Abstract: The present invention relates to a high-strength, high-corrosion resistance ternary magnesium alloy and a preparation method therefor, the magnesium alloy comprising the following element components by mass percentage: 8-12 wt % of Y, 0.6-3 wt % of Al and the remainder being Mg. The method comprises: (1) under a protective atmosphere, preparing a Mg—Y intermediate alloy, an aluminum ingot and a magnesium ingot into a magnesium alloy melt; (2) under a protective atmosphere, allowing the magnesium alloy melt to stand after stirring, then carrying out refining, degassing, and slag removal, allowing the magnesium alloy melt to stand again, then thermally insulating to obtain a magnesium alloy liquid; and (3) casting and molding the magnesium alloy liquid under a protective atmosphere, and forming a cast ingot; the three steps above ultimately obtain a high-strength, high-corrosion resistance ternary magnesium alloy.

Abstract: The present invention provides a detection method for sensitive parts of ionization damage in a bipolar transistor, which includes the following steps: selecting an irradiation source, and carrying out irradiation test on the bipolar transistor to be tested; installing the irradiated bipolar transistor on a test bench of a deep level transient spectroscopy system, and setting test parameters; selecting at least two different bias voltages, and testing the bipolar transistor to obtain a deep level transient spectrum; determining whether a defect is an ionization defect according to a peak position of the defect signal in the deep level transient spectrum; determining the defect type as oxidation trapped charges or an interface state according to the level of the defect signal in the deep level transient spectrum; and determining the sensitive area of ionization damage in the bipolar transistor according to the determination result of the defect signal type.

Abstract: A key structure includes a keycap, a connecting member, a fixing member, a light emitter and a light receiver. The connecting member is connected to an inner top surface of the keycap and extends downwards, and the connecting member has a first opening through the connecting member. The fixing member has a second opening through the fixing member, in which when the keycap is initially pressed and then continues to be pressed, the keycap moves in a direction, and the connecting member moves with the keycap, and an overlapping region defined by the first opening and the second opening gradually becomes larger or smaller. The light emitter is laterally adjacent to the second opening of the fixing member. The light receiver is laterally adjacent to the first opening of the connecting member.

Abstract: An input device is provided, which includes a circuit board, a Hall sensor and an input module. The circuit board has a processor and a connector electrically connected to the processor, in which the connector has a plurality of connection terminals. The Hall sensor is disposed on the circuit board. The input module is configured to be assembled on or removed from the circuit board. The input module has a connecting portion, in which when the input module is assembled on the circuit board, the connecting portion touches one group of the connection terminals, and a set of signals is outputted to the processor for the processor to identify the input module. A mouse including the above-mentioned input device is also provided.

Abstract: The present invention relates to a high-strength, high-corrosion resistance ternary magnesium alloy and a preparation method therefor, the magnesium alloy comprising the following element components by mass percentage: 8-12 wt % of Y, 0.6-3 wt % of Al and the remainder being Mg. The method comprises: (1) under a protective atmosphere, preparing a Mg—Y intermediate alloy, an aluminum ingot and a magnesium ingot into a magnesium alloy melt; (2) under a protective atmosphere, allowing the magnesium alloy melt to stand after stirring, then carrying out refining, degassing, and slag removal, allowing the magnesium alloy melt to stand again, then thermally insulating to obtain a magnesium alloy liquid; and (3) casting and molding the magnesium alloy liquid under a protective atmosphere, and forming a cast ingot; the three steps above ultimately obtain a high-strength, high-corrosion resistance ternary magnesium alloy.

Abstract: The present invention provides a detection method for sensitive parts of ionization damage in a bipolar transistor, which includes the following steps: selecting an irradiation source, and carrying out irradiation test on the bipolar transistor to be tested; installing the irradiated bipolar transistor on a test bench of a deep level transient spectroscopy system, and setting test parameters; selecting at least two different bias voltages, and testing the bipolar transistor to obtain a deep level transient spectrum; determining whether a defect is an ionization defect according to a peak position of the defect signal in the deep level transient spectrum; determining the defect type as oxidation trapped charges or an interface state according to the level of the defect signal in the deep level transient spectrum; and determining the sensitive area of ionization damage in the bipolar transistor according to the determination result of the defect signal type.

Abstract: The present invention provides a detection method for radiation-induced defects of an oxide layer in electronic devices. The detection method includes the following steps: selecting a semiconductor material to be prepared into a substrate; preparing a back electrode on an upper surface of the substrate; growing an oxide layer on the back electrode; etching one side of the oxide layer, and exposing an etched part out of the back electrode; preparing a front electrode on an upper surface of the oxide layer; forming a plurality of grooves in the front electrode, and distributing the plurality of grooves in a grid shape to prepare a test sample; and performing a radiation test on the test sample, and detecting radiation-induced defects. By using the detection method provided by the present invention, rapid identification and detection of electrons and holes are achieved.

Abstract: The precharge circuit includes circuitry for initiating charging of a precharge pulse at a first edge of a first clock-like signal. The precharge circuit also includes circuitry for ending the charging of the precharge pulse after a time period that is longer of a preset delay period and a time period designated by a second edge of the second clock-like signal.

Abstract: A precharge circuit capable of generating a precharge pulse is provided. The precharge circuit includes circuitry for initiating charging of a precharge pulse at a first edge of a first clock-like signal. The precharge circuit also includes circuitry for ending the charging of the precharge pulse after a time period that is longer of a preset delay period and a time period designated by a second edge of the second clock-like signal. Methods for generating a precharge pulse are also included.

Abstract: A system for minimizing the effect of clock skew in a precharge circuit includes a switch coupled between an input to the precharge circuit and a global bitline; and a control circuit coupled to a precharge component and the switch. The control circuit determines whether the switch and the precharge component are activated and the control circuit receives feedback from the switch. A method of minimizing the effect of clock skew in a precharge circuit includes controlling whether an input signal outputting a first signal and a second signal from the precharge circuit; controlling the outputting of the second signal from the precharge circuit based on a clock signal, a select signal, and a dynamic signal.

Abstract: A system for minimizing the effect of clock skew in a bit line write driver includes a first control circuit coupled to the bit line write driver; and a second control circuit coupled to the bit line write driver. The bit line write driver outputs a first output signal and a second output signal. A method of minimizing the effect of clock skew in a bit line write driver includes outputting a first signal and a second signal from the bit line write driver; controlling the outputting of the second signal from the bit line write driver based on a feedback of the first signal; and controlling the outputting of the first signal from the bit line write driver based on feedback of the second signal.

Abstract: A system for minimizing the effect of clock skew in a bit line write driver includes a first control circuit coupled to the bit line write driver; and a second control circuit coupled to the bit line write driver. The bit line write driver outputs a first output signal and a second output signal. The first control circuit receives feedback from the second output signal and controls whether the bit line write driver outputs the first output signal based on the feedback from the second output signal and the second control circuit receives feedback from the first output signal and controls whether the bit line write driver outputs the second output signal based on the feedback from the first output signal.