Abstract: The present disclosure provides a composition comprising a compound of formula (I) or a physiologically acceptable salt thereof, in which the compound of formula (I) or a physiologically acceptable salt thereof has a HPLC purity of ?90%; wherein R1, R2, X and n are as defined herein. The present disclosure further provides use of the composition according to the present disclosure for preparing and/or purifying a composition comprising a salt of the compound of formula (I), and a method for treating a disease caused by a Coronavirus which comprises administering the composition of the present disclosure to a subject. The composition of the present disclosure comprises the compound of formula (I) with high purity, and has good fluidity and anti-caking property; moreover, the claimed composition comprising the compound of formula (I)) with high purity is more suitable for preparing a composition comprising a salt of the compound of formula (I) with higher purity.

Abstract: The present invention relates to application of gossypol and its optical isomers to preparation of an anti-Coronavirus drug. Specifically disclosed is application of pharmaceutically acceptable salts, solvates, isotopes, stereoisomers, stereoisomer mixtures, and tautomers of the gossypol and its optical isomers to preparation of a drug for preventing and/or treating a disease caused by a Coronavirus. The Coronavirus is MERS-CoV, SARS-CoV, or SARS-CoV-2. It is found in the present invention for the first time that the gossypol and its optical isomers can inhibit the activity of Coronavirus 3CL proteases to achieve an anti-Coronavirus effect. The half maximal inhibitory concentrations of gossypol and (?)-gossypol to SARS-CoV proteases and SARS-CoV-2 3CL proteases are all lower than 10 ?M. The anti-Coronavirus 3CL protease effect is good. Therefore, the gossypol and its optical isomers have the potential for use in the preparation of a drug for preventing and/or treating novel Coronavirus infections.

Abstract: A large-area, uniform, and continuous films of bi-layer transition metal dichalcogenide (TMDC) and preparation method comprises that the bi-layer TMDC continuous films are grown on a substrate through the merging of bi-layer domains; the top and bottom layers of the bi-layer domains have equal size and grow synchronously, which guarantees uniformity of the bi-layer films; the bi-layer domains were nucleated at the surface steps of the substrate which require a height no less than 0.8 nm; the bi-layer TMDCs films include molybdenum disulfide, tungsten disulfide, molybdenum diselenide, and tungsten diselenide, and the size of the bi-layer TMDC films reaches centimeter-level and above, limited only by the substrate size.

Abstract: The present invention discloses a method for preparing large-area transition metal dichalcogenide (TMDC) single-crystal films and the products obtained therefrom. The method comprises the steps of: (1) providing a single-crystal C-plane sapphire with surface steps along <1010> directions; and (2) taking the sapphire in step (1) as the substrate, generating unidirectionally arranged TMDC domains on the sapphire surface based on a vapor deposition method and keeping the domains continuously grow and merge into a large-area single-crystal film. The lateral size of the TMDC single-crystal films prepared by the method can reach inch level or above, and is limited only by the size of the substrate.

Abstract: The present invention discloses a method for preparing large-area transition metal dichalcogenide (TMDC) single-crystal films and the products obtained therefrom. The method comprises the steps of: (1) providing a single-crystal C-plane sapphire with surface steps along <1010>directions; and (2) taking the sapphire in step (1) as the substrate, generating unidirectionally arranged TMDC domains on the sapphire surface based on a vapor deposition method and keeping the domains continuously grow and merge into a large-area single-crystal film. The lateral size of the TMDC single-crystal films prepared by the method can reach inch level or above, and is limited only by the size of the substrate.

Abstract: The present disclosure discloses a boron nitride nanomaterial, and preparation method and use thereof. The preparation method comprises: heating a precursor in a nitrogen atmosphere to a high temperature, to prepare the boron nitride nanomaterial. The precursor comprises boron, and at least one metal element, and/or at least one non-metallic element rather than boron, the metal element is at least one selected from the group consisting of lithium, beryllium, magnesium, calcium, strontium, barium, aluminum, gallium, indium, zinc, and titanium, and the non-metallic element comprises silicon. The preparation method of the boron nitride nanomaterial provided by the disclosure is simple, controllable, and economical with readily available and inexpensive starting materials, and high conversion rates of the starting materials, and facilitates mass production.