Patents by Inventor Tapas Jain

Tapas Jain has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • POLISHING HEAD ASSEMBLIES FOR POLISHING SEMICONDUCTOR WAFERS
    Publication number: 20260014669
    Abstract: Polishing head assemblies for single side polishing of silicon wafers. The polishing head assemblies may include a template having a step at the edge of the template and/or a template support disposed between the template and the floor of the cap of the polishing head assembly. Some polishing head assemblies may include a cap having a thinner floor.
    Type: Application
    Filed: July 2, 2025
    Publication date: January 15, 2026
    Inventors: Tapas Jain, Sumeet S. Bhagavat, Peter D. Albrecht
  • Process for preparing ingot having reduced distortion at late body length
    Patent number: 11959189
    Abstract: A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.
    Type: Grant
    Filed: April 3, 2020
    Date of Patent: April 16, 2024
    Assignee: GlobalWafers Co., Ltd.
    Inventors: Tapas Jain, Sumeet S. Bhagavat, Zheng Lu, Feng-Chien Tsai, Hong-Huei Huang
  • PROCESS FOR PREPARING INGOT HAVING REDUCED DISTORTION AT LATE BODY LENGTH
    Publication number: 20220220631
    Abstract: A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.
    Type: Application
    Filed: April 3, 2020
    Publication date: July 14, 2022
    Inventors: Tapas Jain, Sumeet S. Bhagavat, Zheng Lu, Feng-Chien Tsai, Hong-Huei Huang
  • PROCESS FOR PREPARING INGOT HAVING REDUCED DISTORTION AT LATE BODY LENGTH
    Publication number: 20210269936
    Abstract: A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.
    Type: Application
    Filed: April 3, 2020
    Publication date: September 2, 2021
    Inventors: Tapas Jain, Sumeet S. Bhagavat, Zheng Lu, Feng-Chien Tsai, Hong-Huei Huang
  • PROCESS FOR PREPARING INGOT HAVING REDUCED DISTORTION AT LATE BODY LENGTH
    Publication number: 20200325594
    Abstract: A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.
    Type: Application
    Filed: April 3, 2020
    Publication date: October 15, 2020
    Inventors: Tapas Jain, Sumeet S. Bhagavat, Zheng Lu, Feng-Chien Tsai, Hong-Huei Huang