Patents by Inventor Taoyan YAN

Taoyan YAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250022749
    Abstract: The disclosed semiconductor structure includes a conductive layer, a channel in the conductive layer. The inner wall of the channel is covered with a first dielectric layer. The thickness of the first dielectric layer is greater at the orifice of the channel than the thickness on the side away from the orifice; the first dielectric layer on the side close the orifice is covered with a second dielectric layer, and the second dielectric layer blocks the orifice; an air gap is formed in the first dielectric layer and the second dielectric layer, and the size of the air gap on the side away from the orifice is larger than the size of the air gap on the side close to the orifice. The present application can effectively reduce the parasitic capacitance of the conductive connection structure, alleviate its RC delay problem, and optimize the storage performance of the memory.
    Type: Application
    Filed: July 21, 2022
    Publication date: January 16, 2025
    Inventors: Jun WEI, Dong YAN, Taoyan YAN, Donghe BAI
  • Patent number: 12074062
    Abstract: Some examples of this disclosure relate to the field of the semiconductor technology, and disclose a method for manufacturing a semiconductor structure. The method for manufacturing of the semiconductor structure includes: providing a base, wherein the base includes a metal layer and an oxide located in the metal layer or on a surface of the metal layer; and performing heat treatment on the base, wherein a reducing gas is introduced during the heat treatment, and the metal layer is converted into a metal compound layer after the heat treatment. This disclosure can improve the performance of the semiconductor structure.
    Type: Grant
    Filed: July 13, 2021
    Date of Patent: August 27, 2024
    Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventor: Taoyan Yan
  • Patent number: 11815312
    Abstract: A rapid thermal processing method and a rapid thermal processing device are provided. The rapid thermal processing method includes the following operations. A wafer is provided. A first heating operation is performed on the wafer to heat the wafer to a first temperature. The wafer is controlled to start rotating. The first temperature is maintained for a first predetermined time. A second heating operation is performed on the wafer to heat the wafer from the first temperature to a second temperature, and the second temperature is maintained for a second predetermined time. A third heating operation is performed on the wafer to heat the wafer from the second temperature to a third temperature, and the third temperature is maintained for a third predetermined time.
    Type: Grant
    Filed: May 31, 2022
    Date of Patent: November 14, 2023
    Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventors: Wei Li, Taoyan Yan
  • Publication number: 20230307308
    Abstract: Embodiments of the present disclosure relate to the field of semiconductors, and provide a semiconductor structure and a forming method thereof. The forming method includes: providing a substrate; performing first oxidation on a part of the substrate to form a first dielectric layer; and performing second oxidation on a part of the substrate just under the first dielectric layer to form a second dielectric layer, where the first dielectric layer and the second dielectric layer form a dielectric layer on the substrate; and an oxidation rate of the first oxidation to a substrate material is less than that of the second oxidation to the substrate material.
    Type: Application
    Filed: June 13, 2022
    Publication date: September 28, 2023
    Inventors: Qing LUO, Taoyan YAN
  • Publication number: 20230235960
    Abstract: A rapid thermal processing method and a rapid thermal processing device are provided. The rapid thermal processing method includes the following operations. A wafer is provided. A first heating operation is performed on the wafer to heat the wafer to a first temperature. The wafer is controlled to start rotating. The first temperature is maintained for a first predetermined time. A second heating operation is performed on the wafer to heat the wafer from the first temperature to a second temperature, and the second temperature is maintained for a second predetermined time. A third heating operation is performed on the wafer to heat the wafer from the second temperature to a third temperature, and the third temperature is maintained for a third predetermined time.
    Type: Application
    Filed: May 31, 2022
    Publication date: July 27, 2023
    Inventors: Wei LI, Taoyan Yan
  • Publication number: 20210343534
    Abstract: Some examples of this disclosure relate to the field of the semiconductor technology, and disclose a method for manufacturing a semiconductor structure. The method for manufacturing of the semiconductor structure includes: providing a base, wherein the base includes a metal layer and an oxide located in the metal layer or on a surface of the metal layer; and performing heat treatment on the base, wherein a reducing gas is introduced during the heat treatment, and the metal layer is converted into a metal compound layer after the heat treatment. This disclosure can improve the performance of the semiconductor structure.
    Type: Application
    Filed: July 13, 2021
    Publication date: November 4, 2021
    Inventor: Taoyan YAN