosure is simple, controllable, and economical with readily available and inexpensive starting materials, and high conversion rates of the starting materials, and facilitates mass production.